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    METHOD FOR PRODUCING METAL WIRING-CONTAINING LAMINATE, METAL WIRING-CONTAINING LAMINATE, AND SUBSTRATE WITH PLATED LAYER
    5.
    发明申请
    METHOD FOR PRODUCING METAL WIRING-CONTAINING LAMINATE, METAL WIRING-CONTAINING LAMINATE, AND SUBSTRATE WITH PLATED LAYER 审中-公开

    公开(公告)号：US20190029111A1

    公开(公告)日：2019-01-24

    申请号：US16131121

    申请日：2018-09-14

    Applicant: FUJIFILM Corporation

    Inventor： Chika MATSUOKA ,  Takahiko ICHIKI ,  Takehiro KASAHARA ,  Takeshi NARITA

    IPC: H05K1/02 ,  H05K3/18 ,  H05K3/46 ,  B32B15/01

    Abstract: The present invention provides a method for producing a metal wiring-containing laminate which is capable of efficiently producing a metal wiring-containing laminate having a fine metal wiring with low resistance; as well as a metal wiring-containing laminate and a substrate with a plated layer. The method for producing a metal wiring-containing laminate of the present invention includes: a step of forming a photosensitive layer having a functional group capable of interacting with a plating catalyst or a precursor thereof on a substrate; a step of exposing the photosensitive layer in a patternwise manner and subjecting the exposed photosensitive layer to a development treatment to form a plated layer having a groove portion; a step of applying a plating catalyst or a precursor thereof to the plated layer; and a step of subjecting the plated layer, to which the plating catalyst or the precursor thereof has been applied, to a plating treatment to form a metal wiring so as to fill the groove portion.

    PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF USING SAME, OPTICAL SENSOR AND IMAGE SENSOR
    8.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF USING SAME, OPTICAL SENSOR AND IMAGE SENSOR 审中-公开
    光电转换元件及其使用方法，光传感器和图像传感器

    公开(公告)号：US20160013424A1

    公开(公告)日：2016-01-14

    申请号：US14862998

    申请日：2015-09-23

    Applicant: FUJIFILM CORPORATION

    Inventor： Yosuke YAMAMOTO ,  Tomoaki YOSHIOKA ,  Takahiko ICHIKI

    IPC: H01L51/00

    CPC classification number: H01L51/0072 ,  C07D221/18 ,  H01L27/307 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0073 ,  H01L51/0094 ,  H01L51/442

    Abstract: A photoelectric conversion element exhibiting excellent responsiveness and high photoelectric conversion efficiency, a method of using the photoelectric conversion element, and an optical sensor and an image sensor including the photoelectric conversion element are provided. The photoelectric conversion element includes a conductive film, a photoelectric conversion film containing a photoelectric conversion material and a transparent conductive film. The conductive film, the photoelectric conversion film and the transparent conductive film are formed in this order. The photoelectric conversion material contains a compound (A) represented by formula (1):

    Abstract translation: 提供了具有优异的响应性和高的光电转换效率的光电转换元件，使用光电转换元件的方法，以及包括光电转换元件的光学传感器和图像传感器。 光电转换元件包括导电膜，含有光电转换材料的光电转换膜和透明导电膜。 依次形成导电膜，光电转换膜和透明导电膜。 光电转换材料含有式（1）表示的化合物（A）：

    WAFER FOR FORMING IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND IMAGING ELEMENT CHIP
    9.
    发明申请
    WAFER FOR FORMING IMAGING ELEMENT, METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT, AND IMAGING ELEMENT CHIP 有权
    用于形成成像元件的波形，制造固态成像元件的方法和成像元件芯片

    公开(公告)号：US20150048352A1

    公开(公告)日：2015-02-19

    申请号：US14496910

    申请日：2014-09-25

    Applicant: FUJIFILM CORPORATION

    Inventor： Takahiko ICHIKI

    IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44

    CPC classification number: H01L27/307 ,  G01R31/2831 ,  G01R31/2884 ,  H01L27/14603 ,  H01L51/0031 ,  H01L51/441 ,  H01L51/448

    Abstract: A wafer for forming an imaging element has a test pattern and a plurality of imaging element units. The wafer has an imaging region which includes a great number of photoelectric conversion pixels, an imaging element units and a test pattern. The test pattern includes a testing organic photoelectric conversion film and a testing counter electrode having the same configuration and formed at the same time as the organic photoelectric conversion film and a counter electrode, respectively of the photoelectric conversion pixels. A first testing terminal is electrically connected to the undersurface side of the testing organic photoelectric conversion film, and a second testing terminal is electrically connected to the testing counter electrode. A protective film is formed over the entire semiconductor wafer so as to cover the imaging region and the test pattern, and is then partially removed so that a part of each testing terminal is exposed.

    Abstract translation: 用于形成成像元件的晶片具有测试图案和多个成像元件单元。 晶片具有包括大量光电转换像素，成像元件单元和测试图案的成像区域。 测试图案包括测试有机光电转换膜和具有相同配置的测试对电极，并且分别与有机光电转换膜和对电极分别形成在光电转换像素上。 第一测试端子电连接到测试有机光电转换膜的下表面侧，第二测试端子电连接到测试对电极。 在整个半导体晶片上形成保护膜以覆盖成像区域和测试图案，然后被部分地去除，使得每个测试端子的一部分被暴露。

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