Face-on, gas-assisted etching for plan-view lamellae preparation

    公开(公告)号:US10546719B2

    公开(公告)日:2020-01-28

    申请号:US15987847

    申请日:2018-05-23

    申请人: FEI Company

    摘要: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    Enhanced charged particle beam processes for carbon removal

    公开(公告)号:US10347463B2

    公开(公告)日:2019-07-09

    申请号:US15374617

    申请日:2016-12-09

    申请人: FEI Company

    摘要: Method and system for enhanced charged particle beam processes for carbon removal. With the method and system for enhancing carbon removal, associated method and system for decreasing levels of carbon impurity in depositions, also using a precursor gas in charged particle beam processes (and particularly focused ion beam methodologies), are provided. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    FACE-ON, GAS-ASSISTED ETCHING FOR PLAN-VIEW LAMELLAE PREPARATION

    公开(公告)号:US20180350558A1

    公开(公告)日:2018-12-06

    申请号:US15987847

    申请日:2018-05-23

    申请人: FEI Company

    摘要: Method for preparing site-specific, plan-view lamellae from multilayered microelectronic devices. A focused ion beam that is directed, with an etch-assisting gas, toward an uppermost layer of a device removes at least that uppermost layer and thereby exposes an underlying layer over, or comprising, a target area from which the site-specific, plan-view lamella is to be prepared, wherein the focused ion beam is in a face-on orientation in removing the uppermost layer to expose the underlying layer. In a preferred embodiment, the etch-assisting gas comprises methyl nitroacetate. In alternative embodiments, the etch-assisting gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.