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公开(公告)号：US11488841B2
公开(公告)日：2022-11-01
申请号：US16795009
申请日：2020-02-19
发明人： Yong Sung Eom , Kwang-Seong Choi , Ki Seok Jang , Seok-Hwan Moon , Jiho Joo
摘要： Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.
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公开(公告)号：US20140159547A1
公开(公告)日：2014-06-12
申请号：US13864341
申请日：2013-04-17
发明人： Chi Hoon JUN , Sang Choon Ko , Seok-Hwan Moon , Kwang-Seong Choi
IPC分类号： H02N2/18
CPC分类号： H01L41/1136 , H02N2/186
摘要： The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
摘要翻译： 本发明构思公开了一种冲击式压电微型发电机。 冲击型压电微型发电机可以包括具有空腔的基座和与空腔相邻的至少一个止动区域; 固定在基座上的框架; 振动体，包括从所述框架朝向所述空腔的顶部延伸的多个第一振动梁，连接到所述多个第一振动梁的第一末端之间并延伸到所述停止区域上的冲击梁，以及从所述第二振动梁延伸的第二振动梁 所述冲击梁到达所述多个第一振动梁之间，所述第二振动梁具有第二尖端; 以及设置在所述第二振动梁和所述冲击梁的顶部和底部中的一个上的压电装置，所述压电装置根据所述振动体对所述停止区域的冲击产生电力，并且所述冲击梁和所述第二振动 光束。
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公开(公告)号：US09337121B2
公开(公告)日：2016-05-10
申请号：US14324724
申请日：2014-07-07
发明人： Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Woojin Chang , Sung-Bum Bae , Young Rak Park , Je Ho Na , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L23/367 , H01L21/308 , H01L23/473 , H01L23/467 , H01L21/3065 , H01L21/3205
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/32051 , H01L23/367 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括：设置在衬底上的有源区; 入口通道形成为隐藏在所述基板的一侧中的单个腔; 出口通道形成为埋在基板的另一侧中的单个腔; 微通道阵列，其包括多个微通道，其中所述多个微通道形成为埋在所述衬底中的多个空腔，并且所述微通道阵列的一端连接到所述入口通道的一侧，而另一端 的微通道阵列连接到出口通道的一侧; 以及将微通道彼此分离的微型散热器阵列。
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公开(公告)号：US09024511B2
公开(公告)日：2015-05-05
申请号：US13864341
申请日：2013-04-17
发明人： Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Kwang-Seong Choi
IPC分类号： H01L41/09 , H01L41/113
CPC分类号： H01L41/1136 , H02N2/186
摘要： The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.
摘要翻译： 本发明构思公开了一种冲击式压电微型发电机。 冲击型压电微型发电机可以包括具有空腔的基座和与空腔相邻的至少一个止动区域; 固定在基座上的框架; 振动体，包括从所述框架朝向所述空腔的顶部延伸的多个第一振动梁，连接到所述多个第一振动梁的第一末端之间并延伸到所述停止区域上的冲击梁，以及从所述第二振动梁延伸的第二振动梁 所述冲击梁到达所述多个第一振动梁之间，所述第二振动梁具有第二尖端; 以及设置在所述第二振动梁和所述冲击梁的顶部和底部中的一个上的压电装置，所述压电装置根据所述振动体对所述停止区域的冲击产生电力，并且所述冲击梁和所述第二振动 光束。
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5.发明申请ACTIVE CLICHE FOR LARGE-AREA PRINTING, MANUFACTURING METHOD OF THE SAME, AND PRINTING METHOD USING THE SAME 有权用于大面积打印的主动夹层及其制造方法及使用其的印刷方法公开(公告)号：US20140063124A1
公开(公告)日：2014-03-06
申请号：US13966336
申请日：2013-08-14
发明人： Yong Suk Yang , In-Kyu You , Soon-Won Jung , Bock Soon Na , Seok-Hwan Moon
CPC分类号： B41J2/1626 , B41J2/06 , B41J2/14 , B41J2/16 , B41J2/162 , B41J2/1621 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1646 , B41J2202/04
摘要： Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes.
摘要翻译： 提供了一种大面积纳米级活性印刷装置及其制造方法，以及使用其的印刷方法。 打印装置可以包括基板，沿着第一方向延伸的第一互连线，在基板上，设置在第一互连线上的具有部分地暴露第一互连线的孔的层间电介质层，邻近孔的第二互连线 所述层间电介质层与所述第一互连线交叉，以及设置在与所述第一和第二互连线交叉并与所述第一互连线连接的楔形电极。 楔形电极在孔的中心向上突出。
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公开(公告)号：US20140062838A1
公开(公告)日：2014-03-06
申请号：US13946514
申请日：2013-07-19
发明人： In-Kyu YOU , Seok-Hwan Moon , Yong-Suk Yang , Soon-Won Jung
IPC分类号： G06F3/14
CPC分类号： G06F3/1423 , G06F1/1626 , G06F1/1632 , G06F1/1652 , G06F3/147 , G09G2380/02 , G09G2380/14
摘要： Provided is a mobile e-binder system including at least one display configured to display data, a docking system electrically connected to the at least one display to exchange the data using a standardized communication protocol, and a computing device configured to store and process the data and send the data to the at least one display. The at least one display may be configured to be attachable and detachable to the docking system.
摘要翻译： 提供了一种移动电子绑定系统，其包括被配置为显示数据的至少一个显示器，电连接到所述至少一个显示器的对接系统，以使用标准化通信协议来交换数据;以及计算设备，被配置为存储和处理数据 并将数据发送到至少一个显示器。 所述至少一个显示器可以被配置为可附接和可拆卸到对接系统。
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公开(公告)号：US11107790B2
公开(公告)日：2021-08-31
申请号：US16555060
申请日：2019-08-29
IPC分类号： H01L23/00
摘要： A laser bonding method includes forming a bonding part including an adhesive layer and a conductive particle disposed within the adhesive layer on a substrate; aligning a bonding target by disposing the bonding target on a surface of the bonding part opposite the substrate; disposing a pressing part on a surface of the bonding target that is opposite to the bonding part and pressing the bonding target onto the bonding part through the pressing part; heating the bonding target by irradiating at least the pressing part with a laser and conducting heat from the pressing part to the bonding target and from the bonding target to the bonding part; and bonding together the bonding part and the bonding target by the heat conducted from the bonding target to the bonding part so that the conductive particle electrically connects the substrate and the bonding target. The pressing part may be removed.
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公开(公告)号：US10020201B2
公开(公告)日：2018-07-10
申请号：US15093814
申请日：2016-04-08
发明人： Chi Hoon Jun , Sang Choon Ko , Seok-Hwan Moon , Woojin Chang , Sung-Bum Bae , Young Rak Park , Je Ho Na , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L23/367 , H01L21/3065 , H01L21/308 , H01L21/3205 , H01L23/473 , H01L23/467
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/32051 , H01L23/367 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
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公开(公告)号：US09159583B2
公开(公告)日：2015-10-13
申请号：US14310784
申请日：2014-06-20
发明人： Sang Choon Ko , Jae Kyoung Mun , Woojin Chang , Sung-Bum Bae , Young Rak Park , Chi Hoon Jun , Seok-Hwan Moon , Woo-Young Jang , Jeong-Jin Kim , Hyungyu Jang , Je Ho Na , Eun Soo Nam
IPC分类号： H01L21/33 , H01L21/321 , H01L21/02 , H01L21/283
CPC分类号： H01L21/3212 , H01L21/0254 , H01L21/283 , H01L21/28575 , H01L21/28581 , H01L29/2003 , H01L29/41766 , H01L29/452 , H01L29/66462 , H01L29/7786
摘要： Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
摘要翻译： 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。
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10.发明授权公开(公告)号：US09296205B2
公开(公告)日：2016-03-29
申请号：US14738047
申请日：2015-06-12
发明人： Yong Suk Yang , In-Kyu You , Soon-Won Jung , Bock Soon Na , Seok-Hwan Moon
CPC分类号： B41J2/1626 , B41J2/06 , B41J2/14 , B41J2/16 , B41J2/162 , B41J2/1621 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1646 , B41J2202/04
摘要： Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes.
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