公开(公告)号：US11773292B2

公开(公告)日：2023-10-03

申请号：US17490179

申请日：2021-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304 ,  H01L21/306

CPC classification number: C09G1/02 ,  H01L21/304 ,  H01L21/3212 ,  H01L21/30625

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

公开(公告)号：US11339311B2

公开(公告)日：2022-05-24

申请号：US16961619

申请日：2018-12-21

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki Ito ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/306 ,  H01L29/16 ,  H01L29/20

Abstract: The present invention provides a polishing composition with which polishing rates can be effectively improved and which is for polishing works to be polished. The polishing composition comprises water, abrasive grains, an oxidant, and a polishing accelerator. The polishing accelerator comprises at least one metal salt selected from the group consisting of alkali metal salts and alkaline-earth metal salts.

公开(公告)号：US11225590B2

公开(公告)日：2022-01-18

申请号：US16649407

申请日：2018-09-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304 ,  H01L21/306

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.

公开(公告)号：US12146077B2

公开(公告)日：2024-11-19

申请号：US17541881

申请日：2021-12-03

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki Ito ,  Hiroyuki Oda ,  Naoto Noguchi

IPC: C09G1/04 ,  C08K3/26 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

公开(公告)号：US20230063355A1

公开(公告)日：2023-03-02

申请号：US17975805

申请日：2022-10-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki Oda ,  Hiroki Kon ,  Naoto Noguchi ,  Shinichiro Takami

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US11319460B2

公开(公告)日：2022-05-03

申请号：US16495631

申请日：2018-03-19

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki Ito ,  Hiroyuki Oda ,  Naoto Noguchi

IPC: C09G1/04 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16 ,  C08K3/26

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

公开(公告)号：US20220017782A1

公开(公告)日：2022-01-20

申请号：US17490179

申请日：2021-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Hiroki Kon ,  Naoto Noguchi

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/304

Abstract: An object of the present invention is to provide a polishing composition that can achieve both a high polishing removal rate and high surface quality. According to the present invention, provided is a polishing composition for polishing a material to be polished. The polishing composition contains sodium metavanadate, hydrogen peroxide, and silica abrasive. The content C1 of sodium metavanadate is 0.7% to 3.5% by weight, the content C2 of hydrogen peroxide is 0.3% to 3% by weight, and the content C3 of the silica abrasive is 12% to 50% by weight.