公开(公告)号：US20180215952A1

公开(公告)日：2018-08-02

申请号：US15505672

申请日：2015-07-02

Applicant: FUJIMI INCORPORATED

Inventor： Shogo ONISHI ,  Takahiro UMEDA

IPC: C09G1/02

CPC classification number: C09G1/02 ,  B24B37/00 ,  B24B37/044 ,  C09K3/1409 ,  H01L21/304 ,  H01L21/3212

Abstract: The present invention provides a polishing composition which can achieve a high polishing speed for the layer containing copper and at the same time, can suppress dissolution of the layer containing cobalt, in polishing an object to be polished having a layer containing copper and a layer containing cobalt.Disclosed is a polishing composition used for polishing an object to be polished having a layer containing copper and a layer containing cobalt, which comprises an oxidizing agent, and at least one cobalt dissolution inhibitor selected from the group consisting of a compound having a nitrogen-containing 5-membered ring structure, and an aminocarboxylic acid having two or more carboxyl groups.

公开(公告)号：US20160136784A1

公开(公告)日：2016-05-19

申请号：US15004424

申请日：2016-01-22

Applicant: Fujimi Incorporated

Inventor： Tatsuhiko HIRANO ,  Shuichi TAMADA ,  Takahiro UMEDA

IPC: B24C1/08 ,  C23F3/06 ,  C09G1/18 ,  H01L21/02 ,  C09G1/16 ,  C09G1/02

CPC classification number: B24C1/08 ,  C08G73/00 ,  C09G1/02 ,  C09G1/16 ,  C09G1/18 ,  C23F3/06 ,  H01L21/02074 ,  H01L21/3212

Abstract: A polishing composition contains a polishing accelerator, a water-soluble polymer including a constitutional unit originating from a polymerizable compound having a guanidine structure such as dicyandiamide, and an oxidant. The water-soluble polymer may be a water-soluble polymer including a constitutional unit originating from dicyandiamide and a constitutional unit originating from formaldehyde, a diamine or a polyamine.

Abstract translation: 抛光组合物包含抛光促进剂，包含源自具有诸如双氰胺等胍结构的聚合性化合物的结构单元的水溶性聚合物和氧化剂。 水溶性聚合物可以是包含源自双氰胺的结构单元和来自甲醛，二胺或多胺的结构单元的水溶性聚合物。

公开(公告)号：US20150315418A1

公开(公告)日：2015-11-05

申请号：US14440216

申请日：2013-09-30

Applicant: FUJIMI INCORPORATED

Inventor： Takahiro UMEDA ,  Shogo ONISHI ,  Takeshi YOSHIKAWA ,  Yoshihiro KACHI

IPC: C09G1/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

Abstract: [Problem] Provided is a polishing composition that can sufficiently maintain a high polishing rate for a barrier layer and an insulating film and suppress the occurrence of a surface defect such as erosion or fang.[Solution] Provided is a polishing composition which is used in the application to polish a polishing object having a barrier layer, a metal wiring layer and an insulating film, the polishing composition including abrasive grains, an oxidant, a metal corrosion inhibitor, a pH adjusting agent and water, in which an aspect ratio of abrasive grains is 1.22 or less and a ratio D90/D10 of a diameter D90 of particles when a cumulative particle weight from the fine particle side reaches 90% of the total particle weight to a diameter D10 of particles when the cumulative particle weight from the fine particle side reaches 10% of the total particle weight of the entire particles is 1.5 or more in a particle size distribution of the abrasive grains determined by a laser diffraction scattering method.

Abstract translation: [问题]提供一种可以充分保持阻挡层和绝缘膜的高抛光速度并抑制诸如腐蚀或a牙等表面缺陷的发生的抛光组合物。 [解决方案]提供一种抛光组合物，其用于抛光具有阻挡层，金属布线层和绝缘膜的抛光对象的抛光组合物，所述抛光组合物包括磨粒，氧化剂，金属腐蚀抑制剂，pH 调整剂和水，其中当颗粒的一个颗粒的累积粒子数达到总颗粒重量的90％至直径的90％时，磨粒的纵横比为1.22或更小，颗粒直径D90的比D90 / D10 当通过激光衍射散射法确定的磨粒的粒度分布中，当微细颗粒侧的累积粒子重量达到整个颗粒的总颗粒重量的10％时颗粒的D10为1.5以上。

公开(公告)号：US20190077991A1

公开(公告)日：2019-03-14

申请号：US15765572

申请日：2016-09-08

Applicant: FUJIMI INCORPORATED

Inventor： Toshio SHINODA ,  Takahiro UMEDA ,  Shota SUZUKI

IPC: C09G1/02 ,  H01L21/3105

Abstract: The present invention provides a means for further improving a polishing speed in a polishing composition.The polishing composition includes: an abrasive grain; hydrogen peroxide; and water, wherein the abrasive grain has an average secondary particle size of 20 nm or more to 150 nm or less, a molar concentration M (mmol/Kg) of the hydrogen peroxide and a total surface area of the abrasive grain satisfy a relationship of Formula 1 below and Formula 2 below, and a pH is 10 or more to 14 or less. M 0  (Formula 2) (wherein S represents a total surface area (m2) of abrasive grains present in 1 Kg of the polishing composition, and Log(S) represents a natural logarithm of S).