公开(公告)号：US20130215922A1

公开(公告)日：2013-08-22

申请号：US13855353

申请日：2013-04-02

Applicant: Furukawa Electric Co., Ltd.

Inventor： Hitoshi SHIMIZU ,  Yasumasa KAWAKITA

IPC: H01S5/183 ,  G02B5/08

CPC classification number: H01S5/18308 ,  G02B5/0816 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/181 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/18369 ,  H01S2304/04 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: An electronic device comprising a multilayer semiconductor structure formed by a periodic structure having a first semiconductor layer and a second semiconductor layer, wherein in at least a portion of the multilayer semiconductor structure, the first semiconductor layer and the second semiconductor layer have different conduction types. The first semiconductor layer and the second semiconductor layer have different refractive indexes, and the multilayer semiconductor structure functions as a multilayer reflective mirror. As a result, an electronic device, a surface emitting laser, a surface emitting laser array, a light source, and an optical module with decreased parasitic capacitance can be realized.

Abstract translation: 一种电子器件，包括由具有第一半导体层和第二半导体层的周期性结构形成的多层半导体结构，其中在所述多层半导体结构的至少一部分中，所述第一半导体层和所述第二半导体层具有不同的导电类型。 第一半导体层和第二半导体层具有不同的折射率，并且多层半导体结构用作多层反射镜。 结果，可以实现电子器件，表面发射激光器，表面发射激光器阵列，光源和具有降低的寄生电容的光学模块。

公开(公告)号：US20150131684A1

公开(公告)日：2015-05-14

申请号：US14556933

申请日：2014-12-01

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Tomofumi KISE ,  Suguru IMAI ,  Masaki FUNABASHI ,  Hitoshi SHIMIZU

IPC: H01S5/042 ,  H01S5/42

CPC classification number: H01S5/0427 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/0651 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/42 ,  H01S5/423

Abstract: A surface-emitting laser apparatus includes: a surface-emitting laser element; and a driving apparatus supplying a modulation-driving current to the surface-emitting laser element. The modulation-driving current is intensity-modulated to vary across a value of a bias current. The number of lateral modes of laser oscillation of the surface-emitting laser element changes from one to three at maximum in accordance with a value of the modulation-driving current. Among changing currents at which number of the lateral modes of the laser oscillation of the surface-emitting laser element changes, if a first changing current is defined at which the number of the lateral mode of the laser oscillation changes from one to two, the driving apparatus supplies the modulation-driving current to the surface-emitting laser element. The modulation-driving current is set so that a value of the first changing current is not between the bias current and a maximum value of the modulation-driving current.

Abstract translation: 表面发射激光装置包括：表面发射激光元件; 以及向表面发射激光元件提供调制驱动电流的驱动装置。 调制驱动电流被强度调制以在偏置电流的值上变化。 根据调制驱动电流的值，表面发射激光元件的激光振荡的横向模式的数量最多从一个变化到三个。 在表面发射激光器元件的激光振荡的横向模式的数量变化的变化电流中，如果定义激光振荡器的横向模式的数量从1变化到2的第一变化电流，则驱动 装置将调制驱动电流提供给表面发射激光元件。 调制驱动电流被设定为使得第一变化电流的值不在偏置电流和调制驱动电流的最大值之间。

公开(公告)号：US20130250993A1

公开(公告)日：2013-09-26

申请号：US13898067

申请日：2013-05-20

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yasumasa KAWAKITA ,  Takeo KAGEYAMA ,  Hitoshi SHIMIZU ,  Hirotatsu ISHII

IPC: H01S5/183

CPC classification number: H01S5/18341 ,  B82Y20/00 ,  G11B7/123 ,  G11B7/127 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01S5/0014 ,  H01S5/0071 ,  H01S5/0208 ,  H01S5/02228 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/02292 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/305 ,  H01S5/3201 ,  H01S5/34306 ,  H01S5/423 ,  H01L2924/00014

Abstract: Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.

Abstract translation: 包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。