公开(公告)号：US20180374684A1

公开(公告)日：2018-12-27

申请号：US16015074

申请日：2018-06-21

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice ,  Yue Guo

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice ,  Yue Guo

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.

公开(公告)号：US20180308667A1

公开(公告)日：2018-10-25

申请号：US15960342

申请日：2018-04-23

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32568 ,  C23C16/45536 ,  C23C16/45544 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32715 ,  H01J2237/1825 ,  H01J2237/327 ,  H01J2237/3323 ,  H01J2237/3344 ,  H01L21/67069

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, and an intra-chamber electrode assembly that includes a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support. Each filament including a conductor surrounded by a cylindrical insulating shell. The plurality of filaments includes a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments. An RF power source is configured to apply a first RF input signal to the first multiplicity of filaments.

公开(公告)号：US20130118686A1

公开(公告)日：2013-05-16

申请号：US13632585

申请日：2012-10-01

Applicant: James D. Carducci ,  Kallol Bera ,  Nipun Misra ,  Larry D. Elizaga

Inventor： James D. Carducci ,  Kallol Bera ,  Nipun Misra ,  Larry D. Elizaga

IPC: H01J37/32

CPC classification number: H01J37/32495 ,  H01J37/32522 ,  Y10T428/13 ,  Y10T428/21 ,  Y10T428/24273 ,  Y10T428/24479

Abstract: A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.

Abstract translation: 提供了一种用于半导体处理室和半导体处理室的衬垫。 在一个实施例中，用于半导体处理室的衬垫包括具有向外延伸凸缘的本体。 多个凸起从凸缘的底表面延伸。 突起具有限定在凸缘的底表面周围不对称地分布的接触区域的底表面。

公开(公告)号：US20130087286A1

公开(公告)日：2013-04-11

申请号：US13629267

申请日：2012-09-27

Applicant: James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

Inventor： James D. Carducci ,  Hamid Tavassoli ,  Ajit Balakrishna ,  Zhigang Chen ,  Andrew Nguyen ,  Douglas A. Buchberger, JR. ,  Kartik Ramaswamy ,  Shahid Rauf ,  Kenneth S. Collins

IPC: H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract translation: 本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。 通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。 此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

公开(公告)号：US20110284166A1

公开(公告)日：2011-11-24

申请号：US13191850

申请日：2011-07-27

Applicant: JAMES D. CARDUCCI ,  ANDREW NGUYEN ,  AJIT BALAKRISHNA ,  MICHAEL C. KUTNEY

Inventor： JAMES D. CARDUCCI ,  ANDREW NGUYEN ,  AJIT BALAKRISHNA ,  MICHAEL C. KUTNEY

IPC: H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32623 ,  Y10T428/13

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract translation: 等离子体处理室具有具有集成流量均衡器的下衬套。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

公开(公告)号：US20110180233A1

公开(公告)日：2011-07-28

申请号：US12886258

申请日：2010-09-20

Applicant: KALLOL BERA ,  JAMES D. CARDUCCI ,  HAMID NOORBAKHSH ,  LARRY D. ELIZAGA ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN

Inventor： KALLOL BERA ,  JAMES D. CARDUCCI ,  HAMID NOORBAKHSH ,  LARRY D. ELIZAGA ,  DOUGLAS A. BUCHBERGER, JR. ,  ANDREW NGUYEN

IPC: F28C3/00

CPC classification number: F28F7/02 ,  H01L21/67109

Abstract: An apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead is provided herein. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead may include a showerhead having a substrate facing surface and one or more plenums for providing one or more process gases through a plurality of gas distribution holes formed through the substrate facing surface of the showerhead; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the showerhead to flow a heat transfer fluid.

Abstract translation: 本发明提供一种用于控制喷头的面向基板表面的热均匀性的装置。 在一些实施例中，喷头的面向衬底的表面的热均匀性可被控制得更均匀。 在一些实施例中，喷头的面向衬底的表面的热均匀性可以以期望的图案被控制为不均匀的。 在一些实施例中，用于控制喷头的面向基板的表面的热均匀性的装置可以包括具有基板对向表面的喷头和一个或多个增压室，用于通过形成的多个气体分配孔来提供一个或多个处理气体 喷头的面向基板的表面; 以及多个流动路径，其具有设置在所述喷头内的基本上等效的流体传导以流过传热流体。

公开(公告)号：US20090188625A1

公开(公告)日：2009-07-30

申请号：US12020696

申请日：2008-01-28

Applicant: JAMES D. CARDUCCI ,  KIN PONG LO ,  KALLOL BERA

Inventor： JAMES D. CARDUCCI ,  KIN PONG LO ,  KALLOL BERA

IPC: H01L21/306

CPC classification number: H01J37/32623 ,  H01J37/32467

Abstract: A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.

Abstract translation: 具有降低的流量均衡器和下腔室衬套的等离子体处理室。 在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。 通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。 通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

公开(公告)号：US06899111B2

公开(公告)日：2005-05-31

申请号：US09999751

申请日：2001-10-31

Applicant: Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

Inventor： Paul E. Luscher ,  James D. Carducci ,  Siamak Salimian ,  Michael D. Welch

IPC: B08B3/04 ,  H01L21/00 ,  B08B3/00

CPC classification number: H01L21/67051 ,  B08B3/04 ,  H01L21/67028 ,  Y10S134/902 ,  Y10S438/905

Abstract: The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.

Abstract translation: 本发明提供一种清洗基板的方法和装置。 清洁室限定适于在其中容纳衬底的处理腔。 在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。 衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。 流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。

公开(公告)号：US06221782B1

公开(公告)日：2001-04-24

申请号：US09287701

申请日：1999-04-06

Applicant: Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

Inventor： Hongching Shan ,  Evans Y. Lee ,  Michael D. Welch ,  Robert W. Wu ,  Bryan Y. Pu ,  Paul E. Luscher ,  James D. Carducci ,  Richard Blume

IPC: H01L213065

CPC classification number: H01J37/32834 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32706

Abstract: A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

公开(公告)号：US20180308663A1

公开(公告)日：2018-10-25

申请号：US15960372

申请日：2018-04-23

Applicant: Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

Inventor： Kenneth S. Collins ,  Kartik Ramaswamy ,  Yue Guo ,  Shahid Rauf ,  Kallol Bera ,  James D. Carducci ,  Michael R. Rice

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32137 ,  C23C16/45536 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a pump coupled to the plasma chamber to evacuate the chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly including a plurality of filaments extending laterally through the plasma chamber between a ceiling of the plasma chamber and the workpiece support, each filament including a conductor surrounded by a cylindrical insulating shell, and an RF power source configured to apply a first RF signal to at least some of the plurality of filaments, to apply a second RF signal of equal frequency to at least some of the plurality of filaments, and to modulate a phase offset between the first RF signal and the second RF signal.