摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate support constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the substrate support includes parts that are made of an open cell plastic foam material.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate support constructed to hold a substrate, and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the substrate support includes parts that are made of an open cell plastic foam material.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a sensor configured to measure a height level, curvature and/or angle of a surface of a patterning device supported on the support.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. An applicator, such as a humidifier is provided to provide molecules, such as water molecules, to a clamp area of the patterning device.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; a projection system configured to project the patterned radiation beam onto a target portion of the substrate, and a sensor configured to measure a height level, curvature and/or angle of a surface of a patterning device supported on the support.
摘要:
A lithographic apparatus includes an illumination system configured to condition a radiation beam, a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, a substrate table constructed to hold a substrate, a projection system configured to project the patterned radiation beam onto a target portion of the substrate, a chuck configured to hold and position an object, for example, the patterning device onto the support or the substrate onto the substrate table, the chuck including a base and a constraining layer. A damping layer including a viscoelastic material is provided between the base and the constraining layer.
摘要:
An array of individually controllable elements for use in lithography in which each of the individually controllable elements is comprised of a planar reflector mounted on supports on a substrate by way of elongate hinges.
摘要:
A lithographic apparatus includes a support configured to support a patterning device, the patterning device configured to pattern a beam of radiation to form a patterned beam of radiation; a positioning device configured to move the support in a first direction; a measurement device configured to measure a relative position of the patterning device with respect to the support and to generate a measuring signal, the measurement device including a reference unit constructed and arranged to be coupled to the patterning device at a fixed relative position, and a position sensor configured to measure the position of the reference unit with respect to the support, wherein the positioning device is constructed and arranged to correct a position of the support based on the measuring signal.
摘要:
A device manufacturing method includes transferring a pattern from a patterning device onto a substrate. The method includes bringing the patterning device and the support together, and applying a substantially stationary force between the patterning device and the support to hold the patterning device. The patterning device is now excited by a substantially dynamic force to enable a micro slipping thereof. Then, the patterning device is aligned, and the pattern is transferred from the patterning device onto the substrate. The patterning device may be excited with an alternating acceleration. When the patterning device is excited, the patterning device is allowed to settle with respect to the support, thereby improving a friction therebetween to reduce a risk of slipping or local slipping of the patterning device.
摘要:
A support constructed to support a patterning object, the patterning object being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, is disclosed, wherein the support comprises a plurality of structures having a plurality of local contact areas, respectively, on which the patterning object is disposed, in use, and a clamp configured to clamp the patterning object to the plurality of contact areas, wherein each structure is configured so that a local shear stiffness of each local contact area is substantially balanced with a local friction limit at each local contact area, respectively.