-
公开(公告)号：US11469297B2
公开(公告)日：2022-10-11
申请号：US17152213
申请日：2021-01-19
IPC分类号： H01L29/06 , H01L21/324 , H01L29/36 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/08 , H01L21/263 , H01L21/265 , H01L29/32 , H01L29/10
摘要： A semiconductor device including: a semiconductor substrate having a first and a second side, and including a donor layer with a doping concentration profile in a depth direction from the first to the second side. The donor layer includes: a first peak, situated at a first distance from the first side of said substrate; a first region adjacent to the first peak and extending in the depth direction from the first peak toward the first side, a second peak in said doping concentration profile, situated at a second distance from the first side of said substrate. Said second distance is less than said first distance and greater than zero; and a second region adjacent to the second peak and extending in the depth direction from the second peak toward the first side of the substrate, which has a doping concentration which is substantially uniform.
-
公开(公告)号：US09722016B2
公开(公告)日：2017-08-01
申请号：US15156427
申请日：2016-05-17
IPC分类号： H01L21/331 , H01L21/425 , H01L21/265 , H01L29/06 , H01L21/263 , H01L29/32 , H01L29/739 , H01L29/10 , H01L29/861 , H01L29/66 , H01L29/36
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
-
公开(公告)号：US10930733B2
公开(公告)日：2021-02-23
申请号：US16429457
申请日：2019-06-03
IPC分类号： H01L29/06 , H01L21/324 , H01L29/36 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/08 , H01L21/263 , H01L21/265 , H01L29/32 , H01L29/10
摘要： Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
-
公开(公告)号：US10056451B2
公开(公告)日：2018-08-21
申请号：US15651612
申请日：2017-07-17
IPC分类号： H01L27/082 , H01L29/167 , H01L21/331 , H01L21/425 , H01L29/06 , H01L21/265 , H01L21/324 , H01L21/263 , H01L29/08 , H01L29/10 , H01L29/861 , H01L29/739 , H01L29/66 , H01L29/36 , H01L29/32
CPC分类号： H01L29/063 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
-
公开(公告)号：US10050106B2
公开(公告)日：2018-08-14
申请号：US15172273
申请日：2016-06-03
IPC分类号： H01L29/06 , H01L21/265 , H01L29/66 , H01L29/739 , H01L29/15 , H01L21/324 , H01L29/10 , H01L21/263 , H01L29/861
摘要： A p+ collector layer is provided in a rear surface of a semiconductor substrate which will be an n− drift layer and an n+ field stop layer is provided in a region which is deeper than the p+ collector layer formed on the rear surface side. A front surface element structure is formed on the front surface of the semiconductor substrate and then protons are radiated to the rear surface of the semiconductor substrate at an acceleration voltage corresponding to the depth at which the n+ field stop layer is formed. A first annealing process is performed at an annealing temperature corresponding to the proton irradiation to change the protons into donors, thereby forming a field stop layer. Then, annealing is performed using annealing conditions suitable for the conditions of a plurality of proton irradiation processes to recover each crystal defect formed by each proton irradiation process.
-
6.发明授权公开(公告)号：US09812561B2
公开(公告)日：2017-11-07
申请号：US15070429
申请日：2016-03-15
IPC分类号： H01L21/332 , H01L29/739 , H01L29/08 , H01L29/36 , H01L29/66 , H01L21/265 , H01L21/285 , H01L21/324 , H01L29/06 , H01L29/10 , H01L29/167 , H01L29/423
CPC分类号： H01L29/7397 , H01L21/26513 , H01L21/2855 , H01L21/324 , H01L29/0615 , H01L29/0619 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/0847 , H01L29/1004 , H01L29/1095 , H01L29/167 , H01L29/36 , H01L29/4236 , H01L29/66348 , H01L29/7395
摘要： In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 μm or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm−3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer.
-
公开(公告)号：US09368577B2
公开(公告)日：2016-06-14
申请号：US14276560
申请日：2014-05-13
IPC分类号： H01L23/58 , H01L29/30 , H01L29/167 , H01L21/04 , H01L21/425 , H01L29/10 , H01L21/263 , H01L29/32 , H01L29/739 , H01L29/861 , H01L29/66
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
摘要翻译： 从作为n漂移层的n型半导体衬底的后表面进行质子照射多次，形成具有比n型半导体衬底的电阻低于n型半导体衬底的n型FS层的n型FS层 n-漂移层。 当多次进行质子照射时，进行下一个质子照射以补偿由于在先前的质子照射之后残留的无序而导致的迁移率的降低。 在这种情况下，第二次或随后的质子照射在由先前的质子照射形成的病症的位置进行。 以这种方式，即使在质子照射和热处理之后，紊乱也减少，并且可以防止诸如漏电流增加的特性劣化。 可以形成包括高浓度氢相关供体层的n型FS层。
-
公开(公告)号：US09276071B2
公开(公告)日：2016-03-01
申请号：US14276546
申请日：2014-05-13
IPC分类号： H01L29/30 , H01L21/425 , H01L21/265 , H01L29/32 , H01L29/36 , H01L29/66 , H01L29/739 , H01L29/861 , H01L29/08 , H01L21/263 , H01L29/10 , H01L29/06 , H01L21/324
CPC分类号： H01L29/063 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： Hydrogen atoms and crystal defects are introduced into an n− semiconductor substrate by proton implantation. The crystal defects are generated in the n− semiconductor substrate by electron beam irradiation before or after the proton implantation. Then, a heat treatment for generating donors is performed. The amount of crystal defects is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects formed by the electron beam irradiation and the proton implantation are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
摘要翻译： 通过质子注入将氢原子和晶体缺陷引入到n-半导体衬底中。 通过在质子注入之前或之后的电子束照射在n半导体衬底中产生晶体缺陷。 然后，进行用于产生供体的热处理。 在用于产生供体的热处理期间适当地控制晶体缺陷的量以增加供体生成速率。 此外，当用于发生供体的热处理结束时，通过电子束照射和质子注入形成的晶体缺陷被回收并被控制到适当量的晶体缺陷。 因此，例如，可以提高击穿电压并减小漏电流。
-
公开(公告)号：US10056449B2
公开(公告)日：2018-08-21
申请号：US15662601
申请日：2017-07-28
IPC分类号： H01L29/00 , H01L27/082 , H01L21/331 , H01L29/06 , H01L29/36 , H01L29/66 , H01L29/861 , H01L29/10 , H01L29/739 , H01L29/32 , H01L21/263
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from rear surface of an n-type semiconductor substrate, which is an n− drift layer, forming an n-type FS layer having lower resistance than the n-type semiconductor substrate in the rear surface of the n− drift layer. When the proton irradiation is performed a plurality of times, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder which remains after the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder is reduced and it is possible to prevent deterioration of characteristics, such as increase in leakage current. It is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
-
公开(公告)号：US09941362B2
公开(公告)日：2018-04-10
申请号：US15334356
申请日：2016-10-26
IPC分类号： H01L29/15 , H01L29/16 , H01L21/265 , H01L29/78 , H01L29/861 , H01L29/868 , H01L21/02 , H01L21/324 , H01L29/06 , H01L29/32 , H01L29/36 , H01L29/66 , H01L29/739
CPC分类号： H01L29/1608 , H01L21/02529 , H01L21/02609 , H01L21/02694 , H01L21/046 , H01L21/265 , H01L21/26506 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/32 , H01L29/36 , H01L29/6606 , H01L29/66068 , H01L29/66348 , H01L29/7397 , H01L29/78 , H01L29/861 , H01L29/868
摘要： A method of manufacturing a silicon carbide semiconductor device. The method includes providing an n-type semiconductor substrate having first and second principal surfaces, introducing an impurity from a first principal surface of the semiconductor substrate at a first position, activating the impurity to form a diffusion layer in the semiconductor substrate at a second position, implanting protons at a third position that is deeper from the first principal surface than the first position, the protons generating crystal defects in a region through which the protons pass, converting by thermal treating the protons into hydrogen induced donors to form an n-type field stop layer at a fourth position deeper from the first principal surface than the second position, reducing by the thermal treating the generated crystal defects to form an n-type crystal defect reduction region, and forming an electrode on the second principal surface after implanting the protons.
-
-
-
-
-
-
-
-
-
搜索结果
27 条记录 (耗时 0.023 秒)