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公开(公告)号：US07897486B2
公开(公告)日：2011-03-01
申请号：US11801465
申请日：2007-05-09
申请人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
发明人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/10 , H01L24/13 , H01L24/81 , H01L2221/6834 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/1181 , H01L2224/13 , H01L2224/13099 , H01L2224/81011 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01077 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.
摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。
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公开(公告)号：US08193072B2
公开(公告)日：2012-06-05
申请号：US12938281
申请日：2010-11-02
申请人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
发明人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
IPC分类号： H01L21/78
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/10 , H01L24/13 , H01L24/81 , H01L2221/6834 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/1181 , H01L2224/13 , H01L2224/13099 , H01L2224/81011 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01077 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.
摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。
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公开(公告)号：US20110059596A1
公开(公告)日：2011-03-10
申请号：US12938281
申请日：2010-11-02
申请人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
发明人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
IPC分类号： H01L21/78
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/10 , H01L24/13 , H01L24/81 , H01L2221/6834 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/1181 , H01L2224/13 , H01L2224/13099 , H01L2224/81011 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01077 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.
摘要翻译： 公开了用于形成晶片涂层的制剂和方法。 在一个实施方案中，在激光划线操作之前，将有机表面保护剂并入沉积到半导体晶片上的晶片涂层制剂中。 在去除晶片涂层时，有机表面保护剂保留在凸块上，从而防止芯片准备和芯片之间的凸起的氧化附着。 在替代实施例中，将紫外光吸收剂添加到晶片涂层配方中以增强晶片涂层的能量吸收，从而提高激光器烧蚀晶片涂层的能力。 在替代实施例中，保形晶片涂层沉积在晶片和模具凸起上，从而减少可能影响激光划线能力的晶片涂层厚度变化。
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公开(公告)号：US07279362B2
公开(公告)日：2007-10-09
申请号：US11097424
申请日：2005-03-31
申请人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
发明人： Eric J. Li , Daoqiang Lu , Christopher L. Rumer , Paul A. Koning , Darcy E. Fleming , Gudbjorg H. Oskarsdottir , Tiffany Byrne
IPC分类号： H01L21/00
CPC分类号： H01L21/6835 , H01L21/78 , H01L24/10 , H01L24/13 , H01L24/81 , H01L2221/6834 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/1181 , H01L2224/13 , H01L2224/13099 , H01L2224/81011 , H01L2224/8121 , H01L2224/81815 , H01L2224/83102 , H01L2224/92125 , H01L2924/00014 , H01L2924/01019 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01077 , H01L2924/014 , H01L2924/14 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： Formulations and processes for forming wafer coat layers are disclosed. In one embodiment, an organic surface protectant is incorporated into a wafer coat formulation deposited onto a semiconductor wafer prior to the laser scribe operation. Upon removal of the wafer coat layer, the organic surface protectant remains on the bumps and thereby prevents oxidation of the bumps between die prep and chip and attach. In an alternative embodiment, an ultraviolet light absorber is added to the wafer coat formulation to enhance the wafer coat layer's energy absorption and thereby improve the laser's ability to ablate the wafer coat layer. In an alternative embodiment, a conformal wafer coat layer is deposited on the wafer and die bumps, thereby reducing wafer coat layer thickness variations that can impact the laser scribing ability.
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公开(公告)号：US07205595B2
公开(公告)日：2007-04-17
申请号：US10816259
申请日：2004-03-31
IPC分类号： H01L29/76 , H01L21/8242
CPC分类号： G11C11/22 , B82Y10/00 , H01L27/101 , H01L27/11502
摘要： An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess holes in the metal nitride and/or metal oxide trap electrons injected by the metal electrodes under AC bias that would otherwise damage the polymer ferroelectric layer.
摘要翻译： 本发明的一个实施例通过在金属电极和聚合物铁电层之间的绝缘金属氮化物和/或金属氧化物层中产生过量的空穴来减少对聚合物铁电体存储器件中的聚合物铁电层的损害。 金属氮化物和/或金属氧化物中的多余的阱捕获在AC偏压下由金属电极注入的电子，否则会损坏聚合物铁电层。
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公开(公告)号：US07446360B2
公开(公告)日：2008-11-04
申请号：US10914862
申请日：2004-08-09
CPC分类号： G11C11/22 , B82Y10/00 , Y10T428/3154 , Y10T428/31544 , Y10T428/31699
摘要： According to one aspect of the invention, a polymer device and a method of constructing a polymer device are provided. The polymer device includes a first conductor, a second conductor, and a polymeric body between the first and second conductors. The polymeric body includes a polymer material and a phyllosilicate material.
摘要翻译： 根据本发明的一个方面，提供了一种聚合物装置和一种构建聚合物装置的方法。 聚合物装置包括第一导体，第二导体和在第一和第二导体之间的聚合体。 聚合物主体包括聚合物材料和页硅酸盐材料。
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公开(公告)号：US06974726B2
公开(公告)日：2005-12-13
申请号：US10748446
申请日：2003-12-30
申请人： Ashay A. Dani , Gudbjorg H. Oskarsdottir , Chris Matayabas, Jr. , Sujit Sharan , Chris L. Rumer , Beverly J. Canham
发明人： Ashay A. Dani , Gudbjorg H. Oskarsdottir , Chris Matayabas, Jr. , Sujit Sharan , Chris L. Rumer , Beverly J. Canham
IPC分类号： H01L21/44 , H01L21/78 , H01L23/544
CPC分类号： H01L21/78 , H01L2224/16 , H01L2924/01019 , H01L2924/10253 , H01L2924/00
摘要： A silicon wafer has a plurality of integrated circuits terminated on a surface of the silicon wafer. The silicon wafer has a soluble protective coat on the surface of the silicon wafer. The coated silicon wafer may be processed by laser scribing. A solvent wash may be used to remove the soluble protective coat and debris from laser scribing. The coated silicon wafer may be saw cut after laser scribing. A flow of solvent may be provided during the saw cutting. The flow of solvent may be sufficient to remove at least a substantial portion of the soluble protective coat.
摘要翻译： 硅晶片具有端接在硅晶片表面上的多个集成电路。 硅晶片在硅晶片的表面上具有可溶的保护涂层。 涂覆的硅晶片可以通过激光划线来加工。 可以使用溶剂洗涤剂从激光划线中除去可溶性保护涂层和碎屑。 涂覆的硅晶片可以在激光划线之后锯切。 在锯切期间可以提供溶剂流。 溶剂的流动可能足以除去至少大部分的可溶性保护涂层。
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公开(公告)号：US07179689B2
公开(公告)日：2007-02-20
申请号：US11282255
申请日：2005-11-18
CPC分类号： H01L23/3128 , H01L23/3135 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Numerous embodiments of an apparatus and method to stress and warpage of semiconductor packages are described. In one embodiment, a semiconductor die is disposed above a substrate. An encapsulating material is disposed above the substrate and semiconductor die, in which the encapsulating material has a combination of a low coefficient of thermal expansion material and a high coefficient of thermal expansion material.
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公开(公告)号：US07170188B2
公开(公告)日：2007-01-30
申请号：US10882783
申请日：2004-06-30
IPC分类号： H01L23/28
CPC分类号： H01L23/3128 , H01L23/3135 , H01L24/48 , H01L24/73 , H01L24/81 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/81801 , H01L2224/82 , H01L2224/85 , H01L2224/86 , H01L2924/00014 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Numerous embodiments of an apparatus and method to stress and warpage of semiconductor packages are described. In one embodiment, a semiconductor die is disposed above a substrate. An encapsulating material is disposed above the substrate and semiconductor die, in which the encapsulating material has a combination of a low coefficient of thermal expansion material and a high coefficient of thermal expansion material.
摘要翻译： 描述了半导体封装的应力和翘曲的装置和方法的许多实施例。 在一个实施例中，半导体管芯设置在衬底之上。 封装材料设置在基板和半导体管芯上方，其中封装材料具有低热膨胀系数和高热膨胀系数的组合。
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