公开(公告)号：US20150255415A1

公开(公告)日：2015-09-10

申请号：US14198479

申请日：2014-03-05

申请人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas, JR. ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

发明人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas, JR. ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L21/768

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/76802 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13023 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/37001 ,  H01L2924/00

摘要： An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

摘要翻译： 描述了一种包括设置在基板上的基板和模具化合物的装置。 半导体管芯被嵌入在模具化合物内并且电耦合到衬底上的焊盘。 焊球围绕半导体管芯设置在基板上。 每个焊球上都有一个固体涂层。 固体涂层含有一种清洁剂，以促进其焊球与另一种焊球的聚结。 在模具化合物中形成了暴露焊球及其各自固体涂层的通孔。 在组合或替代实施例中，模具化合物的外边缘具有比通孔和半导体管芯之间的模具化合物区域更小的厚度。 在组合或替代实施例中，焊料球与模具化合物之间存在微通道。

公开(公告)号：US20140175160A1

公开(公告)日：2014-06-26

申请号：US13725279

申请日：2012-12-21

申请人： Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Martha A. Dudek

发明人： Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Martha A. Dudek

IPC分类号： B23K1/20 ,  B23K35/24 ,  B23K35/362

CPC分类号： B23K1/203 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/24 ,  B23K35/26 ,  B23K35/262 ,  B23K35/36 ,  B23K35/3612 ,  B23K35/3613 ,  B23K35/3615 ,  B23K35/3618 ,  B23K35/362 ,  B23K2101/42

摘要： A composition including a solder flux including a rosin material have a property to maintain a less than 10 percent drop in tackiness from an initial tackiness value of 20 gf to 120 gf over a temperature regime of 20° C. to 200° C. A composition including a solder powder; and a solder flux including a rosin material including a softening temperature of 150° C. to 200° C. and a molecular weight of 300 g/mol to 600 g/mol. A method including introducing a solder paste to one or more contact pads of a substrate, the solder paste including a solder powder and a solder flux including a rosin material including a softening temperature of 150° C. to 190° C. and a molecular weight of 300 g/mol to 600 g/mol; contacting the solder paste with a solder ball of a package substrate; and heating the solder paste.

摘要翻译： 包含包含松香材料的焊剂的组合物具有在20℃至200℃的温度范围内保持从20gf的初始粘性值至少低于10％的粘性降低的性质。组合物 包括焊粉; 以及包含软化温度为150℃〜200℃，分子量为300g / mol〜600g / mol的松香材料的焊剂。 一种方法，包括将焊膏引入到衬底的一个或多个接触焊盘中，所述焊膏包括焊料粉末和包含松香材料的助焊剂，所述助焊剂包括150℃至190℃的软化温度和分子量 为300g / mol至600g / mol; 使焊膏与封装衬底的焊球接触; 并加热焊膏。

公开(公告)号：US07553702B2

公开(公告)日：2009-06-30

申请号：US11746862

申请日：2007-05-10

申请人： Thomas J Fitzgerald ,  Mukul P Renavikar ,  Susheel G Jadhav

发明人： Thomas J Fitzgerald ,  Mukul P Renavikar ,  Susheel G Jadhav

IPC分类号： H01L21/00 ,  H01L21/20

CPC分类号： H01L23/04 ,  H01L21/563 ,  H01L23/42 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/8381 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0101 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/0401

摘要： An integrated heat spreader and die coupled with solder are disclosed herein. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.

摘要翻译： 本文公开了与焊料耦合的集成散热器和管芯。 散热器可以具有焊料储存器。 此外，散热器和管芯可以在回流过程中耦合，其中围绕集成散热器和管芯的气体压力变化。

公开(公告)号：US07205595B2

公开(公告)日：2007-04-17

申请号：US10816259

申请日：2004-03-31

申请人： Mukul P. Renavikar ,  Gudbjorg H. Oskarsdottir

发明人： Mukul P. Renavikar ,  Gudbjorg H. Oskarsdottir

IPC分类号： H01L29/76 ,  H01L21/8242

CPC分类号： G11C11/22 ,  B82Y10/00 ,  H01L27/101 ,  H01L27/11502

摘要： An embodiment of the invention reduces damage caused to a polymer ferroelectric layer in a polymer ferroelectric memory device by creating excess holes in the insulating metal nitride and/or metal oxide layers between the metal electrodes and polymer ferroelectric layer. The excess holes in the metal nitride and/or metal oxide trap electrons injected by the metal electrodes under AC bias that would otherwise damage the polymer ferroelectric layer.

摘要翻译： 本发明的一个实施例通过在金属电极和聚合物铁电层之间的绝缘金属氮化物和/或金属氧化物层中产生过量的空穴来减少对聚合物铁电体存储器件中的聚合物铁电层的损害。 金属氮化物和/或金属氧化物中的多余的阱捕获在AC偏压下由金属电极注入的电子，否则会损坏聚合物铁电层。

公开(公告)号：US07239517B2

公开(公告)日：2007-07-03

申请号：US11105061

申请日：2005-04-11

申请人： Thomas J. Fitzgerald ,  Mukul P. Renavikar ,  Susheel G. Jadhav

发明人： Thomas J. Fitzgerald ,  Mukul P. Renavikar ,  Susheel G. Jadhav

IPC分类号： H05K7/20

CPC分类号： H01L23/04 ,  H01L21/563 ,  H01L23/42 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32503 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83051 ,  H01L2224/83385 ,  H01L2224/8381 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/0101 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/1616 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/0401

摘要： Integrated heat spreader and die coupled with solder. The heat spreader may have solder reservoirs. Additionally, the heat spreader and die may be coupled during a reflow process where the gaseous pressure surrounding the integrated heat spreader and the die is varied.

摘要翻译： 集成散热器和管芯焊接。 散热器可以具有焊料储存器。 此外，散热器和管芯可以在回流过程中耦合，其中围绕集成散热器和管芯的气体压力变化。

公开(公告)号：US09613933B2

公开(公告)日：2017-04-04

申请号：US14198479

申请日：2014-03-05

申请人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas, Jr. ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

发明人： Thomas J. De Bonis ,  Lilia May ,  Rajen S. Sidhu ,  Mukul P. Renavikar ,  Ashay A. Dani ,  Edward R. Prack ,  Carl L. Deppisch ,  Anna M. Prakash ,  James C. Matayabas, Jr. ,  Jason Jieping Zhang ,  Srinivasa R. Aravamudhan ,  Chang Lin

IPC分类号： H01L23/12 ,  H01L25/065 ,  H01L25/10 ,  H01L23/31 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/76802 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/13023 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/37001 ,  H01L2924/00

摘要： An apparatus is described that includes a substrate and a mold compound disposed on the substrate. The semiconductor die is embedded within the mold compound and is electrically coupled to lands on the substrate. Solder balls are disposed around the semiconductor die on the substrate. Each of the solder balls have a solid coating thereon. The solid coating contains a cleaning agent to promote its solder ball's coalescence with another solder ball. Respective vias are formed in the mold compound that expose the solder balls and their respective solid coatings. In combined or alternate embodiments outer edges of the mold compound have smaller thickness than regions of the mold compound between the vias and the semiconductor die. In combined or alternate embodiments micro-channels exist between the solder balls and the mold compound.

公开(公告)号：US20140268534A1

公开(公告)日：2014-09-18

申请号：US13795042

申请日：2013-03-12

申请人： Rajen S. Sidhu ,  Mukul P. Renavikar ,  Sandeep B. Sane

发明人： Rajen S. Sidhu ,  Mukul P. Renavikar ,  Sandeep B. Sane

IPC分类号： H05K1/09 ,  C25D3/58 ,  H05K3/10

CPC分类号： C25D3/58 ,  C23C18/48 ,  C25D5/02 ,  H05K3/421 ,  H05K3/4644

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include forming an opening in a dielectric material of a package substrate, and then plating a conductive interconnect structure in the opening utilizing a plating process. The plating process may comprises a conductive metal and a dopant comprising between about 0.05 and 10 percent weight, wherein the dopant comprises at least one of magnesium, zirconium and zinc.

摘要翻译： 描述了形成微电子封装结构的方法及由此形成的相关结构。 这些方法和结构可以包括在封装衬底的电介质材料中形成开口，然后使用电镀工艺在开口中镀覆导电互连结构。 电镀工艺可以包括导电金属和掺杂剂，其包含约0.05至10重量％的重量，其中掺杂剂包括镁，锆和锌中的至少一种。

公开(公告)号：US07183641B2

公开(公告)日：2007-02-27

申请号：US11094893

申请日：2005-03-30

申请人： Mukul P. Renavikar ,  Susheel G. Jadhav

发明人： Mukul P. Renavikar ,  Susheel G. Jadhav

IPC分类号： H01L23/34

CPC分类号： H01L23/42 ,  H01L21/563 ,  H01L23/4827 ,  H01L24/32 ,  H01L2224/16225 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32507 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01028 ,  H01L2924/01083 ,  H01L2924/0665 ,  H01L2224/0401

摘要： Integrated heat spreader and die coupled with solder in a manner forming an intermetallic compound having a higher liquidus temperature than the liquidus temperature of the solder used to create the intermetallic compound are described herein.

摘要翻译： 本文描述了以形成具有比用于产生金属间化合物的焊料的液相线温度高的液相线温度的金属间化合物的方式与焊料结合的集成散热器和管芯。

公开(公告)号：US07087521B2

公开(公告)日：2006-08-08

申请号：US10993609

申请日：2004-11-19

申请人： Mukul P. Renavikar ,  John P. Barnak

发明人： Mukul P. Renavikar ,  John P. Barnak

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05147 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05671 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H05K3/244 ,  H01L2924/00014

摘要： Methods of forming a microelectronic structure are described. Those methods include forming a first adhesion layer on a conductive layer, forming an intermediate layer on the first adhesion layer, and forming a barrier layer on the intermediate layer, wherein the intermediate layer includes a coefficient of thermal expansion that is approximately between the coefficient of thermal expansion of the first adhesion layer and the coefficient of thermal expansion of the barrier layer.

摘要翻译： 描述形成微电子结构的方法。 这些方法包括在导电层上形成第一粘合层，在第一粘合层上形成中间层，并在中间层上形成阻挡层，其中中间层包括约为 第一粘合层的热膨胀和阻挡层的热膨胀系数。

公开(公告)号：US08701281B2

公开(公告)日：2014-04-22

申请号：US12641237

申请日：2009-12-17

申请人： Rajen S. Sidhu ,  Ashay A. Dani ,  Mukul P. Renavikar

发明人： Rajen S. Sidhu ,  Ashay A. Dani ,  Mukul P. Renavikar

IPC分类号： H05K3/00 ,  H05K3/34 ,  H05K1/03 ,  H05K1/00 ,  H05K1/16 ,  H05K7/10

CPC分类号： H05K3/3489 ,  H05K3/3436

摘要： Surface-active dopants are added to a portion of a circuit package before a reflow process to promote wetting and reduce the formation of solder bump bridges. The circuit package has a solder element that electrically connects the circuit package to a substrate. A reflow process is performed to attach the solder element to a pad on the circuit package. During the reflow process, the surface-active dopants diffuse to the surface of the solder element and form an oxide passivation layer on the surface of the solder element.

摘要翻译： 在回流过程之前，将表面活性掺杂剂添加到电路封装的一部分中以促进润湿并减少焊料凸块桥的形成。 电路封装具有将电路封装电连接到衬底的焊料元件。 执行回流处理以将焊料元件附接到电路封装上的焊盘。 在回流过程中，表面活性掺杂剂扩散到焊料元件的表面，并在焊料元件的表面上形成氧化物钝化层。