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    Method of manufacturing a semiconductor device using a cleaning composition
    2.
    发明申请
    Method of manufacturing a semiconductor device using a cleaning composition 审中-公开
    使用清洁组合物制造半导体器件的方法

    公开(公告)号：US20060014391A1

    公开(公告)日：2006-01-19

    申请号：US11176276

    申请日：2005-07-08

    申请人： Kyung-Jin Lee ,  Seung-Hyun Ahn ,  Baik-Soon Choi ,  Kui-Jong Baek ,  Woong Hahn

    发明人： Kyung-Jin Lee ,  Seung-Hyun Ahn ,  Baik-Soon Choi ,  Kui-Jong Baek ,  Woong Hahn

    IPC分类号： H01L21/465

    CPC分类号： H01L21/02071 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  C23G1/106 ,  C23G1/125

    摘要： A metal-containing pattern structure is formed on a semiconductor substrate, and a cleaning composition is applied to the semiconductor substrate. The cleaning composition includes, based on a total weight of the cleaning composition, about 78 wt % to about 99.98 wt % of an acidic aqueous solution, about 0.01 wt % to about 11 wt % of a first chelating agent, and about 0.01 wt % to about 11 wt % of a second chelating agent. The metal-containing pattern structure includes an exposed first surface portion and a second surface portion covered with a polymer. Application of the cleaning solution forms a first corrosion-inhibition layer on the first surface portion of the metal-containing pattern structure, and removes the polymer from the second surface portion of the metal-containing pattern structure.

    摘要翻译： 在半导体衬底上形成含有金属的图案结构，并将清洗组合物涂敷在半导体衬底上。 清洁组合物基于清洁组合物的总重量包含约78重量％至约99.98重量％的酸性水溶液，约0.01重量％至约11重量％的第一螯合剂和约0.01重量％ 至约11重量％的第二螯合剂。 含金属的图案结构包括暴露的第一表面部分和被聚合物覆盖的第二表面部分。 清洁溶液的应用在含金属图案结构的第一表面部分上形成第一防腐蚀层，并从含金属图案结构的第二表面部分除去聚合物。

    Methods of forming a photosensitive film
    6.
    发明授权
    Methods of forming a photosensitive film 有权
    形成感光膜的方法

    公开(公告)号：US08227182B2

    公开(公告)日：2012-07-24

    申请号：US12539041

    申请日：2009-08-11

    申请人： Ahn-Ho Lee ,  Baik-Soon Choi ,  Seung-Hyun Ahn ,  Sang-Tae Kim ,  Yong-Il Kim ,  Shi-Jin Sung ,  Kyong-Ho Lee

    发明人： Ahn-Ho Lee ,  Baik-Soon Choi ,  Seung-Hyun Ahn ,  Sang-Tae Kim ,  Yong-Il Kim ,  Shi-Jin Sung ,  Kyong-Ho Lee

    IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/30 ,  G03F7/40

    CPC分类号： G03F7/168

    摘要： In a thinner composition and a method of forming a photosensitive film, the thinner composition includes about 50 to about 90% by weight of propylene glycol monomethyl ether acetate, about 1 to about 20% by weight of propylene glycol monomethyl ether, about 1 to about 10% by weight of γ-butyrolactone, and about 1 to about 20% by weight of n-butyl acetate. The thinner composition may have a proper volatility and an improved ability to dissolve various types of photosensitive materials, and thus the thinner composition may be usefully employed in an edge bead rinse process, a rework process or a pre-wetting process.

    摘要翻译： 在较薄的组合物和形成感光膜的方法中，较薄的组合物包括约50至约90重量％的丙二醇单甲醚乙酸酯，约1至约20重量％的丙二醇单甲醚，约1至约 10重量％的γ-丁内酯和约1至约20重量％的乙酸正丁酯。 更薄的组合物可以具有适当的挥发性和改善溶解各种感光材料的能力，因此较薄的组合物可有效地用于边缘珠漂洗工艺，返工工艺或预润湿工艺。

    Photoresist stripper compositions
    8.
    发明授权
    Photoresist stripper compositions 失效
    光刻胶剥离剂组合物

    公开(公告)号：US06589719B1

    公开(公告)日：2003-07-08

    申请号：US10116030

    申请日：2002-04-05

    申请人： Seung-Hyun Ahn ,  Sang-Mun Chon ,  Hoe-Sik Chung ,  Mi-Sook Jeon ,  Eun-Mi Bae ,  Baik-Soon Choi ,  Ok-Seok Jang

    发明人： Seung-Hyun Ahn ,  Sang-Mun Chon ,  Hoe-Sik Chung ,  Mi-Sook Jeon ,  Eun-Mi Bae ,  Baik-Soon Choi ,  Ok-Seok Jang

    IPC分类号： G03C742

    CPC分类号： G03F7/168 ,  G03F7/422

    摘要： A photoresist stripper composition is made up of a mixture of an acetic acid ester, &ggr;-butyrolactone (GBL), and a non-acetate ester or a poly alkyl alcohol derivative. The acetic acid ester may be at least one of n-butyl acetate, amyl acetate, ethyl aceto-acetate, and isopropyl acetate. The non-acetate ester may be at least one of ethyl lactate (EL), ethyl-3-ethoxy propionate (EEP) and methyl-3-methoxy (MMP). The poly alkyl alcohol derivative may be at least one of propylene glycol monomethyl ester (PGME) and propylene glycol monomethyl ester acetate (PGMEA).

    摘要翻译： 光致抗蚀剂剥离剂组合物由乙酸酯，γ-丁内酯（GBL）和非乙酸酯或多烷基醇衍生物的混合物组成。 乙酸酯可以是乙酸正丁酯，乙酸戊酯，乙酸乙酯和乙酸异丙酯中的至少一种。 非乙酸酯酯可以是乳酸乙酯（EL），乙基-3-乙氧基丙酸酯（EEP）和甲基-3-甲氧基（MMP）中的至少一种。 聚烷基醇衍生物可以是丙二醇单甲酯（PGME）和丙二醇单甲酯乙酸酯（PGMEA）中的至少一种。

    Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield
    9.
    发明授权
    Inductive-coupled plasma apparatus employing shield and method for manufacturing the shield 失效
    使用屏蔽的感应耦合等离子体装置和用于制造屏蔽的方法

    公开(公告)号：US06251241B1

    公开(公告)日：2001-06-26

    申请号：US09546557

    申请日：2000-04-10

    申请人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

    发明人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

    IPC分类号： C23C1434

    CPC分类号： H01J37/321

    摘要： An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

    摘要翻译： 电感耦合等离子体装置采用屏蔽来减少溅射污染。 包括制造屏蔽的方法。 一种用于产生高密度等离子体的设备包括具有沿着平面定位的介电窗口的处理室，位于处理室外部的线圈，靠近电介质窗口并基本上平行于该平面，以及位于线圈和 电介质窗。 屏蔽件具有多个开口，其中屏蔽件的多个开口设置在对应于线圈匝之间的区域的位置处。

    Method for manufacturing a shield for an inductively-couple plasma apparatus
    10.
    发明授权
    Method for manufacturing a shield for an inductively-couple plasma apparatus 失效
    电感耦合等离子体装置用屏蔽体的制造方法

    公开(公告)号：US06585907B2

    公开(公告)日：2003-07-01

    申请号：US09839162

    申请日：2001-04-23

    申请人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

    发明人： Eun-Hee Shin ,  Jin-Man Kim ,  Baik-Soon Choi ,  Hun Cha

    IPC分类号： G01L2130

    CPC分类号： H01J37/321

    摘要： An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located along a plane, a coil located outside the process chamber proximate to the dielectric window and substantially parallel to the plane, and a shield located between the coil and the dielectric window. The shield has multiple openings, wherein the multiple openings of the shield are disposed at locations corresponding to areas between the turns of the coil.

    摘要翻译： 电感耦合等离子体装置采用屏蔽来减少溅射污染。 包括制造屏蔽的方法。 一种用于产生高密度等离子体的设备包括具有沿着平面定位的介电窗口的处理室，位于处理室外部的线圈，靠近电介质窗口并且基本上平行于该平面，以及位于线圈和 电介质窗。 屏蔽件具有多个开口，其中屏蔽件的多个开口设置在对应于线圈匝之间的区域的位置处。