Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differential Resistance and Method for Making These Nanostructures
    1.
    发明申请
    Nanostructures With 0, 1, 2, and 3 Dimensions, With Negative Differential Resistance and Method for Making These Nanostructures 审中-公开
    具有0,1,2和3尺寸,具有负差分电阻的纳米结构和制造这些纳米结构的方法

    公开(公告)号:US20100072472A1

    公开(公告)日:2010-03-25

    申请号:US11922970

    申请日:2006-06-29

    IPC分类号: H01L29/86 H01L21/04

    摘要: Nanostructures with 0, 1, 2 and 3 dimensions, with negative differential resistance and method for making these nanostructures. A nanostructure according to the invention may notably be used in nanoelectronics. It comprises at least one structure (32) or at least one plurality of said at least one structure, at the surface of a silicon carbide substrate (30), the structure being selected from quantum dots, atomic segments, atomic lines and clusters, and at least one metal deposit (34), this metal deposit covering at least the structure or at least the plurality of said at least one structure, or of the combination of two or more of these nanostructures with 0, 1, 2 or 3 dimensions.

    摘要翻译: 具有0,1,2和3维度的纳米结构,具有负微分电阻和制备这些纳米结构的方法。 根据本发明的纳米结构可以显着地用于纳米电子学。 它在碳化硅衬底(30)的表面处包括至少一个结构(32)或至少一个多个所述至少一个结构,该结构选自量子点,原子段,原子线和簇,以及 至少一个金属沉积物(34),该金属沉积物至少覆盖结构或至少多个所述至少一个结构,或者这些纳米结构中的两个或更多个的组合具有0,1,2或3维度。

    Photon-emission scanning tunneling microscopy
    4.
    发明授权
    Photon-emission scanning tunneling microscopy 失效
    光子发射扫描隧道显微镜

    公开(公告)号:US08006315B2

    公开(公告)日:2011-08-23

    申请号:US12087103

    申请日:2006-12-20

    IPC分类号: G01N13/00 G12B1/00

    CPC分类号: G01Q60/12

    摘要: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

    摘要翻译: 本发明涉及一种间接间隙半导体衬底,其间隙大于硅的间隙,优选大于1.5eV,用于通过光子发射扫描隧道显微镜对样品进行成像,以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地,间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。

    Photon-Emission Scanning Tunneling Microscopy
    6.
    发明申请
    Photon-Emission Scanning Tunneling Microscopy 失效
    光子发射扫描隧道显微镜

    公开(公告)号:US20090300805A1

    公开(公告)日:2009-12-03

    申请号:US12087103

    申请日:2006-12-20

    IPC分类号: G12B21/04 H01L29/15

    CPC分类号: G01Q60/12

    摘要: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.

    摘要翻译: 本发明涉及一种间接间隙半导体衬底,其间隙大于硅的间隙,优选大于1.5eV,用于通过光子发射扫描隧道显微镜对样品进行成像,以及光子发射扫描隧道 使用这种间接间隙半导体衬底的成像方法。 有利地,间接间隙半导体衬底由碳化硅制成。 本发明还涉及用于实现根据本发明的成像方法的装置。

    Electrooptical transducer utilizing photoluminescent conjugate oligomers
    8.
    发明授权
    Electrooptical transducer utilizing photoluminescent conjugate oligomers 失效
    使用光致发光共轭寡聚体的电光传感器

    公开(公告)号:US5831259A

    公开(公告)日:1998-11-03

    申请号:US750027

    申请日:1996-11-25

    申请人: Fabrice Charra

    发明人: Fabrice Charra

    摘要: A high impedance electrooptical transducer, such as for use in an optical output sensor. The transducer includes an electrosensitive element that emits photoluminescence radiation when illuminated by an excitation radiation. The electrosensitive element includes conjugate photoluminescent oligomers. The photoluminescence efficiency of the conjugate oligomers varies in the presence of an electrical field.

    摘要翻译: PCT No.PCT / FR95 / 00852 Sec。 371日期:1996年11月25日 102(e)日期1996年11月25日PCT提交1995年6月27日PCT公布。 公开号WO96 / 00904 日期1996年1月11日一种高阻抗电光传感器,例如用于光输出传感器。 换能器包括当被激发辐射照射时发出光致发光辐射的电敏元件。 电敏元件包括共轭光致发光低聚物。 共轭低聚物的光致发光效率在存在电场的情况下变化。