Abstract:
Provided are a resist composition capable of forming a pattern having excellent pattern collapse performance, particularly in the formation of an ultrafine pattern (for example, a pattern with a line width 50 nm or less) using the resist composition containing a resin (A) having a repeating unit (a) having an aromatic ring group and a repeating unit (b) having a silicon atom in a side chain, as well as a resist film, a pattern forming method, and a method for manufacturing an electronic device, each using the resist composition.
Abstract:
Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) containing an acid-decomposable repeating unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, a compound (Q) that when exposed to actinic rays or radiation, generates an acid, and a compound (R) expressed by general formula (1) or (2) below.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition containing (A) an acid-decomposable resin, (B) a compound represented by General Formula (b1), and (C) a compound represented by General Formula (c1), in which a ratio of a content of the compound (C) to a content of the compound (B) is from 0.01% by mass to 10% by mass. In the formulae, L represents a single bond or a divalent linking group. A represents a group that decomposes by the action of an acid. B represents a group that decomposes by the action of an acid, a hydroxy group, or a carboxy group. It should be noted that at least one B represents the hydroxy group or the carboxy group. n represents an integer from 1 to 5. X represents an (n+1)-valent linking group. M+ represents a sulfonium ion or an iodonium ion.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (P) of which a solubility in a developer changes by an action of an acid; a compound (A) that has a group (a) having a polarity which changes through decomposition by an action of an acid, and generates an acid (ac1) upon irradiation with actinic rays or radiation; a compound (B) that generates an acid (ac2) having a higher pKa than the acid (ac1) generated from the compound (A), upon irradiation with actinic rays or radiation; and a basic compound (C).
Abstract:
Provided is a pre-rinsing liquid used in a method including forming a resist film including an actinic ray-sensitive or radiation-sensitive composition on a substrate, and irradiating the resist film with actinic rays or radiation to form a pattern on the substrate, and used for subjecting the substrate to a pre-rinsing treatment before applying the actinic ray-sensitive or radiation-sensitive composition onto the substrate. The pre-rinsing liquid satisfies the following conditions (1) and (2): (1) the pre-rinsing liquid includes 80% by mass or more of an organic solvent with respect to the total mass of the pre-rinsing liquid, and (2) the organic solvent is at least one organic solvent selected from the group consisting of alcohols, cyclic ethers, glycol ethers, glycol ether acetates, hydrocarbons, ketones, lactones, and esters.