-
1.发明申请Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效基板处理方法，基板处理装置以及半导体装置的制造方法公开(公告)号：US20070190462A1
公开(公告)日：2007-08-16
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/20
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。
-
2.发明授权Substrate processing method, substrate processing apparatus, and manufacturing method of semiconductor device 失效基板处理方法，基板处理装置以及半导体装置的制造方法公开(公告)号：US07794923B2
公开(公告)日：2010-09-14
申请号：US11654565
申请日：2007-01-18
申请人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
发明人： Eishi Shiobara , Kentaro Matsunaga , Daisuke Kawamura , Tomoyuki Takeishi , Kei Hayasaki , Shinichi Ito
IPC分类号： G03F7/00
CPC分类号： G03F7/70341 , Y10S430/162
摘要： A substrate processing method including while a liquid is supplied between a processing target substrate to be applied with exposure treatment and a projection optical system of an exposure apparatus for carrying out the exposure treatment, prior to providing a resist film on a first main face of the processing target substrate that is provided for liquid immersion exposure for carrying out the exposure treatment at a side to be applied with the exposure treatment, selectively applying at least hydrophobic treatment with respect to a region in a predetermined range from a peripheral rim part of a second main face opposite to the first main face.
摘要翻译： 一种基板处理方法，包括在将待施加曝光处理的处理对象基板和用于进行曝光处理的曝光装置的投影光学系统之间提供液体之前，在将抗蚀剂膜提供在第一主面 为了进行曝光处理的一侧进行曝光处理而设置的液浸曝光处理对象基板，从第二图像的外围边缘部选择性地施加相对于规定范围的区域的至少疏水处理 主面与第一主面相对。
-
3.发明申请SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS 审中-公开用于形成电阻图案的半导体器件制造方法和基板处理装置公开(公告)号：US20110229826A1
公开(公告)日：2011-09-22
申请号：US13118779
申请日：2011-05-31
申请人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke KAWAMURA , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。
-
公开(公告)号：US07968272B2
公开(公告)日：2011-06-28
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03C5/04
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。
-
5.发明申请Semiconductor device manufacturing method to form resist pattern, and substrate processing apparatus 失效形成抗蚀剂图案的半导体器件制造方法以及基板处理装置公开(公告)号：US20070128554A1
公开(公告)日：2007-06-07
申请号：US11600198
申请日：2006-11-16
申请人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
发明人： Daisuke Kawamura , Eishi Shiobara , Tomoyuki Takeishi , Kei Hayasaki , Yasunobu Onishi , Shinichi Ito , Tatsuhiko Higashiki
IPC分类号： G03F7/20
CPC分类号： G03F7/70925 , G03F7/70341
摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.
摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。
-
6.发明授权公开(公告)号：US07527918B2
公开(公告)日：2009-05-05
申请号：US10992349
申请日：2004-11-19
IPC分类号： G03F7/00
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。
-
7.发明申请公开(公告)号：US20050130068A1
公开(公告)日：2005-06-16
申请号：US10992349
申请日：2004-11-19
IPC分类号： G03F7/40 , G03F7/00 , G03F7/20 , H01L21/00 , H01L21/027
摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.
摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。
-
8.发明授权Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法公开(公告)号：US07399578B2
公开(公告)日：2008-07-15
申请号：US11493629
申请日：2006-07-27
IPC分类号： G03F7/32
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译： 一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。
-
9.发明申请Alkaline solution and manufacturing method, and alkaline solution applied to pattern forming method, resist film removing method, solution application method, substrate treatment method, solution supply method, and semiconductor device manufacturing method 失效碱溶液及其制造方法，碱性溶液应用于图案形成方法，抗蚀膜除去方法，溶液施加方法，基板处理方法，溶液供给方法和半导体器件制造方法公开(公告)号：US20070037099A1
公开(公告)日：2007-02-15
申请号：US11493629
申请日：2006-07-27
IPC分类号： G03C5/00
CPC分类号： H01L21/31133 , G03F7/3021 , G03F7/322 , G03F7/422 , G03F7/425
摘要： A manufacturing method of an alkaline solution, comprising dissolving a gaseous molecule having oxidizing properties or reducing properties in an aqueous alkaline solution.
摘要翻译： 一种碱性溶液的制造方法，包括将具有氧化性质或还原性的气态分子溶解在碱性水溶液中。
-
公开(公告)号：US07364839B2
公开(公告)日：2008-04-29
申请号：US10624593
申请日：2003-07-23
申请人： Kei Hayasaki , Shinichi Ito , Tomoyuki Takeishi , Kenji Kawano , Tatsuhiko Ema
发明人： Kei Hayasaki , Shinichi Ito , Tomoyuki Takeishi , Kenji Kawano , Tatsuhiko Ema
IPC分类号： G03F7/26
CPC分类号： G03F7/40
摘要： A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.
摘要翻译： 图案形成方法包括在基板上形成感光性树脂膜，使感光性树脂膜曝光，通过向感光性树脂膜供给显影液而形成感光性树脂膜的图案，通过使感光性树脂膜变薄，从而除去图案的表面层 导致图案与活性水接触。
-
-
-
-
-
-
-
-
-
搜索结果
29 条记录 (耗时 0.035 秒)
