公开(公告)号：US20250092284A1

公开(公告)日：2025-03-20

申请号：US18808773

申请日：2024-08-19

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/306

Abstract: Means for effectively removing hafnium oxide can be provided. A polishing composition contains (a) an anionic abrasive, (b) a nitrogen-containing additive, and (c) a dispersing medium, wherein the pH of the polishing composition is 2 or more and less than 5, and the (b) nitrogen-containing additive contains at least one selected from the group consisting of the following (i), the following (ii), and the following (iii); (i) a compound selected from the group consisting of a guanidine compound having a specific structure, an amidine compound having a specific structure, and salts thereof; (ii) a cyclic amino acid; and (iii) a sulfonic acid compound having an amino group.

公开(公告)号：US20190077991A1

公开(公告)日：2019-03-14

申请号：US15765572

申请日：2016-09-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA ,  Takahiro UMEDA ,  Shota SUZUKI

IPC: C09G1/02 ,  H01L21/3105

Abstract: The present invention provides a means for further improving a polishing speed in a polishing composition.The polishing composition includes: an abrasive grain; hydrogen peroxide; and water, wherein the abrasive grain has an average secondary particle size of 20 nm or more to 150 nm or less, a molar concentration M (mmol/Kg) of the hydrogen peroxide and a total surface area of the abrasive grain satisfy a relationship of Formula 1 below and Formula 2 below, and a pH is 10 or more to 14 or less. M 0  (Formula 2) (wherein S represents a total surface area (m2) of abrasive grains present in 1 Kg of the polishing composition, and Log(S) represents a natural logarithm of S).

公开(公告)号：US20220275246A1

公开(公告)日：2022-09-01

申请号：US17679415

申请日：2022-02-24

Applicant: FUJIMI INCORPORATED

Inventor： Daiki ITO ,  Toshio SHINODA

IPC: C09G1/02 ,  C09G1/18

Abstract: There is provided a polishing composition capable of improving the polishing removal rate of silicon nitride to polish silicon oxide and silicon nitride at the same polishing removal rate and polishing silicon nitride with a small number of defects.
A polishing composition contains: abrasives having a positive zeta potential; and a cyclic compound having a mother nucleus with a ring structure and two or more anionic functional groups bonded to the mother nucleus, in which the abrasives contain silica. This polishing composition is used for polishing objects to be polished containing silicon oxide and silicon nitride.

公开(公告)号：US20190085208A1

公开(公告)日：2019-03-21

申请号：US16129665

申请日：2018-09-12

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA ,  Aya NISHIMURA

IPC: C09G1/02 ,  C07D257/06

Abstract: To provide a polishing composition capable of polishing objects to be polished, such as simple substance silicon, silicon compounds, and metals, at a high polishing removal rate.The polishing composition contains a polishing removal accelerator containing a compound having a ring structure configured to contain four or more nitrogen atoms, abrasives, and a liquid medium.

公开(公告)号：US20220220339A1

公开(公告)日：2022-07-14

申请号：US17568827

申请日：2022-01-05

Applicant: FUJIMI INCORPORATED

Inventor： Daiki ITO ,  Toshio SHINODA

IPC: C09G1/02 ,  B24B37/04 ,  C09K3/14

Abstract: There are provided a polishing composition capable of improving the polishing removal rate of a TEOS film, a method for manufacturing the polishing composition, and a polishing method.
A polishing composition contains cationized colloidal silica chemically surface-modified with an amino silane coupling agent and an anionic surfactant, in which the pH value is larger than 3 and smaller than 6.

公开(公告)号：US20200308450A1

公开(公告)日：2020-10-01

申请号：US16823484

申请日：2020-03-19

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA ,  Daiki ITO

IPC: C09G1/02 ,  C09G1/18

Abstract: The object of the present invention is to provide a novel polishing composition capable of polishing two or more kinds of objects to be polished at a similar speed and at a high speed.A polishing composition used for polishing an object to be polished, the polishing composition including: abrasive grains; an organic compound; and a liquid carrier, in which the number of silanol groups per unit surface area of the abrasive grains is more than 0/nm2 and equal to or less than 2.5/nm2, and the organic compound has a phosphonic acid group or a salt group thereof.

公开(公告)号：US20170136600A1

公开(公告)日：2017-05-18

申请号：US15127294

申请日：2015-02-26

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA

IPC: B24B37/04 ,  C09K3/14 ,  H01L21/3105 ,  C09G1/02

CPC classification number: B24B37/044 ,  C08K3/14 ,  C08K3/22 ,  C08K3/36 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

Abstract: The present invention provides a polishing composition with which differences in height of a SiN film can be sufficiently removed.The present invention is a polishing composition for use in polishing a polishing object having a surface which is positively charged at a pH of less than 6, containing water, abrasive grains, and an anionic copolymer having a specific unit structure, and having a pH of less than 6, wherein the anionic copolymer has at least two acidic groups having different acidities.