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    Phase change memory cell with tubular heater and manufacturing method thereof
    5.
    发明授权
    Phase change memory cell with tubular heater and manufacturing method thereof 有权
    具有管状加热器的相变存储单元及其制造方法

    公开(公告)号：US07439536B2

    公开(公告)日：2008-10-21

    申请号：US11398858

    申请日：2006-04-06

    申请人： Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

    发明人： Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact area is in the form of a frame that has a width of sublithographic extent and, preferably, a sublithographic maximum external dimension. The heating element includes a hollow elongated portion which is arranged in contact with the phase change region.

    摘要翻译： 相变存储单元包括相变材料的相变区域，与该相变区域接触的电阻材料的加热元件，以及形成在与该加热元件的接触区域的所述相变区域中的存储元件 。 接触区域是具有亚光刻范围宽度的框架形式，最好是亚光刻最大外部尺寸。 加热元件包括与相变区域接触地布置的中空细长部分。

    Phase change memory cell with tubular heater and manufacturing method thereof
    6.
    发明申请
    Phase change memory cell with tubular heater and manufacturing method thereof 有权
    具有管状加热器的相变存储单元及其制造方法

    公开(公告)号：US20070051936A1

    公开(公告)日：2007-03-08

    申请号：US11398858

    申请日：2006-04-06

    申请人： Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

    发明人： Fabio Pellizzer ,  Enrico Varesi ,  Agostino Pirovano

    IPC分类号： H01L47/00

    CPC分类号： H01L45/06 ,  G11C13/0004 ,  H01L27/2445 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heating element. The contact area is in the form of a frame that has a width of sublithographic extent and, preferably, a sublithographic maximum external dimension. The heating element includes a hollow elongated portion which is arranged in contact with the phase change region.

    摘要翻译： 相变存储单元包括相变材料的相变区域，与该相变区域接触的电阻材料的加热元件，以及形成在与该加热元件的接触区域的所述相变区域中的存储元件 。 接触区域是具有亚光刻范围宽度的框架形式，最好是亚光刻最大外部尺寸。 加热元件包括与相变区域接触地布置的中空细长部分。

    PROCESS FOR MANUFACTURING AN ARRAY OF CELLS INCLUDING SELECTION BIPOLAR JUNCTION TRANSISTORS WITH PROJECTING CONDUCTION REGIONS
    7.
    发明申请
    PROCESS FOR MANUFACTURING AN ARRAY OF CELLS INCLUDING SELECTION BIPOLAR JUNCTION TRANSISTORS WITH PROJECTING CONDUCTION REGIONS 审中-公开
    用于制造具有投影导电区域的选择性双极晶体管的电池阵列的方法

    公开(公告)号：US20090014709A1

    公开(公告)日：2009-01-15

    申请号：US12169452

    申请日：2008-07-08

    申请人： Fabio Pellizzer ,  Augusto Benvenuti ,  Paolo Cappelletti ,  Roberto Bez ,  Agostino Pirovano

    发明人： Fabio Pellizzer ,  Augusto Benvenuti ,  Paolo Cappelletti ,  Roberto Bez ,  Agostino Pirovano

    IPC分类号： H01L29/06 ,  H01L21/82

    CPC分类号： H01L27/1022 ,  H01L27/2445 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233

    摘要： A process manufactures an array of cells in a body of semiconductor material wherein a common conduction region of a first conductivity type and a plurality of shared control regions, of a second conductivity type, are formed in the body. The shared control regions extend on the common conduction region and are laterally delimited by insulating regions. Then, a grid-like layer is formed on the body to delimit a first plurality of empty regions directly overlying the body and conductive regions of semiconductor material and the first conductivity type are formed by filling the first plurality of empty regions, each conductive region forming, together with the common conduction region and an own shared control region, a bipolar junction transistor.

    摘要翻译： 一种方法制造半导体材料体中的单元阵列，其中在体内形成有第二导电类型的共同导电区域和多个第二导电类型的共用控制区域。 共享控制区域在公共导电区域上延伸并由绝缘区域侧向限定。 然后，在主体上形成网状层，以界定直接覆盖在主体和半导体材料的导电区域上的第一多个空区域，并且通过填充第一多个空区域形成第一导电类型，每个导电区域形成 与公共导电区域和自己的共用控制区域一起，双极结型晶体管。