DEVICE FOR MEASURING THERMOELECTRIC PERFORMANCE

    公开(公告)号:US20180106685A1

    公开(公告)日:2018-04-19

    申请号:US15708297

    申请日:2017-09-19

    IPC分类号: G01K7/02 G01N25/32

    CPC分类号: G01K7/02 G01N25/32 H01L35/34

    摘要: The present disclosure herein relates to a device for measuring a thermoelectric performance. The device for measuring a thermoelectric performance of a thermoelectric material, which includes a support module configured to generate temperature difference between both ends of the thermoelectric material, a fixing module detachably coupled to the support module to support the thermoelectric material, a temperature measuring unit electrically connected to the fixing module to measure temperature of each of the both ends of the thermoelectric material, and an electromotive force measuring unit electrically connected to the fixing module to measure thermoelectromotive force generated between the both ends of the thermoelectric material. Here, the fixing module includes a first heat sink part and a second heat sink part, which respectively support the both ends of the thermoelectric material.

    THERMOELECTRIC ELEMENT AND THERMOELECTRIC MODULE

    公开(公告)号:US20170125659A1

    公开(公告)日:2017-05-04

    申请号:US15222601

    申请日:2016-07-28

    IPC分类号: H01L35/32 H01L35/04

    CPC分类号: H01L35/32 H01L35/04

    摘要: Provided is a thermoelectric element. The thermoelectric element includes an insulation substrate, a semiconductor layer on the insulation substrate, insulation layers disposed on the semiconductor layer and spaced apart from each other in a first direction parallel with a surface of the insulation substrate, metal thin films disposed on the insulation layers, and metal-semiconductor compound layers between the semiconductor layer and the second parts. Each of the metal thin films includes a first part overlapping the insulation layer and a second part extending from the first part in the first direction or in a direction opposite to the first direction to be connected to the semiconductor layer, and the second parts facing each other in the metal thin films adjacent to each other are spaced apart from each other.

    GAS SENSOR AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220128498A1

    公开(公告)日:2022-04-28

    申请号:US17506658

    申请日:2021-10-20

    IPC分类号: G01N25/30 B81B7/00 B81C1/00

    摘要: Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.

    THERMOELECTRIC DEVICE
    7.
    发明申请

    公开(公告)号:US20170133573A1

    公开(公告)日:2017-05-11

    申请号:US15346101

    申请日:2016-11-08

    IPC分类号: H01L35/32 H01L35/30

    CPC分类号: H01L35/32 H01L35/30

    摘要: Provided is a thermoelectric device. The thermoelectric device includes an upper substrate and a lower substrate, which face each other, and a thermoelectric conversion part disposed between the upper substrate and the lower substrate. The thermoelectric conversion part includes a first electrode disposed on the lower substrate, a second electrode spaced apart from the first electrode in a first direction on the lower substrate, a third electrode spaced apart from the first and second electrodes in a second direction perpendicular to the first direction on the lower substrate, a first thermoelectric member disposed between the first electrode and the third electrode and connected to the first electrode and the third electrode, and a second thermoelectric member disposed between the second electrode and the third electrode and connected to the second electrode and the third electrode. The lower substrate has a first lower opening that passes therethrough, and the first lower opening exposes the third electrode.

    DUAL-SIDE MICRO GAS SENSOR AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    DUAL-SIDE MICRO GAS SENSOR AND METHOD OF FABRICATING THE SAME 有权
    双面微气体传感器及其制造方法

    公开(公告)号:US20140175570A1

    公开(公告)日:2014-06-26

    申请号:US13909477

    申请日:2013-06-04

    IPC分类号: H01L29/66

    CPC分类号: G01N27/128 G01N27/123

    摘要: Provided are a dual-side micro gas sensor and a method of fabricating the same. The sensor may include an elastic layer, a heat-generating resistor layer on the elastic layer, an interlayered insulating layer on the heat-generating resistor layer, an upper sensing layer on the interlayered insulating layer, and a lower sensing layer provided below the elastic layer to face the heat-generating resistor layer, thereby reducing heat loss of the heat-generating resistor layer.

    摘要翻译: 提供双面微气体传感器及其制造方法。 传感器可以包括弹性层,弹性层上的发热电阻层,发热电阻层上的层间绝缘层,层间绝缘层上的上感测层,以及设置在弹性层下方的下感测层 面对发热电阻层,从而减少发热电阻层的热损失。

    POWER MANAGEMENT DEVICE AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20240241533A1

    公开(公告)日:2024-07-18

    申请号:US18412938

    申请日:2024-01-15

    摘要: A power management device includes a converter, a sampling circuit, an MPPT management circuit, and an MPPT control circuit. The converter converts a voltage across an output node of an energy source, based on a first control signal to output a final output voltage; The sampling circuit includes a sampling node measures a sampling voltage related to an open circuit voltage of the energy source, based on a second control signal. The MPPT management circuit generates the first control signal, based on the second control signal, the sampling voltage, and the voltage across the output node of the energy source. The MPPT control circuit controls a voltage level of the sampling voltage to be changed within a first threshold voltage range by applying a current to the sampling node, based on the second control signal and the sampling voltage.