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    Methods of forming integrated circuitry
    1.
    发明申请
    Methods of forming integrated circuitry 审中-公开
    形成集成电路的方法

    公开(公告)号：US20080233700A1

    公开(公告)日：2008-09-25

    申请号：US11724784

    申请日：2007-03-15

    申请人： Eric R. Blomiley ,  Joel A. Drewes ,  D.V. Nirmal Ramaswamy

    发明人： Eric R. Blomiley ,  Joel A. Drewes ,  D.V. Nirmal Ramaswamy

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823425 ,  H01L21/823481 ,  H01L27/10873 ,  H01L27/1203

    摘要： The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having the filled cavities therein can be utilized as a semiconductor-on-insulator-type structure, and transistor devices can be formed to be supported by the semiconductor material and to be over the cavities. In some aspects, the transistor devices have channel regions over the filled cavities, and in other aspects the transistor devices have source/drain regions over the filled cavities. The transistor devices can be incorporated into dynamic random access memory, and can be utilized in electronic systems.

    摘要翻译： 本发明包括半导体处理方法，其中形成开口以延伸到半导体衬底中，然后将衬底围绕开口退火以形成空腔。 蚀刻衬底以暴露空腔，并且空腔基本上用绝缘材料填充。 其中具有填充空穴的半导体衬底可以用作绝缘体上半导体型结构，并且晶体管器件可以形成为被半导体材料支撑并且在空腔之上。 在一些方面，晶体管器件在填充腔体上具有沟道区域，在其它方面，晶体管器件在填充腔体上具有源极/漏极区域。 晶体管器件可以并入到动态随机存取存储器中，并且可以在电子系统中使用。

    Substrate susceptors for receiving semiconductor substrates to be deposited upon
    2.
    发明授权
    Substrate susceptors for receiving semiconductor substrates to be deposited upon 失效
    用于接收要沉积的半导体衬底的衬底感受体

    公开(公告)号：US07585371B2

    公开(公告)日：2009-09-08

    申请号：US10822093

    申请日：2004-04-08

    申请人： Eric R. Blomiley ,  Nirmal Ramaswamy ,  Ross S. Dando ,  Joel A. Drewes ,  Danny Dynka

    发明人： Eric R. Blomiley ,  Nirmal Ramaswamy ,  Ross S. Dando ,  Joel A. Drewes ,  Danny Dynka

    IPC分类号： C23C8/00 ,  C23C16/00

    CPC分类号： C23C16/481 ,  C23C14/505 ,  C23C14/541 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06

    摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

    摘要翻译： 在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底 接收侧，后侧和周缘。 在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。 这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。 考虑了其他方面和实现。

    Integrated circuitry, dynamic random access memory cells, electronic systems, and semiconductor processing methods
    3.
    发明申请
    Integrated circuitry, dynamic random access memory cells, electronic systems, and semiconductor processing methods 审中-公开
    集成电路，动态随机存取存储器单元，电子系统和半导体处理方法

    公开(公告)号：US20070020876A1

    公开(公告)日：2007-01-25

    申请号：US11185184

    申请日：2005-07-19

    申请人： Eric R. Blomiley ,  Joel A. Drewes ,  D. V. Nirmal Ramaswamy

    发明人： Eric R. Blomiley ,  Joel A. Drewes ,  D. V. Nirmal Ramaswamy

    IPC分类号： H01L21/76

    CPC分类号： H01L21/823425 ,  H01L21/823481 ,  H01L27/10873 ,  H01L27/1203

    摘要： The invention includes semiconductor processing methods in which openings are formed to extend into a semiconductor substrate, and the substrate is then annealed around the openings to form cavities. The substrate is etched to expose the cavities, and the cavities are substantially filled with insulative material. The semiconductor substrate having the filled cavities therein can be utilized as a semiconductor-on-insulator-type structure, and transistor devices can be formed to be supported by the semiconductor material and to be over the cavities. In some aspects, the transistor devices have channel regions over the filled cavities, and in other aspects the transistor devices have source/drain regions over the filled cavities. The transistor devices can be incorporated into dynamic random access memory, and can be utilized in electronic systems.

    摘要翻译： 本发明包括半导体处理方法，其中形成开口以延伸到半导体衬底中，然后将衬底围绕开口退火以形成空腔。 蚀刻衬底以暴露空腔，并且空腔基本上用绝缘材料填充。 其中具有填充空穴的半导体衬底可以用作绝缘体上半导体型结构，并且晶体管器件可以形成为被半导体材料支撑并且在空腔之上。 在一些方面，晶体管器件在填充腔体上具有沟道区域，在其它方面，晶体管器件在填充腔体上具有源极/漏极区域。 晶体管器件可以并入到动态随机存取存储器中，并且可以在电子系统中使用。

    Methods of forming titanium-containing materials
    5.
    发明授权
    Methods of forming titanium-containing materials 失效
    形成含钛材料的方法

    公开(公告)号：US07622388B2

    公开(公告)日：2009-11-24

    申请号：US12044253

    申请日：2008-03-07

    申请人： Jaydeb Goswami ,  Joel A. Drewes

    发明人： Jaydeb Goswami ,  Joel A. Drewes

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28562 ,  H01L21/28518 ,  H01L21/76855

    摘要： The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance, the invention can utilize alternating cycles of titanium tetrachloride and activated hydrogen to form titanium silicide on a surface of a silicon-containing substrate.

    摘要翻译： 本发明包括形成含钛材料的方法，例如硅化钛。 本发明可以使用卤化钛前体和一种或多种还原剂的交替循环来形成含钛材料。 例如，本发明可以利用四氯化钛和活性氢的交替循环在含硅基材的表面上形成硅化钛。

    Methods of Titanium Deposition
    6.
    发明申请
    Methods of Titanium Deposition 有权
    钛沉积方法

    公开(公告)号：US20080268633A1

    公开(公告)日：2008-10-30

    申请号：US11741113

    申请日：2007-04-27

    申请人： Joel A. Drewes ,  Cem Basceri ,  Demetrius Sarigiannis

    发明人： Joel A. Drewes ,  Cem Basceri ,  Demetrius Sarigiannis

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28562 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28518 ,  H01L21/76843 ,  Y10S438/913

    摘要： Some embodiments include methods of titanium deposition in which a silicon-containing surface and an electrically insulative surface are both exposed to titanium-containing material, and in which such exposure forms titanium suicide from the silicon-containing surface while not depositing titanium onto the electrically insulative surface. The embodiments may include atomic layer deposition processes, and may include a hydrogen pre-treatment of the silicon-containing surfaces to activate the surfaces for reaction with the titanium-containing material. Some embodiments include methods of titanium deposition in which a semiconductor material surface and an electrically insulative surface are both exposed to titanium-containing material, and in which a titanium-containing film is uniformly deposited across both surfaces.

    摘要翻译： 一些实施例包括钛沉积的方法，其中含硅表面和电绝缘表面都暴露于含钛材料，并且其中这种暴露从含硅表面形成硅化钛，而不将钛沉积在电绝缘 表面。 这些实施方案可以包括原子层沉积工艺，并且可以包括含氢表面的氢预处理以活化表面以与含钛材料反应。 一些实施例包括钛沉积的方法，其中半导体材料表面和电绝缘表面都暴露于含钛材料，并且其中含钛膜均匀地沉积在两个表面上。

    Semiconductor processing methods
    7.
    发明授权
    Semiconductor processing methods 有权
    半导体加工方法

    公开(公告)号：US07361596B2

    公开(公告)日：2008-04-22

    申请号：US11168856

    申请日：2005-06-28

    申请人： Jaydeb Goswami ,  Joel A. Drewes

    发明人： Jaydeb Goswami ,  Joel A. Drewes

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28562 ,  H01L21/28518 ,  H01L21/76855

    摘要： The invention includes methods of forming titanium-containing materials, such as, for example, titanium silicide. The invention can use alternating cycles of titanium halide precursor and one or more reductants to form the titanium-containing material. For instance, the invention can utilize alternating cycles of titanium tetrachloride and activated hydrogen to form titanium silicide on a surface of a silicon-containing substrate.

    摘要翻译： 本发明包括形成含钛材料的方法，例如硅化钛。 本发明可以使用卤化钛前体和一种或多种还原剂的交替循环来形成含钛材料。 例如，本发明可以利用四氯化钛和活性氢的交替循环在含硅基材的表面上形成硅化钛。

    Antiferromagnetically stabilized pseudo spin valve for memory applications
    8.
    发明授权
    Antiferromagnetically stabilized pseudo spin valve for memory applications 有权
    用于存储器应用的反铁磁稳定的假自旋阀

    公开(公告)号：US07170123B2

    公开(公告)日：2007-01-30

    申请号：US11146431

    申请日：2005-06-07

    申请人： Romney R. Katti ,  Joel A. Drewes ,  Timothy J. Vogt

    发明人： Romney R. Katti ,  Joel A. Drewes ,  Timothy J. Vogt

    IPC分类号： H01L29/76

    CPC分类号： H01L27/222 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3281 ,  H01L43/08

    摘要： The invention relates to improving the switching reliability of a magnetic memory cell in a magnetic random access memory (MRAM). Embodiments of the invention add an antiferromagnet to a magnetic memory cell. An antiferromagnetic layer can be formed adjacent to a soft layer in the MRAM on a side of the soft layer that is opposite to a hard layer of the MRAM. One embodiment further includes an additional interlayer of non-antiferromagnetic material between the antiferromagnetic layer and the soft layer.

    摘要翻译： 本发明涉及提高磁性随机存取存储器（MRAM）中磁存储单元的开关可靠性。 本发明的实施例将反铁磁体添加到磁存储单元。 可以在与MRAM的硬层相对的软层侧的MRAM中与软层相邻地形成反铁磁性层。 一个实施例还包括在反铁磁层和软层之间的非反铁磁材料的附加中间层。

    Magnetoresistive memory device
    9.
    发明授权
    Magnetoresistive memory device 有权
    磁阻存储器件

    公开(公告)号：US06627932B1

    公开(公告)日：2003-09-30

    申请号：US10121298

    申请日：2002-04-11

    申请人： Joel A. Drewes

    发明人： Joel A. Drewes

    IPC分类号： H01L2976

    CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.

    摘要翻译： 本发明包括形成诸如MRAM结构的半导体结构的方法。 在半导体衬底上形成块。 第一层和第二层形成在块上方，并且在靠近块的衬底的区域上方形成。 将第一层和第二层从块上方移除，同时将第一层和第二层的部分留在靠近块的区域上。 从第二层下面移除第一层中的至少一些，以在靠近块的区域上形成通道。 在通道内提供诸如软磁材料的材料。 本发明还包括半导体结构。

    Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding
    10.
    发明申请
    Assemblies Comprising Magnetic Elements And Magnetic Barrier Or Shielding 有权
    组件包括磁性元件和磁屏障或屏蔽

    公开(公告)号：US20100019298A1

    公开(公告)日：2010-01-28

    申请号：US12561994

    申请日：2009-09-17

    申请人： Joel A. Drewes

    发明人： Joel A. Drewes

    IPC分类号： H01L29/82

    CPC分类号： H01L27/222 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

    摘要： The invention includes a method of forming a semiconductor construction, such as an MRAM construction. A block is formed over a semiconductor substrate. First and second layers are formed over the block, and over a region of the substrate proximate the block. The first and second layers are removed from over the block while leaving portions of the first and second layers over the region proximate the block. At least some of the first layer is removed from under the second layer to form a channel over the region proximate the block. A material, such as a soft magnetic material, is provided within the channel. The invention also includes semiconductor constructions.

    摘要翻译： 本发明包括形成诸如MRAM结构的半导体结构的方法。 在半导体衬底上形成块。 第一层和第二层形成在块上方，并且在靠近块的衬底的区域上方形成。 将第一层和第二层从块上方移除，同时将第一层和第二层的部分留在靠近块的区域上。 从第二层下面移除第一层中的至少一些，以在靠近块的区域上形成通道。 在通道内提供诸如软磁材料的材料。 本发明还包括半导体结构。