公开(公告)号：US09063431B2

公开(公告)日：2015-06-23

申请号：US13810060

申请日：2011-07-15

Applicant: Jeffrey A. Barnes ,  Steven Lippy ,  Peng Zhang ,  Rekha Rajaram

Inventor： Jeffrey A. Barnes ,  Steven Lippy ,  Peng Zhang ,  Rekha Rajaram

IPC: G03F7/42 ,  C11D3/06 ,  C11D3/26 ,  C11D3/36 ,  H01L21/02

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。

公开(公告)号：US09546321B2

公开(公告)日：2017-01-17

申请号：US14368714

申请日：2012-12-27

Applicant: Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

Inventor： Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

IPC: H01B13/00 ,  C09K13/10 ,  H01L21/3213 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02 ,  H01L21/311

CPC classification number: C09K13/10 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D7/02 ,  C11D7/08 ,  C11D7/3209 ,  C11D11/0047 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract translation: 可用于相对于金属导电（例如钨）选择性去除氮化钛和/或光致抗蚀剂蚀刻残余材料的组合物，以及来自其上具有其的微电子器件的绝缘材料。 除去组合物含有至少一种氧化剂和一种蚀刻剂，可含有各种腐蚀抑制剂以确保选择性。

公开(公告)号：US20130296214A1

公开(公告)日：2013-11-07

申请号：US13810060

申请日：2011-07-15

Applicant: Jeffrey A. Barnes ,  Steven Lippy ,  Peng Zhang ,  Rekha Rajaram

Inventor： Jeffrey A. Barnes ,  Steven Lippy ,  Peng Zhang ,  Rekha Rajaram

IPC: G03F7/42

CPC classification number: C11D11/0041 ,  C11D3/042 ,  G03F7/42 ,  H01L21/02063 ,  H01L21/02071

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：US20140038420A1

公开(公告)日：2014-02-06

申请号：US13877777

申请日：2011-10-06

Applicant: Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

Inventor： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC: H01L21/8238 ,  H01L21/28

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

Abstract translation: 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地去除第一金属栅极材料（例如氮化钛）的去除组合物和工艺。 除去组合物可以包括氟化物或者基本上不含氟化物。 衬底优选地包括高k /金属栅极集成方案。

公开(公告)号：US09831088B2

公开(公告)日：2017-11-28

申请号：US13877777

申请日：2011-10-06

Applicant: Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

Inventor： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC: H01L21/461 ,  H01L21/28 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/8238

CPC classification number: H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

Abstract: A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：US20150027978A1

公开(公告)日：2015-01-29

申请号：US14368714

申请日：2012-12-27

Applicant: Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

Inventor： Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Li-Min Chen ,  Steven Lippy ,  Rekha Rajaram ,  Sheng-Hung Tu

IPC: C09K13/10 ,  C09K13/08 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  C09K13/00 ,  C09K13/06

CPC classification number: C09K13/10 ,  C09K13/00 ,  C09K13/06 ,  C09K13/08 ,  C11D7/02 ,  C11D7/08 ,  C11D7/3209 ,  C11D11/0047 ,  C23F1/02 ,  C23F1/30 ,  C23F1/40 ,  H01L21/02063 ,  H01L21/31144 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Abstract translation: 可用于相对于金属导电（例如钨）选择性去除氮化钛和/或光致抗蚀剂蚀刻残余材料的组合物，以及来自其上具有其的微电子器件的绝缘材料。 除去组合物含有至少一种氧化剂和一种蚀刻剂，可含有各种腐蚀抑制剂以确保选择性。