公开(公告)号：US06562189B1

公开(公告)日：2003-05-13

申请号：US09654248

申请日：2000-08-31

Applicant: Efrain Quiles ,  Hamid Noorbakhsh ,  James D Carducci

Inventor： Efrain Quiles ,  Hamid Noorbakhsh ,  James D Carducci

IPC: H01L2100

CPC classification number: H01J37/32871 ,  H01J37/32623 ,  H01J37/3266

Abstract: A plasma reactor includes a chamber adapted to support an evacuated plasma environment, a passageway connecting the chamber to a region external of the chamber, the passageway being defined by spaced opposing passageway walls establishing a passageway distance therebetweeen, and a plasma-confining magnet assembly adjacent the passageway. The plasma-confining magnet assembly includes a short magnet adjacent one of the passageway walls and having opposing poles spaced from one another by a distance which a fraction of the gap distance, the short magnet having a magnetic orientation along one direction transverse to the direction of the passageway, and a long magnet adjacent the other one of the opposing passageway walls and generally facing the short magnet across the passageway and having opposing poles spaced from one another along a direction transverse to the passageway by a pole displacement distance which is at least nearly as great as the gap distance, the long magnet having a magnetic orientation generally opposite to that of the short magnet.

Abstract translation: 等离子体反应器包括适于支撑真空等离子体环境的室，将室连接到室的外部的通道，该通道由间隔开的相对的通道壁限定，在其间建立通道距离，以及等离子体约束磁体组件相邻 通道。 等离子体限制磁体组件包括一个靠近一个通道壁的短磁体，并且具有彼此间隔的相对的极距离，该距离是间隙距离的一部分，短磁体沿着一个方向具有横向于 所述通道和与所述相对通道壁中的另一个相邻的长磁体，并且大体上面对所述通道的所述短磁体，并且具有相反的磁极沿横向于所述通道的方向彼此间隔开极距位移距离，所述极位移距离至少接近 与间隙距离一样大，长磁体具有与短磁体大致相反的磁性定向。

公开(公告)号：US06797639B2

公开(公告)日：2004-09-28

申请号：US10254969

申请日：2002-09-24

Applicant: James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

Inventor： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC: H01L2100

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

公开(公告)号：US06716302B2

公开(公告)日：2004-04-06

申请号：US10253496

申请日：2002-09-24

Applicant: James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

Inventor： James D Carducci ,  Hamid Noorbakhsh ,  Evans Y Lee ,  Bryan Y Pu ,  Hongching Shan ,  Claes Bjorkman ,  Siamak Salimian ,  Paul E Luscher ,  Michael D Welch

IPC: H05H100

CPC classification number: H01L21/6875 ,  H01J37/32522 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76897 ,  H01L2924/3011

Abstract: A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.

Abstract translation: 一种用于在低于大气压的衬底的等离子体蚀刻处理的电容耦合反应器包括限定处理容积的室主体，设置在室主体上的盖，盖是第一电极，设置在处理容积中的衬底支撑件，并且包括第二电极 耦合到所述第一和第二电极中的至少一个电极的射频源，配置成将处理气体输送到所述处理容积中的处理气体入口，以及具有至少1600升/分钟的抽运能力的抽空泵系统。 较大的泵送能力控制工艺气体的停留时间，以便调节分解成更具反应活性的物质的程度。

公开(公告)号：US06589361B2

公开(公告)日：2003-07-08

申请号：US09882132

申请日：2001-06-15

Applicant: Paul E Luscher ,  James D Carducci ,  Siamak Salimian

Inventor： Paul E Luscher ,  James D Carducci ,  Siamak Salimian

IPC: B08B700

CPC classification number: H01L21/67017 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes an upper plate, a lower plate and a gas manifold disposed there between. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce rotation of the substrate during a cleaning and drying process. A cleaning process involves flowing one or more fluids onto a surface of the substrate during its rotation. One-sided and two-sided cleaning and drying is provided.