公开(公告)号：US10566498B2

公开(公告)日：2020-02-18

申请号：US16043981

申请日：2018-07-24

申请人： EPISTAR CORPORATION

发明人： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC分类号： H01L33/22 ,  H01L33/38 ,  H01L33/02 ,  H01L33/24 ,  H01L33/10 ,  H01L33/30 ,  H01L33/26 ,  H01L33/42 ,  H01L33/14 ,  H01L33/20 ,  H01L33/40

摘要： A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US09472719B2

公开(公告)日：2016-10-18

申请号：US14625156

申请日：2015-02-18

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/42

CPC分类号： H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

摘要： A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

摘要翻译： 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

公开(公告)号：US20160240731A1

公开(公告)日：2016-08-18

申请号：US14625156

申请日：2015-02-18

申请人： EPISTAR CORPORATION

发明人： Yu-Ren Peng ,  Tzu-Chieh Hsu ,  Shih-I Chen ,  Rong-Ren Lee ,  Hsin-Chan Chung ,  Wen-Luh Liao ,  Yi-Chieh Lin

IPC分类号： H01L33/10 ,  H01L33/42 ,  H01L33/12

CPC分类号： H01L33/105 ,  H01L33/10 ,  H01L33/12 ,  H01L33/30 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46

摘要： A light-emitting diode, comprises an active layer for emitting a light with a phase and a peak wavelength λ in air, a reflector, a lower semiconductor stack between the active layer and the reflector, wherein the lower semiconductor stack comprises multiple semiconductor layers, and each of the multiple semiconductor layers has a refractive index ni, a thickness di and two sides each contacting adjacent layers to form two interfaces, wherein each interface has a phase shift when the light passes through the interface.

摘要翻译： 发光二极管包括用于在空气中发射具有相位和峰值波长λ的光的有源层，反射器，有源层和反射器之间的下半导体叠层，其中下半导体堆叠包括多个半导体层， 并且多个半导体层中的每一个具有折射率ni，厚度di和两侧各自接触相邻层以形成两个界面，其中每个界面在光通过界面时具有相移。

公开(公告)号：US09153747B2

公开(公告)日：2015-10-06

申请号：US14302036

申请日：2014-06-11

申请人： Epistar Corporation

发明人： Wen-Luh Liao ,  Chien-Chung Hsu ,  Yao-Ru Chang ,  Shih-I Chen ,  Chia-Liang Hsu

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/42

CPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting element includes a light-emitting stack which has an active layer, and a non-oxide insulative layer below the light-emitting stack, wherein a refractive index of the non-oxide insulative layer is less than 1.4.

摘要翻译： 发光元件包括具有有源层的发光叠层和发光叠层下面的非氧化物绝缘层，其中非氧化物绝缘层的折射率小于1.4。

公开(公告)号：US09006774B2

公开(公告)日：2015-04-14

申请号：US13932661

申请日：2013-07-01

申请人： Epistar Corporation

发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Ching-Pei Lin

IPC分类号： H01L33/00 ,  H01L33/46 ,  H01L33/40 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/38

CPC分类号： H01L33/46 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

摘要： An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

摘要翻译： 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。

公开(公告)号：US20140175493A1

公开(公告)日：2014-06-26

申请号：US14169035

申请日：2014-01-30

申请人： EPISTAR CORPORATION

发明人： Ying Ming Chen ,  Tzu Chieh Hsu ,  Jhih-Sian Wang ,  Chien-Fu Huang ,  Shih-I Chen

IPC分类号： H01L33/24 ,  H01L33/22 ,  H01L33/10

CPC分类号： H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

摘要翻译： 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。

公开(公告)号：US11901478B2

公开(公告)日：2024-02-13

申请号：US17646102

申请日：2021-12-27

申请人： EPISTAR CORPORATION

发明人： Hao-Min Ku ,  You-Hsien Chang ,  Shih-I Chen ,  Fu-Chun Tsai ,  Hsin-Chih Chiu

IPC分类号： H01L33/00 ,  H01L21/683 ,  H01L33/62

CPC分类号： H01L33/0093 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0095 ,  H01L33/62 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2933/0066

摘要： A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.

公开(公告)号：US10014441B2

公开(公告)日：2018-07-03

申请号：US14579807

申请日：2014-12-22

申请人： EPISTAR CORPORATION

发明人： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

IPC分类号： H01L33/00 ,  H01L33/42 ,  H01L33/38

CPC分类号： H01L33/42 ,  H01L33/382 ,  H01L2924/00 ,  H01L2924/0002

摘要： Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first conductivity type semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second conductivity type semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

公开(公告)号：US09997687B2

公开(公告)日：2018-06-12

申请号：US15401710

申请日：2017-01-09

申请人： EPISTAR CORPORATION

发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC分类号： H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L27/15 ,  H01L33/42 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/44 ,  H01L33/48 ,  H01L25/075 ,  H01L33/32 ,  H01L33/40

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.

公开(公告)号：US09577170B2

公开(公告)日：2017-02-21

申请号：US14663544

申请日：2015-03-20

申请人： Epistar Corporation

发明人： Shih-I Chen ,  Chia-Liang Hsu ,  Tzu-Chieh Hsu ,  Han-Min Wu ,  Ye-Ming Hsu ,  Chien-Fu Huang ,  Chao-Hsing Chen ,  Chiu-Lin Yao ,  Hsin-Mao Liu ,  Chien-Kai Chung

IPC分类号： H01L33/62 ,  H01L27/15 ,  H01L33/42 ,  H01L33/46 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/44 ,  H01L33/48 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/62 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/145 ,  H01L33/32 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/483 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.

摘要翻译： 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。