公开(公告)号：US11424320B2

公开(公告)日：2022-08-23

申请号：US16313272

申请日：2017-06-30

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

申请人： FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

发明人： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

摘要： According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US11189846B2

公开(公告)日：2021-11-30

申请号：US16608283

申请日：2018-04-27

申请人： FLOSFIA INC. ,  EYETEC CO., LTD. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Masafumi Ono ,  Takayuki Uchida ,  Kentaro Kaneko ,  Takashi Tanaka ,  Toshimi Hitora ,  Shingo Yagyu

IPC分类号： H01M8/021 ,  C22C38/04 ,  C22C38/44 ,  H01M8/0228 ,  H01M8/0254 ,  H01M8/1018

摘要： An electrically-conductive member having sufficient corrosion resistivity even when the electrically-conductive member is exposed to high potential environment and a method of manufacturing the electrically-conductive member are offered. An electrically-conductive member is obtained by a mist CVD method, by forming a metal oxide film on a base member of a separator, and the electrically-conductive member has an active potential range and a passive potential range in an anode polarization curve that is measured in a sulfuric acid aqueous solution having a sulfuric acid concentration that is 5.0×10−4 mol/dm3 at pH3 and having a temperature of 25° C., an anode current density that is 1×10−7 A/cm2 or less in the passive potential range, and the passive potential range reaching to an electric potential that is 1V.

公开(公告)号：US10580648B2

公开(公告)日：2020-03-03

申请号：US16120914

申请日：2018-09-04

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Riena Jinno ,  Shizuo Fujita ,  Kentaro Kaneko ,  Tokiyoshi Matsuda ,  Takashi Shinohe ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/778 ,  C30B33/02 ,  H01L29/04 ,  H01L29/737 ,  H01L29/24 ,  C23C16/40 ,  C23C16/56 ,  C30B25/02 ,  C30B29/16 ,  H01L29/08

摘要： In a first aspect of a present inventive subject matter, a semiconductor device includes a first semiconductor layer that is an electron-supply layer containing as a major component a first semiconductor crystal with a metastable crystal structure; and a second semiconductor layer that is an electron-transit layer containing as a major component a second semiconductor crystal with a hexagonal crystal structure. The first semiconductor crystal contained in the first semiconductor layer is different in composition from the second semiconductor crystal comprised in the second semiconductor layer.

公开(公告)号：US11152208B2

公开(公告)日：2021-10-19

申请号：US16332659

申请日：2017-09-14

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Takayuki Uchida ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/458

摘要： A semiconductor film containing silicon that is evenly doped in the semiconductor film with an enhanced semiconductor property and a method of the semiconductor film using a dopant material containing a complex compound that contains at least silicon and a halogen. The complex compound further contains a hydrocarbon group that is optionally substituted or heterocyclic group that is optionally substituted. A semiconductor film containing Si doped into the semiconductor film as a dopant to a depth that is at least 0.3 μm or deeper from a surface of the semiconductor film is obtained by forming the semiconductor film in that the dopant material is doped, the semiconductor film is 100 μm or less in film thickness with carrier density that is 1×1020/cm3 or less and electron mobility that is 1 cm2/Vs or more.

公开(公告)号：US11916103B2

公开(公告)日：2024-02-27

申请号：US17866747

申请日：2022-07-18

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Toshimi Hitora ,  Tomochika Tanikawa

IPC分类号： H01L29/10 ,  H01L29/06 ,  H01L29/47 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L29/24 ,  H01L29/739 ,  H01L29/12 ,  H02M3/28 ,  H01L33/26

CPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/47 ,  H01L29/739 ,  H01L29/7391 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/02 ,  H01L33/26 ,  H02M3/28

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution containing at least a d-block metal in the periodic table and a metal of Group 13 of the periodic table; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base under an atmosphere of oxygen to form the p-type oxide semiconductor on the base.

公开(公告)号：US11087977B2

公开(公告)日：2021-08-10

申请号：US16326569

申请日：2017-08-29

申请人： FLOSFIA INC. ,  KYOTO UNIVERSITY

发明人： Shizuo Fujita ,  Kentaro Kaneko ,  Masaya Oda ,  Toshimi Hitora

IPC分类号： H01L21/02 ,  C23C16/40 ,  H01L29/872 ,  H01L33/26 ,  H01L29/24 ,  C23C16/448 ,  H01L29/78 ,  H01L29/808 ,  H01L29/778 ,  H01L29/737 ,  H01L29/739 ,  H01L29/812 ,  H01L29/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/423

摘要： A new and useful p-type oxide semiconductor with a wide band gap and an enhanced electrical conductivity and the method of manufacturing the p-type oxide semiconductor are provided. A method of manufacturing a p-type oxide semiconductor including: generating atomized droplets by atomizing a raw material solution including iridium and a metal that is different from iridium and optionally contained; carrying the atomized droplets onto a surface of a base by using a carrier gas; causing a thermal reaction of the atomized droplets adjacent to the surface of the base to form a crystal or a mixed crystal of a metal oxide including iridium.

公开(公告)号：US09954135B2

公开(公告)日：2018-04-24

申请号：US14901778

申请日：2013-07-11

申请人： TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYSTEMS CORPORATION ,  KYOTO UNIVERSITY ,  KOCHI PREFECTURAL PUBLIC UNIVERSITY CORPORATION

发明人： Takahiro Hiramatsu ,  Hiroyuki Orita ,  Takahiro Shirahata ,  Toshiyuki Kawaharamura ,  Shizuo Fujita

IPC分类号： H01L31/18 ,  H01L31/028 ,  H01L31/0216

CPC分类号： H01L31/1868 ,  H01L31/0216 ,  H01L31/028 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for manufacturing solar cell includes the following. A solution containing aluminum elements is misted. The misted solution is sprayed onto the main surface of a p-type silicon substrate in the atmosphere, to thereby form an aluminum oxide film. Then, a solar cell is produced using the p-type silicon substrate including the aluminum oxide film formed thereon.

公开(公告)号：US10290762B2

公开(公告)日：2019-05-14

申请号：US15736351

申请日：2015-06-18

申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation ,  Kochi Prefectural Public University Corporation ,  Kyoto University

发明人： Takahiro Hiramatsu ,  Hiroyuki Orita ,  Toshiyuki Kawaharamura ,  Shizuo Fujita ,  Takayuki Uchida

IPC分类号： G01R31/26 ,  H01L21/66 ,  H01L31/18 ,  C23C16/40 ,  C23C16/455 ,  H01L31/0216 ,  C23C16/448

摘要： Disclosed herein in a method of forming a metal oxide film, which can provide a high-quality metal oxide film while enhancing production efficiency. The method includes the steps of: turning a raw-material solution having a metallic element into a mist, to obtain a raw-material solution mist; turning a reaction aiding solution into a mist, to obtain an aiding-agent mist; feeding the raw-material solution mist and the aiding-agent mist into a mixing vessel, thereby mixing the raw-material solution mist and the aiding-agent mist, to obtain a mixed mist; and feeding the mixed mist onto a back surface of a substrate which is heated, to obtain a metal oxide film.

公开(公告)号：US11555245B2

公开(公告)日：2023-01-17

申请号：US15737138

申请日：2015-06-18

申请人： Toshiba Mitsubishi-Electric Industrial Systems Corporation ,  Kyoto University ,  Kochi Prefectural Public University Corporation

发明人： Takahiro Hiramatsu ,  Hiroyuki Orita ,  Toshiyuki Kawaharamura ,  Shizuo Fujita ,  Takayuki Uchida

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C14/00 ,  C23C14/08 ,  C23C26/00 ,  C23C16/448 ,  H01L31/0216 ,  H01L21/31 ,  C23C16/40

摘要： In a metal oxide film formation method of the present invention, the following steps are performed. In a solution vessel, a raw-material solution including aluminum as a metallic element is turned into a mist so that a raw-material solution mist is obtained. In a solution vessel provided independently of the solution vessel, a reaction aiding solution including a reaction aiding agent for formation of aluminum oxide is turned into a mist so that an aiding-agent mist is obtained. Then, the raw-material solution mist and the aiding-agent mist are fed to a nozzle provided in a reactor vessel via paths. Thereafter, the raw-material solution mist and the aiding-agent mist are mixed in the nozzle so that a mixed mist is obtained. Then, the mixed mist is fed onto a back surface of a heated P-type silicon substrate.