公开(公告)号：US08378576B2

公开(公告)日：2013-02-19

申请号：US12897400

申请日：2010-10-04

申请人： Einstein Noel Abarra ,  Yasushi Miura ,  Eiji Fujiyama ,  Naoyuki Suzuki ,  Yasuyuki Taneda ,  Yasushi Kamiya

发明人： Einstein Noel Abarra ,  Yasushi Miura ,  Eiji Fujiyama ,  Naoyuki Suzuki ,  Yasuyuki Taneda ,  Yasushi Kamiya

IPC分类号： H05B31/26

CPC分类号： H01J27/08

摘要： [Objection of the invention]An ion beam generator, a thermal distortion in a grid assembly is reduced. [Structure to solve the objection]Thermal expansion coefficients αP, αM and αG, for a sidewall (1A) of a discharge chamber, mounting platform (40) and extraction grid electrode assembly (20) are selected to have a relation: αP>αM≧αG. For example, the material of discharge chamber sidewall is stainless steel o aluminum, the material of grids is Mo, W or C and the material of platform is Ti or Mo.

摘要翻译： 本发明的目的在于减少电网组件中的热变形的离子束发生器。 [解决异议的结构]选择放电室，安装台（40）和提取栅极电极组件（20）的侧壁（1A）的热膨胀系数αP，αM和αG具有以下关系：αP>αM ≧αG。 例如，放电室侧壁的材料为不锈钢铝，栅格材料为Mo，W或C，平台材料为Ti或Mo。

公开(公告)号：US09312102B2

公开(公告)日：2016-04-12

申请号：US13315567

申请日：2011-12-09

申请人： Yasushi Kamiya ,  Einstein Noel Abarra ,  Yuta Konno

发明人： Yasushi Kamiya ,  Einstein Noel Abarra ,  Yuta Konno

IPC分类号： H01J37/302 ,  H01J37/305

CPC分类号： H01J37/302 ,  G05B15/02 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/043 ,  H01J2237/334

摘要： A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

摘要翻译： 一种在包括保持衬底的衬底保持器，发射离子束的离子源，发射电子的中和器和快门的设备中处理衬底的方法，该快门设置在离子源和中和器之间的空间中 布置有衬底保持器布置的空间，并且被构造成屏蔽朝向衬底行进的离子束，包括调节由中和器发射的电子的量并且在快门移动期间到达衬底保持器。

公开(公告)号：US20120145535A1

公开(公告)日：2012-06-14

申请号：US13315567

申请日：2011-12-09

申请人： Yasushi KAMIYA ,  Einstein Noel Abarra ,  Yuta Konno

发明人： Yasushi KAMIYA ,  Einstein Noel Abarra ,  Yuta Konno

IPC分类号： H01L21/02 ,  B44C1/22 ,  C23C14/34

CPC分类号： H01J37/302 ,  G05B15/02 ,  H01J37/3053 ,  H01J2237/0044 ,  H01J2237/043 ,  H01J2237/334

摘要： A method of processing a substrate in an apparatus including a substrate holder which holds the substrate, an ion source which emits an ion beam, a neutralizer which emits electrons, and a shutter which is arranged between a space in which the ion source and the neutralizer are arranged and a space in which the substrate holder is arranged, and configured to shield the ion beam traveling toward the substrate, includes adjusting an amount of electrons which are emitted by the neutralizer and reach the substrate holder during movement of the shutter.

摘要翻译： 一种在包括保持衬底的衬底保持器，发射离子束的离子源，发射电子的中和器和快门的设备中处理衬底的方法，该快门设置在离子源和中和器之间的空间中 布置有衬底保持器布置的空间，并且被构造成屏蔽朝向衬底行进的离子束，包括调节由中和器发射的电子的量并且在快门移动期间到达衬底保持器。

公开(公告)号：US08776542B2

公开(公告)日：2014-07-15

申请号：US12975962

申请日：2010-12-22

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： F25D23/12 ,  H05K7/20 ,  F25D25/02

CPC分类号： H05K7/20009 ,  F25D25/027 ,  H01J37/34 ,  H05K7/20372 ,  H05K7/20545

摘要： A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed.

摘要翻译： 在溅射装置的真空室中冷却晶片的冷却系统包括用于冷却晶片的晶片冷却阶段，用于冷却晶片冷却级的冷却机构，将冷却气体引入到晶片冷却级的冷却气体供给单元 晶片旋转机构，其将晶片保持在与晶片冷却台分离预定间隙的状态，并且在保持晶片的同时旋转;以及驱动机构，其以预定旋转速度旋转晶片旋转机构。

公开(公告)号：US08016537B2

公开(公告)日：2011-09-13

申请号：US12750955

申请日：2010-03-31

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67207 ,  Y10S414/137

摘要： A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

摘要翻译： 提供了一种结构，其中用于从外部携带未加工的晶片并将经处理的晶片运送到外部的负载锁定室（51），要连接到负载锁定室的第一端部输送室（54a），至少一个 中间传送室（54b），彼此相邻设置并且能够独立处理的多组一对处理模块（52a，52b）和设置在相对的端部的第二端部传送室（54c） 负载锁定室的一侧串联连接。 每组处理模块（52a，52b，52c和52d）在第一端部输送室和中间输送室之间，中间输送室之间以及中间输送室和第二端部输送室之间一个接一个地布置， 分别。

公开(公告)号：US09058962B2

公开(公告)日：2015-06-16

申请号：US13328793

申请日：2011-12-16

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： H01J37/34 ,  H01F7/02

CPC分类号： H01F7/0273 ,  H01F7/0278 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01J2237/3322

摘要： A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

摘要翻译： 磁体单元具有第一磁体元件和第二磁体元件。 第一磁体元件包括设置成直立在磁轭板上的第一磁体，设置成直立在磁轭板上并具有与第一磁体不同的磁极的第二磁体，以及第三磁体， 第一磁体和第二磁体之间的倾斜。 第二磁体元件包括：第四磁体，其设置成直立在磁轭板上;第五磁体，其布置成直立在磁轭板上，并具有与第四磁体不同的磁极;以及第六磁体， 在第四磁体和第五磁体之间的倾斜。 第一磁体元件和第二磁体元件交替排列成环形。

公开(公告)号：US20120160673A1

公开(公告)日：2012-06-28

申请号：US13328793

申请日：2011-12-16

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35 ,  H01F7/02

CPC分类号： H01F7/0273 ,  H01F7/0278 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01J2237/3322

摘要： A magnet unit has a first magnet element and a second magnet element. The first magnet element includes a first magnet which is provided to stand upright on a yoke plate, a second magnet which is provided to stand upright on the yoke plate and has a magnetic pole unlike the first magnet, and a third magnet which is provided with a tilt between the first magnet and the second magnet. The second magnet element includes a fourth magnet which is provided to stand upright on the yoke plate, a fifth magnet which is arranged to stand upright on the yoke plate and has a magnetic pole unlike the fourth magnet, and a sixth magnet which is provided with a tilt between the fourth magnet and the fifth magnet. The first magnet element and the second magnet element are alternately arranged in an endless shape.

摘要翻译： 磁体单元具有第一磁体元件和第二磁体元件。 第一磁体元件包括设置成直立在磁轭板上的第一磁体，设置成直立在磁轭板上并具有与第一磁体不同的磁极的第二磁体，以及第三磁体， 第一磁体和第二磁体之间的倾斜。 第二磁体元件包括：第四磁体，其被设置成直立在磁轭板上;第五磁体，其布置成直立在磁轭板上并具有与第四磁体不同的磁极;以及第六磁体， 在第四磁体和第五磁体之间的倾斜。 第一磁体元件和第二磁体元件交替排列成环形。

公开(公告)号：US08053747B2

公开(公告)日：2011-11-08

申请号：US12579636

申请日：2009-10-15

申请人： Einstein Noel Abarra ,  Masahiro Shibamoto

发明人： Einstein Noel Abarra ,  Masahiro Shibamoto

IPC分类号： H01L21/00

CPC分类号： H01J37/317 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/022 ,  H01J2237/0822 ,  H01J2237/3156 ,  H01J2237/316

摘要： A method for cleaning a substrate processing apparatus in which a first ion beam generator and a second ion beam generator are arranged opposite to each other to sandwich a plane on which a substrate is to be placed, and which processes two surfaces of the substrate, comprises steps of retreating the substrate from a position between the first ion beam generator and the second ion beam generator, and cleaning the second ion beam generator by emitting an ion beam from the first ion beam generator to the second ion beam generator.

摘要翻译： 一种清洗基板处理装置的方法，其中第一离子束发生器和第二离子束发生器彼此相对布置以夹持其上放置基板的平面，并且处理基板的两个表面，包括 从第一离子束发生器和第二离子束发生器之间的位置退回衬底的步骤，以及通过从第一离子束发生器向第二离子束发生器发射离子束来清洁第二离子束发生器。

公开(公告)号：US08043483B2

公开(公告)日：2011-10-25

申请号：US12684359

申请日：2010-01-08

申请人： Tetsuya Endo ,  Einstein Noel Abarra

发明人： Tetsuya Endo ,  Einstein Noel Abarra

IPC分类号： C23C14/35

CPC分类号： C23C14/225 ,  C23C14/044 ,  C23C14/3407 ,  C23C14/505 ,  C23C14/548 ,  H01F41/18 ,  H01J37/34 ,  H01J37/3405 ,  H01J37/3414 ,  H01J37/3435 ,  H01J37/3455

摘要： To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes. Further, it is constituted such that a shield plate is arranged between the sputtering target supporting surface and the substrate supporting surface, and is rotatable independently from the cathode and the stage.

摘要翻译： 为了提供一种溅射装置，其能够通过配置目标物和基板使得能够进行倾斜成膜，从而使从靶材发射的溅射粒子选择性倾斜地进入基板，并且可以均匀且紧凑地形成具有高单轴磁各向异性的磁性膜。 溅射装置包括具有溅射靶支撑表面的阴极，阴极设置有溅射靶支撑表面旋转的旋转轴，以及具有基板支撑表面的台，该台设置有旋转轴线， 基板支撑面旋转，并且溅射装置构成为使得溅射靶支撑表面和基板支撑表面彼此面对，并且可以围绕各自的旋转轴独立地旋转。 此外，其构造使得屏蔽板布置在溅射靶支撑表面和基板支撑表面之间，并且可独立于阴极和台转动。

公开(公告)号：US20100215460A1

公开(公告)日：2010-08-26

申请号：US12750955

申请日：2010-03-31

申请人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

发明人： Naoki Watanabe ,  Einstein Noel Abarra ,  David Djulianto Djayaprawira ,  Yasumi Kurematsu

IPC分类号： H01L21/677

CPC分类号： H01L21/67184 ,  H01L21/67161 ,  H01L21/67173 ,  H01L21/67207 ,  Y10S414/137

摘要： A structure is provided in which a load lock chamber (51) for carrying in an unprocessed wafer from outside and carrying out a processed wafer to outside, a first end conveyance chamber (54a) to be connected to the load lock chamber, at least one intermediate conveyance chamber (54b), a plurality of sets of a pair of process modules (52a, 52b) provided adjacent to each other and capable of independent processing, and a second end conveyance chamber (54c) disposed at the end part on the opposite side of the load lock chamber are connected in series. Each set of process modules (52a, 52b, 52c and 52d) is arranged one by one between the first end conveyance chamber and the intermediate conveyance chamber, between the intermediate conveyance chambers, and between the intermediate conveyance chamber and the second end conveyance chamber, respectively.

摘要翻译： 提供了一种结构，其中用于从外部携带未加工的晶片并将经处理的晶片运送到外部的负载锁定室（51），要连接到负载锁定室的第一端部输送室（54a），至少一个 中间传送室（54b），彼此相邻设置并且能够独立处理的多组一对处理模块（52a，52b）和设置在相对的端部的第二端部传送室（54c） 负载锁定室的一侧串联连接。 每组处理模块（52a，52b，52c和52d）在第一端部输送室和中间输送室之间，中间输送室之间以及中间输送室和第二端部输送室之间一个接一个地布置， 分别。