公开(公告)号：US11773292B2

公开(公告)日：2023-10-03

申请号：US17490179

申请日：2021-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/30625

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

公开(公告)号：US11225590B2

公开(公告)日：2022-01-18

申请号：US16649407

申请日：2018-09-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304 ,  H01L21/306

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

公开(公告)号：US20200299546A1

公开(公告)日：2020-09-24

申请号：US16649407

申请日：2018-09-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto NOGUCHI

IPC: C09G1/02

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

公开(公告)号：US11781039B2

公开(公告)日：2023-10-10

申请号：US16473346

申请日：2017-12-22

Applicant: FUJIMI INCORPORATED

Inventor： Tomoaki Ishibashi ,  Hiroki Kon

IPC: C01G1/02 ,  B24B37/04 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/30625

Abstract: Solutions are disclosed for preventing the settling of an abrasive, while maintaining the polishing performance of a polishing composition. Solutions are disclosed for improving the redispersibility of an abrasive while maintaining the polishing performance. Polishing compositions for use in polishing a semiconductor substrate according to the present disclosure include an abrasive, a layered compound, and a dispersion medium.

公开(公告)号：US20230063355A1

公开(公告)日：2023-03-02

申请号：US17975805

申请日：2022-10-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki Oda ,  Hiroki Kon ,  Naoto Noguchi ,  Shinichiro Takami

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US20220017782A1

公开(公告)日：2022-01-20

申请号：US17490179

申请日：2021-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.