公开(公告)号：US20090085057A1

公开(公告)日：2009-04-02

申请号：US12195235

申请日：2008-08-20

申请人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

发明人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/04

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 Å in an n-side contact layer.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，更具体地说，涉及一种III族氮化物半导体发光器件，其可以通过提供厚度大于100埃的未掺杂的GaN层来促进电流扩散并改善静电放电特性 n侧接触层。

公开(公告)号：US20100127239A1

公开(公告)日：2010-05-27

申请号：US12648589

申请日：2009-12-29

申请人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

发明人： Eun Hyun Park ,  Soo Kun Jeon ,  Jae Gu Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/06

摘要： The present disclosure relates to a III-nitride semiconductor light-emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer doped with a p-type dopant, an active layer disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and including a quantum well layer to generate light by recombination of electrons and holes, and a diffusion barrier layer disposed between the quantum well layer and the p-type nitride semiconductor layer to be in contact with both layers, having a surface formed to make the interface with the p-type nitride semiconductor layer smooth, and to prevent diffusion of the p-type dopant into the quantum well layer.

摘要翻译： 本公开内容涉及包括n型氮化物半导体层，掺杂有p型掺杂剂的p型氮化物半导体层，设置在n型氮化物半导体层之间的有源层的III族氮化物半导体发光器件 和p型氮化物半导体层，并且包括通过电子和空穴的复合产生光的量子阱层以及设置在量子阱层和p型氮化物半导体层之间以与两层接触的扩散阻挡层 具有形成为与p型氮化物半导体层的界面平滑的表面，并且防止p型掺杂剂扩散到量子阱层中。

公开(公告)号：US20090085054A1

公开(公告)日：2009-04-02

申请号：US12195189

申请日：2008-08-20

申请人： Soo Kun Jeon ,  Eun Hyun Park ,  Jae Gu Lim

发明人： Soo Kun Jeon ,  Eun Hyun Park ,  Jae Gu Lim

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  H01L33/14

摘要： The present disclosure relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 Å in an n-side contact layer.

摘要翻译： 本发明涉及一种III族氮化物半导体发光器件，更具体地说，涉及一种III族氮化物半导体发光器件，其可以通过提供厚度超过300埃的未掺杂的GaN层来促进电流扩散并提高静电放电特性 n侧接触层。

公开(公告)号：US07432534B2

公开(公告)日：2008-10-07

申请号：US10544271

申请日：2005-03-04

申请人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Hyun Park ,  Soo Kun Jeon

发明人： Tae-Kyung Yoo ,  Chang Tae Kim ,  Eun Hyun Park ,  Soo Kun Jeon

IPC分类号： H01L27/15

CPC分类号： H01L33/32

摘要： The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor layers having a p-type III-nitride semiconductor layer at the top thereof, a SiaCbNc (a≧0,b>0,c≧0) layer grown on the p-type III-nitride semiconductor layer, the SiaCbNc layer having an n-type conductivity and a thickness of 5 Å to 500 Å for the holes to be injected into the p-type III-nitride semiconductor layer by tunneling, and a p-side electrode formed on the SiaCbNc layer. According to the present invention, a SiaCbNc (a≧0,b>0,c>0) layer which can be doped with a high concentration is intervened between a p-type nitride semiconductor layer and a p-side electrode. Therefore, the present invention can solve the conventional problem.

摘要翻译： 本发明涉及包含多个III族氮化物半导体层的III族氮化物半导体发光器件，所述III族氮化物半导体层包括通过电子和空穴的复合发射光的有源层，所述多个III族氮化物半导体层具有p型III- （a> = 0，b> 0，c> = 0）的氮化物半导体层， ）层生长在p型III族氮化物半导体层上，具有n型导电性的Si a C b C n C c C层，以及 通过隧道将待注入到p型III族氮化物半导体层中的空穴的厚度为5埃至500埃，以及形成在Si III-B层上的p侧电极 N 层。 根据本发明，可以使用一种或多种C 1 -C 4烷基（a> = 0，b> 0，c> 0）的Si 可以在p型氮化物半导体层和p侧电极之间插入高浓度的掺杂。 因此，本发明可以解决常规问题。

公开(公告)号：US08431939B2

公开(公告)日：2013-04-30

申请号：US13498656

申请日：2010-08-11

申请人： Soo Kun Jeon ,  Eun Hyun Park ,  Jong Won Kim ,  Jun Chun Park

发明人： Soo Kun Jeon ,  Eun Hyun Park ,  Jong Won Kim ,  Jun Chun Park

IPC分类号： H01L21/00

CPC分类号： H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 至少一个半导体层叠体，其设置在所述基板的所述第一表面上，并且各自包括有源层和设置在所述有源层的两侧的第一和第二半导体层，所述第一半导体层具有第一导电性，所述第二半导体层具有第二导电性 不同于第一导电性，第一半导体层具有暴露表面; 基板刺穿部分，其从所述第二表面延伸到所述第一表面，与所述暴露表面间隔开，并且不被所述至少一个半导体堆叠体覆盖; 以及经由基板穿刺部分通向至少一个半导体层叠体的电路径。

公开(公告)号：US08373174B2

公开(公告)日：2013-02-12

申请号：US12748540

申请日：2010-03-29

申请人： Soo Kun Jeon ,  Eun Hyun Park ,  Jun Chun Park

发明人： Soo Kun Jeon ,  Eun Hyun Park ,  Jun Chun Park

IPC分类号： H01L29/15 ,  H01L31/0256 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L2224/48137 ,  H01L2924/181 ,  H01L2924/00012

摘要： The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.

摘要翻译： 本III-氮化物半导体发光器件包括：具有第一导电类型的第一III族氮化物半导体层; 具有不同于第一导电类型的第二导电类型的第二III族氮化物半导体层; 设置在第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，并且通过电子和空穴的复合产生光; 以及与活性层接触并具有第一导电类型的耗尽阻挡层。

公开(公告)号：US20120193674A1

公开(公告)日：2012-08-02

申请号：US13498656

申请日：2010-08-11

申请人： Soo Kun Jeon ,  Eun Hyun Park ,  Jong Won Kim ,  Jun Chun Park

发明人： Soo Kun Jeon ,  Eun Hyun Park ,  Jong Won Kim ,  Jun Chun Park

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.

摘要翻译： 本公开涉及一种半导体发光器件，其包括：具有第一表面和第二表面的衬底; 至少一个半导体层叠体，其设置在所述基板的所述第一表面上，并且各自包括有源层和设置在所述有源层的两侧的第一和第二半导体层，所述第一半导体层具有第一导电性，所述第二半导体层具有第二导电性 不同于第一导电性，第一半导体层具有暴露表面; 基板刺穿部分，其从所述第二表面延伸到所述第一表面，与所述暴露表面间隔开，并且不被所述至少一个半导体堆叠体覆盖; 以及经由基板穿刺部分通向至少一个半导体层叠体的电路径。

公开(公告)号：US08053793B2

公开(公告)日：2011-11-08

申请号：US12084198

申请日：2006-10-30

申请人： Eun Hyun Park ,  Tae-Kyung Yoo

发明人： Eun Hyun Park ,  Tae-Kyung Yoo

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/16 ,  H01L33/32

摘要： The present invention discloses a III-nitride compound semiconductor light emitting device including an active layer for generating light by recombination of an electron and a hole between an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer. The active layer is disposed over the n-type nitride compound semiconductor layer. The III-nitride compound semiconductor light emitting device includes a masking film made of MgN and grown on the p-type nitride compound semiconductor layer, and at least one nitride compound semiconductor layer grown after the growth of the masking film made of MgN.

摘要翻译： 本发明公开了一种III族氮化物化合物半导体发光器件，其包括通过电子与n型氮化物化合物半导体层和p型氮化物半导体层之间的空穴的复合产生光的有源层。 有源层配置在n型氮化物半导体层的上方。 III族氮化物化合物半导体发光器件包括由MgN制成并在p型氮化物半导体层上生长的掩模膜，以及在由MgN形成的掩模膜生长之后生长的至少一个氮化物半导体层。

公开(公告)号：US20090321713A1

公开(公告)日：2009-12-31

申请号：US11988495

申请日：2005-10-18

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： The present invention is to provide a method for controlling an active layer of a Hi-nitride semiconductor light emitting device by doping a barrier layer(s) selected from the active layer to suppress light emission in a specific well layer(s).

摘要翻译： 本发明提供一种通过掺杂从有源层选择的势垒层来​​抑制特定阱层中的发光来控制氮化镓半导体发光器件的有源层的方法。

公开(公告)号：US07501664B2

公开(公告)日：2009-03-10

申请号：US10597617

申请日：2005-02-05

申请人： Tae Kyung Yoo ,  Eun Hyun Park

发明人： Tae Kyung Yoo ,  Eun Hyun Park

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06 ,  H01L33/12 ,  H01L33/14

摘要： The present invention provides a III-nitride compound semiconductor light emitting device comprising an active layer (30) which emits light and is interposed between a lower contact layer (20) made of n-GaN and an upper contact layer (40) made of p-GaN, in which a sequential stack of a lattice mismatch-reducing layer L3 made of InxGa1-xN, an electron supply layer L4 made of n-GaN or n-AlyGa1-yN and a crystal restoration layer L5 made of InzGa1-zN is interposed between the lower contact layer and the active layer, and further comprising an electron acceleration layer L1 made of n-GaN or undoped GaN and a heterojunction electron barrier-removing layer L2, thereby the lattice mismatch between the lower contact layer (20) and the active layer (30) can be reduced.

摘要翻译： 本发明提供了一种III族氮化物化合物半导体发光器件，其包括发射光的有源层（30）并且介于由n-GaN制成的下接触层（20）和由p形成的上接触层（40）之间 其中由In x Ga 1-x N制成的晶格失配减小层L3的顺序堆叠，由n-GaN或n-AllyGa1-yN制成的电子供应层L4和由InzGa1-zN制成的晶体恢复层L5的顺序堆叠是 插入在下接触层和有源层之间，还包括由n-GaN或未掺杂的GaN制成的电子加速层L1和异质结电子势垒去除层L2，从而使下接触层（20）和 可以减少有源层（30）。