摘要:
The present invention provides compounds which have, particularly, an inhibitory activity on production of melanin, a cell activating activity and an anti-bacterial activity, are derived from natural sources, and are safe and not harmful. One or more compounds represented by the following general formula are contained: wherein R1 represents —CH2OH, —COOR6 or —COOX, whereupon X is a group capable forming a salt and R6 represents hydrogen or a C1 to C3 lower alkyl group; R2 to R5 each represent hydrogen or a methyl group; and . . . A . . . represents ═C(CH3)—, —C(CH3)═, —C(═CH2)—, —CH(CH3)— or —C(OH) (CH3)—.
摘要:
The present invention provides compounds which have, particularly, an inhibitory activity on production of melanin, a cell activating activity and an anti-bacterial activity, are derived from natural sources, and are safe and not harmful. One or more compounds represented by the following general formula are contained: wherein R1 represents —CH2OH, —COOR6 or —COOX, whereupon X is a group capable forming a salt and R6 represents hydrogen or a C1 to C3 lower alkyl group; R2 to R5 each represent hydrogen or a methyl group; and . . . A . . . represents ═C(CH3)—, —C(CH3)═, —C(═CH2)—, —CH(CH3)— or —C(OH)(CH3)—.
摘要:
A process is disclosed for producing a diorganopolysiloxane by polymerizing a cyclic siloxane expressed by the following general formula (2) ##STR1## wherein R.sup.3 represents methyl group, ethyl group, or phenyl group, and p is an integer of 3 or 4, by an anion living polymerization using a lithium trialkylsilonolate or an alkyl lithium as a polymerization initiator and then terminating the anion living polymerization with an acid or a chlorosilane derivative, the improvement comprising treating a diorganopolysiloxane which is modified with a silanol at both its terminals and included in the cyclic siloxane as impurities, with an acetylating agent.
摘要:
An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B
摘要翻译:使用开尔文接触方法的半导体集成电路的电特性测试可以在预处理中进行,而不会妨碍半导体芯片尺寸的减小或不使电路设计复杂化。 测试装置中的探针卡包括用于开尔文接触的探针,用于开尔文接触的探针包括线圈探针和设置在线圈探针内的POGO针探针,以及用于两端测量的探针。 考虑到用于开尔文接触的探针与其接触的电极焊盘之一的面积为B,另一个电极的面积为A = B <2A,则晶片上每个芯片区域中形成的电极焊盘的关系为A = B <2A 用于两端测量的探头接触的垫是A.
摘要:
An electrical characteristics test for a semiconductor integrated circuit using a Kelvin contact method can be conducted in a pre-process without obstructing the reduction in size of a semiconductor chip or without complicating the circuit design. A probe card in a testing apparatus includes probes for Kelvin contact, the probes for Kelvin contact including a coil probe and a POGO pin probe disposed inside the coil probe, and a probe for two-terminal measurement. Electrode pads formed in each chip area over a wafer are in a relation of A=B
摘要翻译:使用开尔文接触方法的半导体集成电路的电特性测试可以在预处理中进行,而不会妨碍半导体芯片尺寸的减小或不使电路设计复杂化。 测试装置中的探针卡包括用于开尔文接触的探针,用于开尔文接触的探针包括线圈探针和设置在线圈探针内的POGO针探针,以及用于两端测量的探针。 考虑到用于开尔文接触的探针与其接触的电极焊盘之一的面积为B,另一个电极的面积为A = B <2A,则晶片上每个芯片区域中形成的电极焊盘的关系为A = B <2A 用于两端测量的探头接触的垫是A.
摘要:
A process for producing a rod-form silica from a silicic acid ester according to a sol-gel process, which silica has a rod-form having a high aspect ratio and is advantageously used as a filler for resin sealants for semiconductors, is provided, which process comprises adding 35 to 150 parts by weight of a sol of a silicic acid ester to 100 parts by weight of a hydrophobic medium to form an emulsion, subjecting the emulsion to a temperature rise at two stages, the first temperature rise being by 5.degree. to 30.degree. C. at a rate of 10.degree. to 200.degree. C./min. or less and the second temperature rise being by 3.degree. to 20.degree. C. at a rate of 0.5.degree. to 10.degree. C./min., to form a rod-form silica.
摘要:
A process for distilling a crude acrylic silane solution particularly containing impurities in a commercial scale for separating acrylic silane in the presence of a hindered phenol and/or amine as polymerization inhibitor, the process being improved by using simultaneously a dialkyldithiocarbamic acid copper and/or N-nitrosophenylhydroxylamine salt as synergistic polymerization inhibitor.