公开(公告)号：US11424320B2

公开(公告)日：2022-08-23

申请号：US16313272

申请日：2017-06-30

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

申请人： FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

发明人： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

摘要： According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US11152208B2

公开(公告)日：2021-10-19

申请号：US16332659

申请日：2017-09-14

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Takayuki Uchida ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/458

摘要： A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.

公开(公告)号：US11189846B2

公开(公告)日：2021-11-30

申请号：US16608283

申请日：2018-04-27

申请人： FLOSFIA INC. ,  EYETEC CO., LTD. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Masafumi Ono ,  Takayuki Uchida ,  Kentaro Kaneko ,  Takashi Tanaka ,  Toshimi Hitora ,  Shingo Yagyu

IPC分类号： H01M8/021 ,  C22C38/04 ,  C22C38/44 ,  H01M8/0228 ,  H01M8/0254 ,  H01M8/1018

摘要： An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0×10−4 mol/dm3 at pH3 and having a temperature of 25° C., an anode current density that is 1×10−7 A/cm2 or less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.

公开(公告)号：US10580648B2

公开(公告)日：2020-03-03

申请号：US16120914

申请日：2018-09-04

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Riena Jinno ,  Shizuo Fujita ,  Kentaro Kaneko ,  Tokiyoshi Matsuda ,  Takashi Shinohe ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  C30B33/02 ,  H01L29/04 ,  H01L29/737 ,  H01L29/24 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  H01L29/08

摘要： In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

公开(公告)号：US11916103B2

公开(公告)日：2024-02-27

申请号：US17866747

申请日：2022-07-18

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

CPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L33/26 ,  H02M3/28

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US11087977B2

公开(公告)日：2021-08-10

申请号：US16326569

申请日：2017-08-29

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L29/872 ,  H01L33/26 ,  H01L29/24 ,  C23C16/448 ,  H01L29/78 ,  H01L29/808 ,  H01L29/778 ,  H01L29/737 ,  H01L29/739 ,  H01L29/812 ,  H01L29/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/423

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

公开(公告)号：US20240202418A1

公开(公告)日：2024-06-20

申请号：US18430948

申请日：2024-02-02

申请人： Flosfia Inc. ,  Mitsubishi Heavy Industries, Ltd.

发明人： Masato Ito ,  Masaya Mitake ,  Kengo Takeuchi ,  Toshimi Hitora ,  Fujio Okui

IPC分类号： G06F30/392

CPC分类号： G06F30/392

摘要： A design support apparatus supports design of a component embedded substrate including an embedded electronic component that configures at least a part of a circuit. The apparatus includes a component information acquiring unit that acquires component information containing component identifying information about the electronic component to be incorporated in the substrate, a pad information acquiring unit that acquires pad information about a type and number of electrode pads to be arranged on the substrate based on the component information, a mounting arrangement information acquiring unit that acquires mounting arrangement information about the arrangement of the substrate and another component on a mounting board in which the component embedded substrate is to be incorporated, and a pad arrangement selecting unit that selects the arrangement of the electrode pad on a surface of the substrate based on the mounting arrangement information and the pad information.

公开(公告)号：US11462746B2

公开(公告)日：2022-10-04

申请号：US15941165

申请日：2018-03-30

申请人： FLOSFIA INC.

发明人： Shingo Yagyu ,  Takuto Igawa ,  Toshimi Hitora

IPC分类号： H01M8/0228 ,  H01M8/026 ,  H01M8/0206 ,  C23C16/448 ,  C23C16/40 ,  H01M8/0215 ,  H01M8/10 ,  H01M8/021

摘要： In a first aspect of a present inventive subject matter, a multilayer structure includes a base with a surface and an electrically-conductive metal oxide film that is positioned directly or via another layer on the base. At least a part of the surface of the base contains as a major component at least one selected from the group of copper, copper alloy, aluminum, aluminum alloy, magnesium, magnesium alloy, and stainless steel. The electrically-conductive metal oxide film is 30 nm or more in thickness. The multilayer structure is electrically-conductive and has a contact resistance that is 100 mΩcm2 or less.

公开(公告)号：US11088242B2

公开(公告)日：2021-08-10

申请号：US16981550

申请日：2020-03-30

申请人： FLOSFIA INC.

发明人： Tokiyoshi Matsuda ,  Takahiro Sasaki ,  Toshimi Hitora ,  Isao Takahashi

IPC分类号： C30B29/22 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01C7/04 ,  H01L29/872 ,  H01L29/78 ,  H01C7/02

摘要： As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.