利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

13 条记录 (耗时 0.019 秒)

    Method for producing surface acoustic wave device
    1.
    发明授权
    Method for producing surface acoustic wave device 有权
    声表面波装置的制造方法

    公开(公告)号：US06625855B1

    公开(公告)日：2003-09-30

    申请号：US09678928

    申请日：2000-10-04

    申请人： Eiichi Takata ,  Yasuji Yamamoto ,  Toshimaro Yoneda ,  Michio Kadota

    发明人： Eiichi Takata ,  Yasuji Yamamoto ,  Toshimaro Yoneda ,  Michio Kadota

    IPC分类号： H04R1700

    CPC分类号： H03H3/08 ,  Y10T29/42 ,  Y10T29/49005

    摘要： A method for producing a surface acoustic wave device, includes the steps of preparing a piezoelectric substrate, forming a thin film electrode on the piezoelectric substrate, etching the thin film electrode for forming an IDT, trimming at least one of the piezoelectric substrate and the IDT to adjust an operation frequency of the surface acoustic wave device, and rapidly altering the surface of the IDT for stabilizing the surface of the IDT.

    摘要翻译： 一种表面声波装置的制造方法，其特征在于，包括以下步骤：在压电基板上形成薄膜电极，蚀刻形成IDT的薄膜电极，修整压电基板和IDT中的至少一个 调整声表面波器件的工作频率，并快速地改变IDT的表面以稳定IDT的表面。

    Method for manufacturing an electronic component
    5.
    发明授权
    Method for manufacturing an electronic component 有权
    电子部件的制造方法

    公开(公告)号：US07010837B2

    公开(公告)日：2006-03-14

    申请号：US10410433

    申请日：2003-04-09

    申请人： Eiichi Takata ,  Yasuji Yamamoto ,  Genji Inuidani ,  Michio Kadota

    发明人： Eiichi Takata ,  Yasuji Yamamoto ,  Genji Inuidani ,  Michio Kadota

    IPC分类号： H04R17/00 ,  C23C14/00

    CPC分类号： H03H3/08 ,  H01L41/29 ,  H03H9/64 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156

    摘要： A method for manufacturing an electronic component includes the steps of forming an electrode layer including α-tungsten on a substrate at a substrate temperature of about 100° C. to about 300° C. by a sputtering process, processing the electrode layer so as to have a desired shape, and heat-treating the electrode layer. An electronic component includes a substrate and an electrode layer that is disposed on the substrate directly or indirectly, includes α-tungsten, and has a specific resistance of about 15 μΩ.cm or less and a warpage of about 120 μm or less. A surface acoustic wave filter includes a piezoelectric substrate and an electrode layer, disposed on the piezoelectric substrate, including α-tungsten.

    摘要翻译： 一种制造电子部件的方法包括以下步骤：通过溅射工艺在基板温度为约100℃至约300℃的基板上形成包括α-钨的电极层，处理电极层，以便 具有所需的形状，并对该电极层进行热处理。 电子部件包括直接或间接地设置在基板上的基板和电极层，包括α-钨，并且具有约15μm或更小的电阻率和约120μm或更小的翘曲。 表面声波滤波器包括压电基片和设置在压电基片上的包括α-钨的电极层。

    Surface acoustic wave device
    6.
    发明授权
    Surface acoustic wave device 有权
    表面声波装置

    公开(公告)号：US07327071B2

    公开(公告)日：2008-02-05

    申请号：US11469505

    申请日：2006-09-01

    申请人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

    发明人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

    IPC分类号： H01L41/08

    CPC分类号： H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

    摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

    摘要翻译： 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

    In-line sputtering apparatus
    7.
    发明授权
    In-line sputtering apparatus 有权

    公开(公告)号：US06592729B2

    公开(公告)日：2003-07-15

    申请号：US09931839

    申请日：2001-08-17

    申请人： Kazunori Shimoda ,  Eiichi Takata ,  Michio Kadota ,  Ken Funato

    发明人： Kazunori Shimoda ,  Eiichi Takata ,  Michio Kadota ,  Ken Funato

    IPC分类号： C23C1434

    CPC分类号： C23C14/542 ,  C23C14/044 ,  C23C14/568

    摘要： An in-line sputtering apparatus includes a deposition chamber, a target installed inside the deposition chamber, a substrate holder to hold a substrate, a substrate holder transferring mechanism which transfers the substrate holder relative to the target such that a thin film made of a material of the target that is formed on the substrate held by the substrate holder, first and second thickness distribution correcting members and a plate driving mechanism. The first and second thickness distribution correcting members are provided above the target, and each of the first and second thickness distribution correcting members has a plurality of movable plates. The plate driving mechanism is linked to the first and second thickness distribution correcting members and moves the corresponding movable plates of the first and second distribution correcting plates, symmetrically.

    Angular velocity sensor
    8.
    发明授权
    Angular velocity sensor 失效
    角速度传感器

    公开(公告)号：US5895852A

    公开(公告)日：1999-04-20

    申请号：US786236

    申请日：1997-01-21

    申请人： Kazufumi Moriya ,  Tomoyasu Hasegawa ,  Eiichi Takata ,  Tomio Shibano ,  Tetsuo Osawa

    发明人： Kazufumi Moriya ,  Tomoyasu Hasegawa ,  Eiichi Takata ,  Tomio Shibano ,  Tetsuo Osawa

    IPC分类号： B81B3/00 ,  G01C19/56 ,  G01C19/5755 ,  G01P3/44

    CPC分类号： G01C19/5719

    摘要： In an angular velocity sensor for sensing angular velocities about two axes or an X-axis and a Y-axis which are perpendicular to each other, a frame-shaped oscillator 26 is disposed to the respective support portions 24 fixed on a substrate 22 through support beams 25 and a columnar electrode 33 is disposed in the oscillator 26 by being fixed to the substrate 22 . X-axis displacement sensing units 31, 31 are formed on the right and left sides of the oscillator 26 and Y-axis displacement sensing units 32, 32 are formed to the forward and rearward sides thereof. When an oscillation drive signal is imposed between the oscillator 26 and the columnar electrode 33, an electrostatic attracting force is generated therebetween and the oscillator 26 is oscillated in a Z-axis direction. When an angular velocity .OMEGA.Y is imposed about the Y-axis at this time, the oscillator 26 is displaced to the X-axis by a Coriolis force and the displacement can be sensed by the X-axis displacement sensing units 31, whereas when an angular velocity .OMEGA.X is imposed about the X-axis, the oscillator 26 is displaced to the Y-axis by a Coriolis force and the displacement can be sensed by the Y-axis displacement sensing units 32, so that the angular velocities about the two axes or the X-axis and the Y-axis can be sensed, respectively.

    摘要翻译： 在用于感测围绕彼此垂直的两个轴或X轴和Y轴的角速度的角速度传感器中，框架形振荡器26通过支撑件设置到固定在基板22上的各个支撑部分24 光束25和柱状电极33通过固定到基板22而设置在振荡器26中。 X轴位移检测单元31,31形成在振动器26的左右两侧，并且Y轴位移检测单元32,32形成在其前侧和后侧。 当在振荡器26和柱状电极33之间施加振荡驱动信号时，在其间产生静电吸引力，振荡器26在Z轴方向上振荡。 此时，当关于Y轴施加角速度OMEGA Y时，振荡器26通过科里奥利力移位到X轴，并且位移可以由X轴位移检测单元31感测，而当 关于X轴施加角速度OMEGA X，振荡器26通过科里奥利力移位到Y轴，并且可以通过Y轴位移检测单元32感测位移，使得围绕两轴的角速度 可以分别检测轴或X轴和Y轴。

    Frost and dew sensor
    9.
    发明授权
    Frost and dew sensor 失效
    冰霜和露水传感器

    公开(公告)号：US5000579A

    公开(公告)日：1991-03-19

    申请号：US553740

    申请日：1990-07-18

    申请人： Akira Kumada ,  Eiichi Takata ,  Michihiro Murata

    发明人： Akira Kumada ,  Eiichi Takata ,  Michihiro Murata

    IPC分类号： G01N25/68 ,  G01N27/18

    CPC分类号： G01N27/18 ,  G01N25/68

    摘要： In a frost and dew sensor composed of two thermosensitive resistors, a power source and an arithmetic circuit, frost or dew is detected from the change of a differential temperature between the two thermosensitive resistors as two different currents from the power source are supplied to the respective thermosensitive resistors. In an alternative form, the sensor has a single thermosensitive resistor, which is energized as two different currents are alternately supplied from the power source so that frost or dew is detected by comparison of the time-lags between the two outputs from the thermosensitive resistor.

    Angular velocity sensor
    10.
    发明授权
    Angular velocity sensor 失效
    角速度传感器

    公开(公告)号：US6070463A

    公开(公告)日：2000-06-06

    申请号：US814834

    申请日：1997-03-11

    申请人： Kazufumi Moriya ,  Tomoyasu Hasegawa ,  Eiichi Takata ,  Tomio Shibano ,  Tetsuo Osawa

    发明人： Kazufumi Moriya ,  Tomoyasu Hasegawa ,  Eiichi Takata ,  Tomio Shibano ,  Tetsuo Osawa

    IPC分类号： G01C19/56 ,  G01C19/5755 ,  G01P9/04 ,  G01P3/02

    CPC分类号： G01C19/5719

    摘要： A downsized angular velocity sensor is disclosed in which the detection sensitivity is improved. An oscillator oscillatably supported by support beams along two horizontal axes is formed of two rod-like members extending along the Y axis and an interconnecting portion. A hollow region is formed between each of the rod-like members and the interconnecting portion. Displacement detecting sections are disposed in the hollow regions. The displacement detecting sections are each constructed of an antenna-like electrode array, so that a greater amount of change in capacitance generated between the antenna-like electrodes can be obtained.

    摘要翻译： 公开了一种小型角速度传感器，其中提高了检测灵敏度。 沿着两个水平轴由支撑梁振荡地支撑的振荡器由沿着Y轴延伸的两个杆状构件和互连部分形成。 在每个棒状构件和互连部分之间形成中空区域。 位移检测部分设置在中空区域中。 位移检测部分由天线状电极阵列构成，从而可以获得在天线状电极之间产生的更大量的电容变化。