公开(公告)号：US09680099B2

公开(公告)日：2017-06-13

申请号：US14835317

申请日：2015-08-25

Applicant: FUJIFILM CORPORATION

Inventor： Yoshiki Maehara ,  Yoshihisa Usami

IPC: H01L51/40 ,  H01L21/00 ,  H01L21/42 ,  H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0026 ,  H01L51/0003 ,  H01L51/0558

Abstract: A method for forming an organic semiconductor film includes: forming a solution film by applying a solution containing an organic semiconductor material and a solvent to at least a part of a substrate; and drying the solution film by irradiating at least a part of the solution film with electromagnetic waves with a wavelength of at least 8 μm and an energy density of from 0.1 to 10 J/cm2 on the surface of the solution film before the solution film dries. An organic semiconductor film having good crystallinity can be formed by the method.

公开(公告)号：US10468597B2

公开(公告)日：2019-11-05

申请号：US16041766

申请日：2018-07-21

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Seigo Nakamura ,  Yoshiki Maehara ,  Yuichiro Itai ,  Yoshihisa Usami ,  Junichi Takeya

IPC: H01L51/00 ,  H01L29/786 ,  H01L51/05 ,  H01L51/10 ,  B05C11/04

Abstract: A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 μm or less.

公开(公告)号：US20140174528A1

公开(公告)日：2014-06-26

申请号：US14192157

申请日：2014-02-27

Applicant: FUJIFILM CORPORATION

Inventor： Kohei HIGASHI ,  Yoshiki Maehara ,  Jiro Tsukahara

IPC: H01L51/44

CPC classification number: H01L51/44 ,  H01L51/0026 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0097 ,  H01L51/4253 ,  H01L51/448 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

Abstract: An organic electronic device includes at least an organic-inorganic layered barrier layer, a plastic support, a transparent electrode layer, an organic active layer, a metal electrode layer and an upper sealing member, and contains a strong acid polymer, wherein an n-type oxide semiconductor layer is provided adjacent to the metal electrode layer on the plastic support-side of the metal electrode layer.

Abstract translation: 有机电子器件至少包括有机无机层状阻挡层，塑料载体，透明电极层，有机活性层，金属电极层和上密封构件，并且含有强酸性聚合物，其中， 在金属电极层的塑料支撑侧上与金属电极层相邻设置有氧化物半导体层。

公开(公告)号：US10549311B2

公开(公告)日：2020-02-04

申请号：US16041769

申请日：2018-07-21

Applicant: FUJIFILM Corporation ,  THE UNIVERSITY OF TOKYO

Inventor： Seigo Nakamura ,  Yoshiki Maehara ,  Yuichiro Itai ,  Yoshihisa Usami ,  Junichi Takeya

IPC: B05C11/04 ,  H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/56 ,  H01L27/12 ,  B05C5/02 ,  H01L29/786 ,  B05C5/00

Abstract: A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.

公开(公告)号：US10699907B2

公开(公告)日：2020-06-30

申请号：US15909746

申请日：2018-03-01

Applicant: FUJIFILM Corporation

Inventor： Yoshiki Maehara

IPC: H01L21/28 ,  H01L51/05 ,  H01L51/00 ,  H01L51/10 ,  H01L29/51 ,  H01L29/786 ,  H01L29/08

Abstract: An organic thin film transistor comprises a base material, a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode, and further comprises charge injection layers which are provided between the source electrode and a base material side layer of the source electrode and between the drain electrode and a base material side layer of the drain electrode and have a thickness that decreases in a direction opposite to a direction in which the source electrode and the drain electrode face each other on a side of the source electrode facing the drain electrode and a side of the drain electrode facing the source electrode, and is manufactured by scanning a metal layer with a laser so as to form the source electrode and the drain electrode, and dropwise-adding a solution which becomes the charge injection layers to a laser-scanned portion.

公开(公告)号：US10608119B2

公开(公告)日：2020-03-31

申请号：US16114610

申请日：2018-08-28

Applicant: FUJIFILM Corporation

Inventor： Seigo Nakamura ,  Yoshiki Maehara ,  Yuichiro Itai ,  Yoshihisa Usami

IPC: H01L29/08 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

Abstract: Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

公开(公告)号：US10249733B2

公开(公告)日：2019-04-02

申请号：US15709577

申请日：2017-09-20

Applicant: FUJIFILM Corporation

Inventor： Yoshiki Maehara

IPC: H01L29/66 ,  H01L21/311 ,  H01L29/423 ,  H01L29/786 ,  H01L51/05

Abstract: Provided are an air up type transistor which has high electrical connection reliability and high productivity, and is capable of exhibiting good transistor characteristics while achieving microfabrication, and a manufacturing method of a transistor. A semiconductor layer is formed on an upper surface of a support precursor layer which becomes a semiconductor layer support and then a part of the semiconductor layer is removed to form one or more opening portions from which the support precursor layer is exposed. Two etching protective layers are formed on the semiconductor layer such that the two etching protective layers are separated from each other and at least a part of the opening portion is positioned in a region between the two etching protective layers. A part of the support precursor layer is removed by bringing an etchant into contact with the support precursor layer through the plurality of opening portions, thereby forming a space at a position corresponding to a region between the two etching protective layers so as to form two semiconductor layer supports that are arranged with the space interposed therebetween.