公开(公告)号：US09337121B2

公开(公告)日：2016-05-10

申请号：US14324724

申请日：2014-07-07

Applicant: Electronics and Telecommunications Research Institute

Inventor： Chi Hoon Jun ,  Sang Choon Ko ,  Seok-Hwan Moon ,  Woojin Chang ,  Sung-Bum Bae ,  Young Rak Park ,  Je Ho Na ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L23/367 ,  H01L21/308 ,  H01L23/473 ,  H01L23/467 ,  H01L21/3065 ,  H01L21/3205

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/467 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括：设置在衬底上的有源区; 入口通道形成为隐藏在所述基板的一侧中的单个腔; 出口通道形成为埋在基板的另一侧中的单个腔; 微通道阵列，其包括多个微通道，其中所述多个微通道形成为埋在所述衬底中的多个空腔，并且所述微通道阵列的一端连接到所述入口通道的一侧，而另一端 的微通道阵列连接到出口通道的一侧; 以及将微通道彼此分离的微型散热器阵列。

公开(公告)号：US10020201B2

公开(公告)日：2018-07-10

申请号：US15093814

申请日：2016-04-08

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chi Hoon Jun ,  Sang Choon Ko ,  Seok-Hwan Moon ,  Woojin Chang ,  Sung-Bum Bae ,  Young Rak Park ,  Je Ho Na ,  Jae Kyoung Mun ,  Eun Soo Nam

IPC: H01L23/367 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3205 ,  H01L23/473 ,  H01L23/467

CPC classification number: H01L21/3065 ,  H01L21/3081 ,  H01L21/32051 ,  H01L23/367 ,  H01L23/467 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.

公开(公告)号：US09159583B2

公开(公告)日：2015-10-13

申请号：US14310784

申请日：2014-06-20

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Choon Ko ,  Jae Kyoung Mun ,  Woojin Chang ,  Sung-Bum Bae ,  Young Rak Park ,  Chi Hoon Jun ,  Seok-Hwan Moon ,  Woo-Young Jang ,  Jeong-Jin Kim ,  Hyungyu Jang ,  Je Ho Na ,  Eun Soo Nam

IPC: H01L21/33 ,  H01L21/321 ,  H01L21/02 ,  H01L21/283

CPC classification number: H01L21/3212 ,  H01L21/0254 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Abstract translation: 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。