公开(公告)号：US12110422B2

公开(公告)日：2024-10-08

申请号：US18529465

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro Nakagai ,  Hiroyuki Oda ,  Yasuaki Ito ,  Shogaku Ide ,  Shinichiro Takami

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

公开(公告)号：US20150014579A1

公开(公告)日：2015-01-15

申请号：US14376547

申请日：2013-02-05

Applicant: FUJIMI INCORPORATED

Inventor： Toshihiro Miwa ,  Hiroyuki Oda ,  Shinichiro Takami ,  Shuhei Takahashi ,  Yutaka Inoue

IPC: H01L21/304 ,  B24B37/04 ,  C09G1/02

CPC classification number: H01L21/304 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/02 ,  C09K13/06 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/3212

Abstract: A polishing composition contains: silicon dioxide having an average primary particle diameter of 40 nm or more as calculated from the specific surface area determined by the BET method; a nitrogen-containing water-soluble polymer; and a basic compound. The value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 1,500,000 when in one liter of the polishing composition, A is defined as the number of silicon dioxide, B is defined as the number of monomer units of the nitrogen-containing water-soluble polymer, and C is defined as the number of molecules of the basic compound. Alternatively, the value of B/A is 1 or more and less than 7,000 and the value of C/A is 5,000 or more and less than 100,000. The polishing composition is used, for example, for polishing a semiconductor substrate.

Abstract translation: 抛光组合物包含：由通过BET法测定的比表面积计算的平均一次粒径为40nm以上的二氧化硅; 含氮水溶性聚合物; 和碱性化合物。 B / A的值为1以上且小于7,000，C / A的值为5000以上且小于1,500,000当1升抛光组合物中，A定义为二氧化硅的数量，B为 定义为含氮水溶性聚合物的单体单元数，C定义为碱性化合物的分子数。 或者，B / A的值为1以上且小于7,000，C / A的值为5,000以上且小于100,000。 抛光组合物例如用于研磨半导体衬底。

公开(公告)号：US12139643B2

公开(公告)日：2024-11-12

申请号：US18529763

申请日：2023-12-05

Applicant: FUJIMI INCORPORATED

Inventor： Yuichiro Nakagai ,  Yasuaki Ito ,  Hiroyuki Oda ,  Shogaku Ide ,  Shinichiro Takami

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/02

Abstract: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]: satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A] satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B] satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

公开(公告)号：US12146077B2

公开(公告)日：2024-11-19

申请号：US17541881

申请日：2021-12-03

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki Ito ,  Hiroyuki Oda ,  Naoto Noguchi

IPC: C09G1/04 ,  C08K3/26 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.

公开(公告)号：US20230063355A1

公开(公告)日：2023-03-02

申请号：US17975805

申请日：2022-10-28

Applicant: FUJIMI INCORPORATED

Inventor： Hiroyuki Oda ,  Hiroki Kon ,  Naoto Noguchi ,  Shinichiro Takami

IPC: C09G1/02 ,  H01L21/304

Abstract: According to the present invention, there is provided a polishing composition used for polishing a gallium compound-based semiconductor substrate. The polishing composition includes a silica abrasive; a compound Cpho having a phosphoric acid group or a phosphonic acid group; and water. In addition, according to the present invention, there is provided a method for polishing a gallium compound-based semiconductor substrate. The method includes a first polishing step in which polishing is performed using a slurry S1 containing an abrasive A1 and water; and a second polishing step in which polishing is performed using a slurry S2 containing an abrasive A2 and water, in this order. The abrasive A2 contains a silica abrasive. The slurry S2 further contains a compound Cpho having a phosphoric acid group or a phosphonic acid group. The slurry S1 does not contain the compound Cpho or a concentration [% by weight] of the compound Cpho in the slurry S1 is lower than a concentration [% by weight] of the compound Cpho in the slurry S2.

公开(公告)号：US11319460B2

公开(公告)日：2022-05-03

申请号：US16495631

申请日：2018-03-19

Applicant: FUJIMI INCORPORATED

Inventor： Yasuaki Ito ,  Hiroyuki Oda ,  Naoto Noguchi

IPC: C09G1/04 ,  C08K5/14 ,  H01L21/304 ,  H01L29/16 ,  C08K3/26

Abstract: Provided is a polishing composition that can effectively improve a polishing removal rate. According to the present invention, a polishing composition for polishing a polishing target material is provided. The polishing composition contains water, an oxidant, and a polishing removal accelerator, and does not contain abrasive. At least one metal salt selected from the group consisting of an alkali metal salt and an alkaline earth metal salt is contained as the polishing removal accelerator.