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    Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
    2.
    发明申请
    Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution 审中-公开
    通过向清洗溶液施加周期性剪切应力来清洁半导体晶片表面的方法

    公开(公告)号：US20080245390A1

    公开(公告)日：2008-10-09

    申请号：US11732603

    申请日：2007-04-03

    申请人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    发明人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    IPC分类号： B08B3/12

    CPC分类号： B08B3/12 ,  H01L21/67051 ,  H01L21/67057

    摘要： Systems and methods for cleaning particulate contaminants adhered to wafer surfaces are provided. A cleaning media including dispersed coupling elements suspended within the cleaning media is applied over a wafer surface. External energy is applied to the cleaning media to generate periodic shear stresses within the media. The periodic shear stresses impart momentum and/or drag forces on the coupling elements causing the coupling elements to interact with the particulate contaminants to remove the particulate contaminants from the wafer surfaces.

    摘要翻译： 提供了清洁附着在晶片表面上的颗粒污染物的系统和方法。 包括悬浮在清洁介质内的分散的耦合元件的清洁介质被施加在晶片表面上。 外部能量被施加到清洁介质以在介质内产生周期性剪切应力。 周期性剪切应力赋予耦合元件上的动量和/或阻力，导致耦合元件与颗粒污染物相互作用以从晶片表面去除颗粒污染物。

    SUBSTRATE CLEANING TECHNIQUE EMPLOYING MULTI-PHASE SOLUTION
    5.
    发明申请
    SUBSTRATE CLEANING TECHNIQUE EMPLOYING MULTI-PHASE SOLUTION 审中-公开
    基板清洗技术采用多相解决方案

    公开(公告)号：US20130206182A1

    公开(公告)日：2013-08-15

    申请号：US13750226

    申请日：2013-01-25

    申请人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    发明人： Erik M. Freer ,  John M. de Larios ,  Michael Ravkin ,  Mikhail Korolik ,  Fritz C. Redeker

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02057 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67057 ,  H01L21/67751

    摘要： Apparatus, methods, and computer programs for cleaning opposed surfaces of a semiconductor wafer are presented. One apparatus includes first, second, and third valves, and one or more second drains. The first valves are coupled to a supply of rinsing solution and to first throughways that are coupled to an immersion tank above a region in the immersion tank, the region being defined by an area occupied by the substrate when the substrate is disposed vertically on a support within the immersion tank. The second valves are coupled to first drains and to second throughways that are coupled to the immersion tank below the region, and the third valves are coupled to a supply of cleaning solution and to third throughways that are coupled to the immersion tank below the region. Further, the second drains are coupled to fourth throughways that are coupled to the immersion tank above the region.

    摘要翻译： 提出了用于清洁半导体晶片的相对表面的装置，方法和计算机程序。 一个装置包括第一，第二和第三阀，以及一个或多个第二排水管。 第一阀被连接到冲洗溶液的供应和第一通道，其连接到浸没池中的浸没池上方的区域上，该区域由衬底占据的区域限定，当衬底垂直地布置在支撑件上时 在沉浸池内。 第二阀联接到第一通道和第二通道，第二通道连接到位于该区域下方的浸入式水箱，并且第三阀被联接到清洁溶液的供应和连接到该区域下方的浸没罐的第三通道。 此外，第二排水管连接到连接到该区域上方的浸没罐的第四通道。

    Method and apparatus for drying substrates using a surface tensions reducing gas
    6.
    发明申请
    Method and apparatus for drying substrates using a surface tensions reducing gas 审中-公开
    使用表面张力降低气体干燥基材的方法和装置

    公开(公告)号：US20080148595A1

    公开(公告)日：2008-06-26

    申请号：US11643479

    申请日：2006-12-20

    申请人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

    发明人： John M. de Larios ,  Paul A. Kittle ,  Michael Ravkin ,  Mikhail Korolik ,  Erik Freer ,  Katrina Mikhaylich ,  Fritz C. Redeker

    IPC分类号： F26B7/00 ,  F26B21/00

    CPC分类号： F26B5/14 ,  F26B21/14 ,  H01L21/67034

    摘要： A method for processing a substrate using a proximity head is disclosed. The method is initiated by, providing a head with a head surface positioned proximate to a surface of the substrate. The head has a width and a length, and the head has a plurality of ports that are configured in rows along the length of the head. The plurality of rows can extend over a width of the head, and there is a first group of ports configured to dispense a first fluid. The first fluid is dispensed to the surface of the substrate forming a meniscus between the surface of the substrate and the surface of the head. The method also includes delivering gaseous carbon dioxide from a second group of ports of the head to an interface between the meniscus and the substrate. The carbon dioxide assists in promoting a reduced surface tension on the meniscus relative to surface of the substrate.

    摘要翻译： 公开了一种使用邻近头来处理衬底的方法。 该方法是通过提供具有靠近基板的表面定位的头表面的头来开始的。 头部具有宽度和长度，头部具有沿头部长度配置成行的多个端口。 多个行可以在头部的宽度上延伸，并且存在被配置为分配第一流体的第一组端口。 将第一流体分配到基材的表面，在基材的表面和头部表面之间形成弯液面。 该方法还包括将气态二氧化碳从头部的第二组端口输送到弯月面和基底之间的界面。 二氧化碳有助于相对于基底表面促进弯月面上的表面张力降低。

    Proximity head with angled vacuum conduit system, apparatus and method
    7.
    发明授权
    Proximity head with angled vacuum conduit system, apparatus and method 有权
    接近头带有倾斜的真空管道系统，设备和方法

    公开(公告)号：US07975708B2

    公开(公告)日：2011-07-12

    申请号：US11731532

    申请日：2007-03-30

    申请人： Michael Ravkin ,  John M. de Larios ,  Fred C. Redeker ,  Mikhail Korolik ,  Erik M. Freer

    发明人： Michael Ravkin ,  John M. de Larios ,  Fred C. Redeker ,  Mikhail Korolik ,  Erik M. Freer

    IPC分类号： B08B3/00

    CPC分类号： H01L21/67051

    摘要： A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.

    摘要翻译： 包括头表面的接近头。 头表面包括第一平坦区域和多个第一管道。 多个第一导管中的每一个由多个第一离散孔中的对应的一个限定。 多个第一离散孔位于头表面并延伸穿过第一平坦区域。 头表面还包括第二平坦区域和多个第二管道。 多个第二导管由位于头表面中并延伸穿过第二平坦区域的相应多个第二离散孔限定。 头表面还包括设置在第一平坦区域和第二平坦区域之间并与之相邻的第三平坦区域和多个第三导管。 多个第三导管由位于头表面中并延伸穿过第三平坦区域的对应的多个第三离散孔限定。 第三导管相对于第三平坦区域以第一角度形成。 第一个角度在30到60度之间。 还描述了用于处理具有邻近头的衬底的系统和方法。