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公开(公告)号:US08378576B2
公开(公告)日:2013-02-19
申请号:US12897400
申请日:2010-10-04
申请人: Einstein Noel Abarra , Yasushi Miura , Eiji Fujiyama , Naoyuki Suzuki , Yasuyuki Taneda , Yasushi Kamiya
发明人: Einstein Noel Abarra , Yasushi Miura , Eiji Fujiyama , Naoyuki Suzuki , Yasuyuki Taneda , Yasushi Kamiya
IPC分类号: H05B31/26
CPC分类号: H01J27/08
摘要: [Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients αP, αM and αG, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: αP>αM≧αG. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.
摘要翻译: 本发明的目的在于减少电网组件中的热变形的离子束发生器。 [解决异议的结构]选择放电室,安装台(40)和提取栅极电极组件(20)的侧壁(1A)的热膨胀系数αP,αM和αG具有以下关系:αP>αM ≧αG。 例如,放电室侧壁的材料为不锈钢铝,栅格材料为Mo,W或C,平台材料为Ti或Mo。
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公开(公告)号:US09312102B2
公开(公告)日:2016-04-12
申请号:US13315567
申请日:2011-12-09
申请人: Yasushi Kamiya , Einstein Noel Abarra , Yuta Konno
发明人: Yasushi Kamiya , Einstein Noel Abarra , Yuta Konno
IPC分类号: H01J37/302 , H01J37/305
CPC分类号: H01J37/302 , G05B15/02 , H01J37/3053 , H01J2237/0044 , H01J2237/043 , H01J2237/334
摘要: A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.
摘要翻译: 一种在包括保持衬底的衬底保持器,发射离子束的离子源,发射电子的中和器和快门的设备中处理衬底的方法,该快门设置在离子源和中和器之间的空间中 布置有衬底保持器布置的空间,并且被构造成屏蔽朝向衬底行进的离子束,包括调节由中和器发射的电子的量并且在快门移动期间到达衬底保持器。
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公开(公告)号:US20080020140A1
公开(公告)日:2008-01-24
申请号:US11764745
申请日:2007-06-18
申请人: Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
发明人: Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
IPC分类号: C23C16/34
CPC分类号: C23C16/4411 , C23C16/345 , C23C16/44
摘要: A silicon nitride film forming method makes possible the high reproducibility of film quality or film thickness. The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.
摘要翻译: 氮化硅膜形成方法可以实现膜质量或膜厚度的高再现性。 氮化硅膜形成方法通过将加热元件保持在预定温度并且通过分解和/或激活从气体供应系统供应的原料气体而将氮化硅膜沉积在基板表面上。
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公开(公告)号:US07704556B2
公开(公告)日:2010-04-27
申请号:US11764745
申请日:2007-06-18
申请人: Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
发明人: Hitoshi Morisaki , Yasushi Kamiya , Shuji Nomura , Masahiro Totuka , Tomoki Oku , Ryo Hattori
IPC分类号: C23C16/34
CPC分类号: C23C16/4411 , C23C16/345 , C23C16/44
摘要: The silicon nitride film forming method deposits a silicon nitride film on the substrate surface by maintaining the heating element at a predetermined temperature and by decomposing and/or activating a raw material gas supplied from the gas supply system.
摘要翻译: 氮化硅膜形成方法通过将加热元件保持在预定温度并且通过分解和/或激活从气体供应系统供应的原料气体而将氮化硅膜沉积在基板表面上。
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