摘要:
An integrated semiconductor memory device includes a first memory zone, a second memory zone, first address connections and a second address connection. A second address signal present at the second address connection specifies the access to the first or second memory zone, whereas it is specified via first address signals at the first address connections which memory cell is accessed within the first or second memory zone. In a first memory configuration, all address connections are driven externally with address signals and the access to a memory cell in the first or second memory zone is controlled. In a second memory configuration, only the first address connections are driven externally whereas a signaling bit in a mode register regulates the access to the first or second memory zone. This provides for access to the second memory zone even if there is no possibility of externally driving the second address connection.
摘要:
An integrated semiconductor memory device includes a first memory zone, a second memory zone, first address connections and a second address connection. A second address signal present at the second address connection specifies the access to the first or second memory zone, whereas it is specified via first address signals at the first address connections which memory cell is accessed within the first or second memory zone. In a first memory configuration, all address connections are driven externally with address signals and the access to a memory cell in the first or second memory zone is controlled. In a second memory configuration, only the first address connections are driven externally whereas a signaling bit in a mode register regulates the access to the first or second memory zone. This provides for access to the second memory zone even if there is no possibility of externally driving the second address connection.
摘要:
An integrated memory includes memory cells arranged in a memory cell array along word lines and bit lines. One of the bit lines can be connected to a data line by a respective one of a plurality of switches. The memory contains column select lines. One of the column select lines in each case connected to a plurality of the switches for driving, in an activated state, in order to connect a number of bit lines to a same number of data lines. An access controller is connected to the column select lines and can be operated in a test operating mode such that a plurality of the column select lines are activated in the event of a memory cell access. The writing of test data to the memory cell array in a test operating mode can thus be optimized in accordance with the invention.
摘要:
An integrated circuit includes a first circuit component, a second circuit component, and an external terminal for making contact with the circuit. The first circuit component is connected to the external terminal via the second component. A bridging circuit connects the first circuit component to the external terminal and can be activated by a test mode signal. In the active state, the bridging circuit connects the external terminal to the first circuit component while bridging the second circuit component, while it is nonconducting in the deactivated state. Circuit components integrated in the semiconductor chip can be electrically measured nondestructively via activatable switches. Circuit components that lie between the external terminal and the device to be measured can be excluded from the measurement by bridging circuits. The method also makes it possible to measure a plurality of integrated devices in parallel or serially.
摘要:
A circuit for setting one of a plurality of organization forms of an integrated circuit includes a detector circuit connected to an external connection of the integrated circuit. The external connection in at least one of the organization forms can be used for external communication of the integrated circuit. A signal can be impressed into a signal path connected to the external connection by the detector circuit. As a consequence, an output signal is generated at an output of the detector circuit. A control circuit sets one of the organization forms and receives the output signal of the detector circuit. One of the organization forms is set by the control circuit depending on the state of the output signal of the detector circuit. A module with a detector circuit can identify that organization form of the organization forms in which it is operated in the application.
摘要:
An integrated semiconductor memory (100) comprises a controllable voltage generator (30) for precharging bit lines (BL) of a memory cell array (10) to a precharge voltage (VEQ). During the read-out of a first and second memory state of memory cells (SZ) which are connected to the bit lines, a first and second signal swing (ΔUH, ΔUL) occurs on the bit lines, as a result of which the bit lines are charged to a first and a second voltage potential (V1, V2). For the purpose of precharging the bit lines to the precharge voltage (VEQ), a first equalize current (I1) and a second equalize current (I2) are fed onto the bit lines by the controllable voltage generator (30), the current intensity of said currents in each case being measured by a detector circuit (60). A control circuit (20) alters the precharge voltage (VEQ) until the first and second equalize currents (I1, I2) have identical magnitudes. The precharge voltage is then centered with respect to the first and second voltage potentials (V1, V2).
摘要:
An integrated circuit includes a first circuit component, a second circuit component, and an external terminal for making contact with the circuit. The first circuit component is connected to the external terminal via the second component. A bridging circuit connects the first circuit component to the external terminal and can be activated by a test mode signal. In the active state, the bridging circuit connects the external terminal to the first circuit component while bridging the second circuit component, while it is nonconducting in the deactivated state. Circuit components integrated in the semiconductor chip can be electrically measured nondestructively via activatable switches. Circuit components that lie between the external terminal and the device to be measured can be excluded from the measurement by bridging circuits. The method also makes it possible to measure a plurality of integrated devices in parallel or serially.
摘要:
An integrated memory includes memory cells arranged in a memory cell array along word lines and bit lines. One of the bit lines can be connected to a data line by a respective one of a plurality of switches. The memory contains column select lines. One of the column select lines in each case connected to a plurality of the switches for driving, in an activated state, in order to connect a number of bit lines to a same number of data lines. An access controller is connected to the column select lines and can be operated in a test operating mode such that a plurality of the column select lines are activated in the event of a memory cell access. The writing of test data to the memory cell array in a test operating mode can thus be optimized in accordance with the invention.
摘要:
A circuit for setting one of a plurality of organization forms of an integrated circuit comprises a detector circuit connected to an external connection of the integrated circuit. The external connection in at least one of the organization forms can be used for external communication of the integrated circuit. A signal can be impressed into a signal path connected to the external connection by the detector circuit. As a consequence, an output signal is generated at an output of the detector circuit. A control circuit sets one of the organization forms and receives the output signal of the detector circuit. One of the organization forms is set by the control circuit depending on the state of the output signal of the detector circuit. A module with a circuit according to the invention can identify that organization form of the organization forms in which it is operated in the application.