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    Method of manufacturing a non-volatile memory device
    2.
    发明申请
    Method of manufacturing a non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US20070037328A1

    公开(公告)日：2007-02-15

    申请号：US11203087

    申请日：2005-08-15

    申请人： Chiahua Ho ,  Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    发明人： Chiahua Ho ,  Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L27/115 ,  H01L27/11568

    摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.

    摘要翻译： 一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。 低字线电阻由存储器件的主栅上的金属硅化物层形成。 在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

    Method of forming bottom oxide for nitride flash memory
    3.
    发明授权
    Method of forming bottom oxide for nitride flash memory 有权
    形成氮化物闪存底部氧化物的方法

    公开(公告)号：US08846549B2

    公开(公告)日：2014-09-30

    申请号：US11235786

    申请日：2005-09-27

    申请人： Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    发明人： Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC分类号： H01L21/31 ,  G11C16/04 ,  H01L21/28 ,  H01L29/51

    CPC分类号： H01L21/28282 ,  G11C16/0466 ,  H01L29/513

    摘要： A non-volatile memory device on a semiconductor substrate may include a bottom oxide layer over the substrate, a middle layer of silicon nitride over the bottom oxide layer, and a top oxide layer over the middle layer. The bottom oxide layer may have a hydrogen concentration of up to 5E19 cm−3 and an interface trap density of up to 5E11 cm−2 eV−1. The three-layer structure may be a charge-trapping structure for the memory device, and the memory device may further include a gate over the structure and source and drain regions in the substrate.

    摘要翻译： 半导体衬底上的非易失性存储器件可以包括衬底上的底部氧化物层，底部氧化物层上的中间氮化硅层和中间层上的顶部氧化物层。 底部氧化物层可以具有高达5E19cm-3的氢浓度和高达5E11cm-2eV-1的界面陷阱密度。 三层结构可以是用于存储器件的电荷捕获结构，并且存储器件还可以包括在结构上的栅极和衬底中的源极和漏极区域。

    Memory and manufacturing method thereof
    6.
    发明申请
    Memory and manufacturing method thereof 有权
    其记忆及其制造方法

    公开(公告)号：US20090057748A1

    公开(公告)日：2009-03-05

    申请号：US11892980

    申请日：2007-08-29

    申请人： Erh-Kun Lai ,  Hang-Ting Lue ,  Kuang-Yeu Hsieh

    发明人： Erh-Kun Lai ,  Hang-Ting Lue ,  Kuang-Yeu Hsieh

    IPC分类号： H01L29/788 ,  H01L21/8239

    CPC分类号： H01L29/792 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/115 ,  H01L27/11568 ,  H01L27/11578

    摘要： A memory and a manufacturing method thereof are provided. The memory includes a dielectric layer, a polysilicon layer, a first buried diffusion, a second buried diffusion, a charge storage structure and a gate. The polysilicon layer is disposed on the dielectric layer and electrically connected to at least a voltage. The first buried diffusion and the second buried diffusion are separately disposed in the surface of the polysilicon layer. The charge storage structure is disposed on the polysilicon layer and positioned between the first buried diffusion and the second buried diffusion. The gate is disposed on the charge storage structure.

    摘要翻译： 提供了一种存储器及其制造方法。 存储器包括电介质层，多晶硅层，第一掩埋扩散层，第二掩埋扩散层，电荷存储结构和栅极。 多晶硅层设置在电介质层上并电连接至少一个电压。 第一掩埋扩散部和第二掩埋扩散部分别设置在多晶硅层的表面。 电荷存储结构设置在多晶硅层上并且位于第一掩埋扩散区和第二掩埋扩散区之间。 栅极设置在电荷存储结构上。

    Method of manufacturing a non-volatile memory device
    7.
    发明授权
    Method of manufacturing a non-volatile memory device 有权
    制造非易失性存储器件的方法

    公开(公告)号：US07414282B2

    公开(公告)日：2008-08-19

    申请号：US11203087

    申请日：2005-08-15

    申请人： Chiahua Ho ,  Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    发明人： Chiahua Ho ,  Yen-Hao Shih ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC分类号： H01L29/76

    CPC分类号： H01L27/115 ,  H01L27/11568

    摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.

    摘要翻译： 一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。 低字线电阻由存储器件的主栅极上的金属硅化物层形成。 在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

    Asymmetric floating gate NAND flash memory
    8.
    发明授权
    Asymmetric floating gate NAND flash memory 有权
    非对称浮栅NAND闪存

    公开(公告)号：US07560762B2

    公开(公告)日：2009-07-14

    申请号：US11209437

    申请日：2005-08-23

    申请人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    发明人： Yen-Hao Shih ,  Chia-Hua Ho ,  Hang-Ting Lue ,  Erh-Kun Lai ,  Kuang Yeu Hsieh

    IPC分类号： H01L29/80

    CPC分类号： H01L27/115 ,  G11C16/0483 ,  H01L27/11521

    摘要： A NAND-type flash memory device includes asymmetric floating gates overlying respective wordlines. A given floating gate is sufficiently coupled to its respective wordline such that a large gate (i.e., wordline) bias voltage will couple the floating gate with a voltage which can invert the channel under the floating gate. The inversion channel under the floating gate can thus serve as the source/drain. As a result, the memory device does not need a shallow junction, or an assist-gate. In addition, the memory device exhibits relatively low floating gate-to-floating gate (FG-FG) interference.

    摘要翻译： NAND型闪存器件包括覆盖相应字线的非对称浮动栅极。 给定的浮动栅极被充分地耦合到其相应的字线，使得大的栅极（即，字线）偏置电压将使浮动栅极与可以反转浮动栅极下方的沟道的电压耦合。 因此，浮置栅极下的反相通道可以作为源极/漏极。 结果，存储器件不需要浅结或辅助栅。 此外，存储器件具有相对较低的浮置栅极至浮置栅极（FG-FG）干扰。