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    Semiconductor pressure sensor
    1.
    发明授权
    Semiconductor pressure sensor 有权
    半导体压力传感器

    公开(公告)号：US08710600B2

    公开(公告)日：2014-04-29

    申请号：US12949459

    申请日：2010-11-18

    申请人： Eiji Yoshikawa ,  Shinichi Izuo

    发明人： Eiji Yoshikawa ,  Shinichi Izuo

    IPC分类号： H01L29/84

    CPC分类号： G01L9/0042 ,  B81B3/0078 ,  B81B2201/0264 ,  B81B2203/0127

    摘要： A semiconductor pressure sensor that can improve diaphragm breakage pressure tolerance is provided.Included are: a first semiconductor substrate on which is formed a recess portion that has an opening on a first surface in a thickness direction; a second semiconductor substrate that is disposed so as to face the first surface of the first semiconductor substrate; and a first silicon oxide film that is interposed between the first semiconductor substrate and the second semiconductor substrate, and on which is formed a penetrating aperture that communicates between the recess portion and the second semiconductor substrate, and at least a portion of an edge portion of the penetrating aperture is positioned inside an opening edge portion of the recess portion when viewed from a side facing the penetrating aperture and the opening of the recess portion.

    摘要翻译： 提供了可以提高隔膜破裂压力公差的半导体压力传感器。 包括：第一半导体衬底，其上形成有在厚度方向上在第一表面上具有开口的凹部; 第二半导体衬底，其被设置为面对第一半导体衬底的第一表面; 以及第一氧化硅膜，其被插入在所述第一半导体基板和所述第二半导体基板之间，并且在所述第一氧化硅膜上形成有在所述凹部和所述第二半导体基板之间连通的贯通孔，并且所述第一氧化硅膜的至少一部分 当从面向穿透孔的侧面和凹部的开口观察时，贯通孔位于凹部的开口边缘部的内侧。

    Semiconductor pressure sensor and method of manufacturing semiconductor pressure sensor
    2.
    发明授权
    Semiconductor pressure sensor and method of manufacturing semiconductor pressure sensor 有权
    半导体压力传感器及半导体压力传感器的制造方法

    公开(公告)号：US08647908B2

    公开(公告)日：2014-02-11

    申请号：US13413846

    申请日：2012-03-07

    申请人： Eiji Yoshikawa ,  Shinichi Izuo

    发明人： Eiji Yoshikawa ,  Shinichi Izuo

    IPC分类号： H01L21/62 ,  H01L29/84

    CPC分类号： B81C1/00626 ,  B81B2201/0264 ,  G01L9/0048 ,  G01L9/0051

    摘要： A semiconductor pressure sensor includes a first substrate having a concave portion and an alignment mark at a main surface thereof, and a second substrate formed on the main surface of the first substrate and having a diaphragm provided to cover a space inside the concave portion of the first substrate and a gauge resistor provided on the diaphragm. The alignment mark is provided to be exposed from the second substrate. Accordingly, it is possible to obtain a semiconductor pressure sensor and a method of manufacturing the same with reduced production costs and with improved pressure measuring accuracy.

    摘要翻译： 半导体压力传感器包括：在其主表面上具有凹部和对准标记的第一基板和形成在第一基板的主表面上的第二基板，具有设置成覆盖第一基板的凹部内的空间的隔膜 第一基板和设置在隔膜上的规格电阻器。 设置对准标记以从第二基板露出。 因此，可以获得半导体压力传感器及其制造方法，降低生产成本并提高压力测量精度。

    SOI wafer, manufacturing method therefor, and MEMS device
    4.
    发明授权
    SOI wafer, manufacturing method therefor, and MEMS device 有权
    SOI晶片，其制造方法和MEMS器件

    公开(公告)号：US09212049B2

    公开(公告)日：2015-12-15

    申请号：US13743878

    申请日：2013-01-17

    申请人： Eiji Yoshikawa ,  Jyunichi Ichikawa ,  Yukihisa Yoshida

    发明人： Eiji Yoshikawa ,  Jyunichi Ichikawa ,  Yukihisa Yoshida

    IPC分类号： H01L21/00 ,  B81B7/00 ,  H01L21/762 ,  H01L29/16 ,  B81B3/00 ,  B81C1/00 ,  H01L23/26

    CPC分类号： B81B7/0038 ,  B81B3/0018 ,  B81C1/00285 ,  H01L21/76259 ,  H01L23/26 ,  H01L29/16 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer (1) and an active layer wafer (6) which are bonded together with an oxide film (3) therebetween, each of the support wafer (1) and the active layer wafer (6) being a silicon wafer; a cavity (1b) formed in a bonding surface of at least one of the silicon wafers; and a gettering material (2) formed on a surface on a side opposite to the bonding surface.

    摘要翻译： 为了获得具有优异的金属杂质吸收能力的SOI晶片，提供了一种制造SOI晶片的有效方法和使用这种SOI晶片的高可靠性MEMS器件，其包括：支撑晶片（1） 以及与它们之间的氧化膜（3）结合在一起的有源层晶片（6），所述支撑晶片（1）和所述有源层晶片（6）中的每一个都是硅晶片; 形成在所述硅晶片中的至少一个的接合面中的空腔（1b） 以及形成在与所述接合面相反的一侧的表面上的吸气材料（2）。

    Transition metal complexes, ligands, catalysts for olefin polymerization, and process for production of olefin polymers
    5.
    发明授权
    Transition metal complexes, ligands, catalysts for olefin polymerization, and process for production of olefin polymers 失效
    过渡金属络合物，配体，烯烃聚合用催化剂和烯烃聚合物生产方法

    公开(公告)号：US07241927B2

    公开(公告)日：2007-07-10

    申请号：US11324260

    申请日：2006-01-04

    申请人： Hidenori Hanaoka ,  Taichi Senda ,  Eiji Yoshikawa ,  Satoshi Kobayashi

    发明人： Hidenori Hanaoka ,  Taichi Senda ,  Eiji Yoshikawa ,  Satoshi Kobayashi

    IPC分类号： C07C43/20 ,  C07C43/205 ,  C07C43/215

    CPC分类号： C08F10/00 ,  C07F17/00 ,  C08F4/65908 ,  C08F4/65912 ,  C08F10/02 ,  C08F210/16 ,  Y10S526/943 ,  C08F4/6592 ,  C08F210/14 ,  C08F2500/03 ,  C08F2500/10

    摘要： A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyl or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.

    摘要翻译： 由式（1）表示的过渡金属络合物：其中M是第4族过渡金属，A是第16族元素，B是第14族元素，n是0或1的整数，R 1， R 2，R 3，R 4和R 4可以相同或不同，并且各自独立地表示选自以下的取代基： 的基团（I）和（II）：基团（I）：氢，烷基等，基团（II）：烷氧基，烷硫基等，条件是R 1， R 2，R 3和R 4是选自（II）组的取代基。 R 5，R 6，R 7，R 8，R 9， R 10，X 1和X 2可以相同或不同，各自为氢，卤素，烷基等; 并提供包含所述络合物，有机铝化合物和硼化合物的烯烃聚合催化剂。

    Acceleration sensor
    6.
    发明授权
    Acceleration sensor 有权
    加速度传感器

    公开(公告)号：US06955086B2

    公开(公告)日：2005-10-18

    申请号：US10739069

    申请日：2003-12-19

    申请人： Eiji Yoshikawa ,  Masahiro Tsugai ,  Nobuaki Konno ,  Yoshiaki Hirata

    发明人： Eiji Yoshikawa ,  Masahiro Tsugai ,  Nobuaki Konno ,  Yoshiaki Hirata

    IPC分类号： G01P15/125

    CPC分类号： G01P15/125

    摘要： An acceleration sensor includes first and second fixed electrodes on a substrate, and a movable electrode located above the first and second fixed electrodes, with respect to the substrate, and facing them. The movable electrode is elastically supported on the substrate by a first elastic supporting body and is movable. A mass, which is elastically supported on the substrate by a second elastic supporting body, moves in response to an acceleration in a direction perpendicular to the substrate. A linking portion links the movable electrode and the mass at a position spaced from an axis of movement of the movable electrode by a distance. Acceleration is measured based on changes in a first capacitance between the first fixed electrode and the movable electrode and a second capacitance between the second fixed electrode and the movable electrode. Thus, a highly impact resistant and highly reliable acceleration sensor is obtained.

    摘要翻译： 加速度传感器包括基板上的第一固定电极和第二固定电极以及相对于基板位于第一和第二固定电极上方并面向它们的可动电极。 可移动电极通过第一弹性支撑体弹性支撑在基板上并且可移动。 通过第二弹性支撑体弹性地支撑在基板上的质量响应于垂直于基板的方向的加速度而移动。 连接部分在与可移动电极的运动轴线间隔一定距离的位置处连接可移动电极和质量块。 基于第一固定电极和可动电极之间的第一电容的变化和第二固定电极与可动电极之间的第二电容来测量加速度。 因此，获得了高度耐冲击和高度可靠的加速度传感器。

    Pressure switch
    7.
    发明授权
    Pressure switch 有权
    压力开关

    公开(公告)号：US06194678B1

    公开(公告)日：2001-02-27

    申请号：US09567007

    申请日：2000-05-09

    申请人： Eiji Yoshikawa ,  Masahiro Tsugai ,  Toru Araki

    发明人： Eiji Yoshikawa ,  Masahiro Tsugai ,  Toru Araki

    IPC分类号： H01H3534

    CPC分类号： H01H1/0036 ,  H01H35/34

    摘要： A pressure switch with improved sealing of an airtight chamber, and improved electrical characteristics reducing chattering, increasing response rate, and minimizing the pressure necessary for activation. The pressure switch includes an upper substrate with a diaphragm readily deformed by an applied stress, a lower substrate overlapped with the upper substrate to form the airtight chamber, a contact electrically switched in response to the deformation of the diaphragm, and a sealing member continuously surrounding the airtight chamber, disposed between the first and second substrate, and hermetically sealing the airtight chamber.

    摘要翻译： 具有改进的密封腔密封的压力开关，以及改善的电气特性，减少抖动，增加响应速度，并使活化所需的压力最小化。 压力开关包括具有通过施加的应力容易变形的膜片的上基板，与上基板重叠的下基板以形成气密室，响应于膜片的变形而电切换的触点和连续围绕的密封构件 所述密封室设置在所述第一和第二基板之间，并且气密地密封所述气密室。

    Transition metal complexes, ligands, polymerization catalysts for olefins, and process for production of olefin polymers
    10.
    发明授权
    Transition metal complexes, ligands, polymerization catalysts for olefins, and process for production of olefin polymers 失效
    过渡金属络合物，配体，烯烃聚合催化剂和烯烃聚合物生产方法

    公开(公告)号：US07141690B2

    公开(公告)日：2006-11-28

    申请号：US10503252

    申请日：2003-02-06

    申请人： Hidenori Hanaoka ,  Taichi Senda ,  Eiji Yoshikawa ,  Satoshi Kobayashi

    发明人： Hidenori Hanaoka ,  Taichi Senda ,  Eiji Yoshikawa ,  Satoshi Kobayashi

    IPC分类号： C08F4/64 ,  C07F7/28 ,  C07F7/00

    CPC分类号： C08F10/00 ,  C07F17/00 ,  C08F4/65908 ,  C08F4/65912 ,  C08F10/02 ,  C08F210/16 ,  Y10S526/943 ,  C08F4/6592 ,  C08F210/14 ,  C08F2500/03 ,  C08F2500/10

    摘要： A transition metal complex represented by the formula (1): wherein M is a Group 4 transition metal, A is a Group 16 element, B is a Group 14 element, n is an integer of 0 or 1, R1, R2, R3 and R4 may be the same or different and each independently denotes a substituent selected from the group consisting of the groups (I) and (II): group (I): hydrogen, alkyl and so on, group (II): alkoxy, alkylthio and so on, provided that at least one of R1, R2, R3 and R4 is a substituent selected from group (II); R5, R6, R7, R8, R9, R10, X1 and X2 may be the same or different and are each hydrogen, halogen, alkyd or the like; and a catalyst for olefin polymerization comprising said complex, an organoaluminum compound and a boron compound are provided.

    摘要翻译： 由式（1）表示的过渡金属络合物：其中M是第4族过渡金属，A是第16族元素，B是第14族元素，n是0或1的整数，R 1， R 2，R 3，R 4和R 4可以相同或不同，并且各自独立地表示选自以下的取代基： 的基团（I）和（II）：基团（I）：氢，烷基等，基团（II）：烷氧基，烷硫基等，条件是R 1， R 2，R 3和R 4是选自（II）组的取代基。 R 5，R 6，R 7，R 8，R 9， R 10，X 1和X 2可以相同或不同，各自为氢，卤素，醇酸等; 并提供包含所述络合物，有机铝化合物和硼化合物的烯烃聚合催化剂。