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公开(公告)号:US10105734B2
公开(公告)日:2018-10-23
申请号:US14992743
申请日:2016-01-11
申请人: FEI Company
IPC分类号: G01N35/00 , B05D5/02 , B05C3/10 , B05D3/04 , B05D5/00 , C23C18/16 , C25D5/16 , C25D7/12 , C25D21/04 , H01L21/02 , H01L21/306 , H01L21/3205 , H01J37/20 , H01J37/317 , G01N1/32 , G01N1/44
摘要: A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.
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公开(公告)号:US09899181B1
公开(公告)日:2018-02-20
申请号:US15405139
申请日:2017-01-12
申请人: FEI Company
发明人: Gregory A. Schwind , Aurelien Philippe Jean Maclou Botman , Sean Kellogg , Leon van Kouwen , Luigi Mele
CPC分类号: H01J27/20 , H01J27/205 , H01J37/08 , H01J37/26 , H01J2237/006 , H01J2237/061 , H01J2237/082
摘要: A collision ionization ion source comprising: A pair of stacked plates, sandwiched about an intervening gap; An input zone (aperture), provided in a first of said plates, to admit an input beam of charged particles to said gap; An output zone (aperture), located opposite said input zone and provided in the second of said plates, to allow emission of a flux of ions from said gap; A gas space, between said input and output zones, in which gas can be ionized by said input beam so as to produce said ions; A supply duct in said gap, for supplying a flow of said gas to said gas space, and comprising: An emergence orifice, opening into said gas space; An entrance orifice, connectable to a gas supply, wherein said duct comprises at least one transition region between said entrance orifice and said emergence orifice in which an inner height of said duct, measured normal to the plates, decreases from a first height value to a second height value.
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公开(公告)号:US09812286B2
公开(公告)日:2017-11-07
申请号:US14978180
申请日:2015-12-22
申请人: FEI Company
IPC分类号: C25D17/10 , C25D5/02 , H01J37/20 , C25D5/04 , C25D5/00 , C25D17/00 , C25D17/12 , C25D21/04 , C25D21/12 , H01J37/18 , H01J37/22 , H01J37/28
CPC分类号: H01J37/20 , C25D5/003 , C25D5/02 , C25D5/026 , C25D5/04 , C25D17/005 , C25D17/10 , C25D17/12 , C25D21/04 , C25D21/12 , H01J37/18 , H01J37/222 , H01J37/28 , H01J2237/182 , H01J2237/2003 , H01J2237/202 , H01J2237/2801
摘要: A charge transfer mechanism is used to locally deposit or remove material for a small structure. A local electrochemical cell is created without having to immerse the entire work piece in a bath. The charge transfer mechanism can be used together with a charged particle beam or laser system to modify small structures, such as integrated circuits or micro-electromechanical system. The charge transfer process can be performed in air or, in some embodiments, in a vacuum chamber.
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公开(公告)号:US20170002467A1
公开(公告)日:2017-01-05
申请号:US15201590
申请日:2016-07-04
申请人: FEI Company
发明人: Marcus Straw , Chad Rue , Steven Randolph , Aurelien Philippe Jean Maclou Botman , Clive D. Chandler , Mark W. Utlaut
CPC分类号: C23C16/52 , C23C16/047 , C23C16/4418 , H01J37/3023 , H01J37/3026 , H01J37/304 , H01J37/317 , H01J37/3178 , H01J2237/30416 , H01J2237/30455 , H01J2237/30472 , H01J2237/31735 , H01J2237/31749
摘要: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.
摘要翻译: 提供了一种用于带电束系统的改进的过程控制,其允许在材料沉积过程中从计算机生成的模型精确地产生复杂的二维和三维结构的能力。 过程控制主动监测材料沉积过程,并根据需要进行校正调整,以产生在可接受的公差范围内,甚至无需用户干预的图案或结构。 过程控制包括包含针对特定模式或结构的属性的信息的数据库,并且使用算法在材料沉积过程期间指示束系统。 可以使用诸如图像识别,室压读数和EDS信号的各种手段的反馈来指示系统在材料沉积运行期间进行自动系统修改,例如光束和气体参数或对图案的其它修改。
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公开(公告)号:US20170002455A1
公开(公告)日:2017-01-05
申请号:US15199690
申请日:2016-06-30
申请人: FEI Company
CPC分类号: C23C14/221 , C23C14/30 , C23C14/54 , C23C16/047 , C23C16/486 , H01J2237/31732
摘要: A method for planning a beam path for material deposition is provided in which a structure pattern having features of varying size is analyzed to determine the size of each feature. A beam path throughout the structure pattern is determined and the beam current required for each point in the structure pattern is configured. Configuring the beam current required for each point involves determining the acceptable beam dose for that point. Relatively small features require a low beam current for high accuracy and relatively large features can be formed using a higher beam current allowing faster deposition. Each feature in the structure pattern is deposited at the highest beam current acceptable to allow accurate deposition of the feature.
摘要翻译: 提供了一种用于规划材料沉积的光束路径的方法,其中分析具有不同大小的特征的结构图案以确定每个特征的尺寸。 确定整个结构图案中的光束路径,并且配置结构图案中的每个点所需的束电流。 配置每个点所需的束电流包括确定该点可接受的光束剂量。 相对小的特征需要较低的光束电流以获得高精度,并且可以使用较高的束电流形成较大的特征,从而允许更快的沉积。 结构图案中的每个特征以可接受的最高束电流沉积以允许特征的精确沉积。
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6.
公开(公告)号:US09478390B2
公开(公告)日:2016-10-25
申请号:US14320560
申请日:2014-06-30
申请人: FEI Company
发明人: N. William Parker , Marcus Straw , Jorge Filevich , Aurelien Philippe Jean Maclou Botman , Steven Randolph , Clive Chandler , Mark Utlaut
CPC分类号: H01J37/12 , H01J37/228 , H01J2237/006 , H01J2237/31749
摘要: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.
摘要翻译: 一种用于将光或气体或两者引导到位于距离带电粒子束柱的下端约2mm的样本的方法和装置。 带电粒子束柱组件包括限定样品保持位置的平台,并且具有一组静电透镜,每个静电透镜包括一组电极。 组件包括最终静电透镜,其包括最靠近样品保持位置的最终电极。 该最终电极限定至少一个内部通道,其具有靠近并指向试样保持位置的终端。
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7.
公开(公告)号:US20160199878A1
公开(公告)日:2016-07-14
申请号:US14992743
申请日:2016-01-11
申请人: FEI Company
IPC分类号: B05D5/02 , B05C3/10 , B05D3/04 , C23C18/16 , H01L21/02 , C25D5/16 , C25D21/04 , H01L21/306 , H01L21/3205 , B05D5/00 , C25D7/12
CPC分类号: B05D5/02 , B05C3/10 , B05D3/0493 , B05D5/00 , C23C18/1633 , C25D5/16 , C25D7/12 , C25D21/04 , G01N1/32 , G01N1/44 , H01J37/20 , H01J37/317 , H01J2237/20 , H01J2237/2067 , H01J2237/31745 , H01L21/02041 , H01L21/30604 , H01L21/32051
摘要: A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.
摘要翻译: 一种修改粒子光学装置的真空室中的样品表面层的方法,该方法是在真空中进行的,该方法包括:提供附着于机械手的微观样品,在第一(受控)温度下提供第一液体, 将样品浸入第一液体中,从而引起样品表面改性,从第一液体中取出样品,在第二(受控)温度下提供第二液体,将样品浸入第二液体,并从第二液体中取出样品 液体。 这使得能够原地对样品进行湿法处理,从而提高速度和/或避免样品随后的变化/污染,例如氧化等。该方法特别可用于在用(镓 )FIB以去除发生镓注入的表面层,或者晶格被扰乱的表面层。
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8.
公开(公告)号:US20150380205A1
公开(公告)日:2015-12-31
申请号:US14320560
申请日:2014-06-30
申请人: FEI Company
发明人: N. William Parker , Mark Straw , Jorge Filevich , Aurelien Philippe Jean Maclou Botman , Steven Randolph , Clive Chandler , Mark Utlaut
IPC分类号: H01J37/12
CPC分类号: H01J37/12 , H01J37/228 , H01J2237/006 , H01J2237/31749
摘要: A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column The charged particle beam column assembly includes a platform defining a specimen holding position and has a set of electrostatic lenses each including a set of electrodes. The assembly includes a final electrostatic lens that includes a final electrode that is closest to the specimen holding position. This final electrode defines at least one internal passageway having a terminus that is proximal to and directed toward the specimen holding position.
摘要翻译: 一种用于将光或气体或两者引导到位于距离带电粒子束柱的下端约2mm的样本的方法和装置。带电粒子束柱组件包括限定样本保持位置并具有一组静电透镜的平台 每个包括一组电极。 组件包括最终静电透镜,其包括最靠近样品保持位置的最终电极。 该最终电极限定至少一个内部通道,其具有靠近并指向试样保持位置的终端。
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公开(公告)号:US20240071720A1
公开(公告)日:2024-02-29
申请号:US18448430
申请日:2023-08-11
申请人: FEI Company
IPC分类号: H01J37/317 , H01J37/20 , H01J37/305
CPC分类号: H01J37/3178 , H01J37/20 , H01J37/3053 , H01J2237/24585 , H01J2237/31745 , H01J2237/31749
摘要: Method and system for sample preparation includes positioning an extraneous specimen close to a target specimen in a vacuum chamber, directing a charged particle beam towards the extraneous specimen while flowing a precursor gas in the vacuum chamber, and depositing or etching on one or more surfaces of the target specimen with the assist of the precursor gas.
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公开(公告)号:US10325750B2
公开(公告)日:2019-06-18
申请号:US15874798
申请日:2018-01-18
申请人: FEI Company
发明人: Gregory A. Schwind , Aurelien Philippe Jean Maclou Botman , Sean Kellogg , Leon van Kouwen , Luigi Mele
摘要: A collision ionization source is disclosed herein. An example source includes an ionization region arranged to receive a gas and a charged particle beam, the charged particle beam to ionize at least some of the gas, and a supply duct arranged to provide the gas to the ionization region, the supply duct having a non-uniform height decreasing from an input orifice to an output orifice, the output orifice arranged adjacent to the ionization region.
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