公开(公告)号：US08723172B2

公开(公告)日：2014-05-13

申请号：US12699058

申请日：2010-02-03

申请人： Fang-An Shu ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan ,  Tung-Liang Lin

发明人： Fang-An Shu ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan ,  Tung-Liang Lin

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/04 ,  H01L31/00 ,  H01L21/00 ,  H01L21/16

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.

摘要翻译： 提供了包括薄膜晶体管阵列基板，透明电极基板和设置在其间的显示介质层的显示装置。 薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。 在每个薄膜晶体管中，栅极电极和栅极绝缘层依次设置在衬底上，并且栅电极被栅极绝缘层覆盖。 氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。 每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。 由于氧化物半导体层由透明材料制成，所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。 因此，能够降低反射型显示装置的制造工序的成本和耗时。

公开(公告)号：US20110095285A1

公开(公告)日：2011-04-28

申请号：US12699058

申请日：2010-02-03

申请人： Fang-An SHU ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan ,  Tung-Liang Lin

发明人： Fang-An SHU ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan ,  Tung-Liang Lin

IPC分类号： H01L33/00 ,  H01L29/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A display device including a thin film transistor array substrate, transparent electrode substrate and a display medium layer disposed therebetween is provided. The thin film transistor array substrate includes a plurality of thin film transistors with an oxide semiconductor layer respectively. In each thin film transistor, a gate electrode and a gate insulating layer are disposed on a substrate sequentially and the gate electrode is covered by the gate insulating layer. The oxide semiconductor layer is conformably covering on the gate insulating layer and has a channel region located above the gate electrode. A source electrode and a drain electrode of each thin film transistor are disposed on the oxide semiconductor layer and at one side of the channel region respectively. Since the oxide semiconductor layer is made of transparent material, the patterning process of the oxide semiconductor layer can be omitted during the manufacturing process of the reflective display device. Thus, the cost and time-consumed of manufacturing process of the reflective display device can be reduced.

摘要翻译： 提供了包括薄膜晶体管阵列基板，透明电极基板和设置在其间的显示介质层的显示装置。 薄膜晶体管阵列基板分别具有多个具有氧化物半导体层的薄膜晶体管。 在每个薄膜晶体管中，栅极电极和栅极绝缘层依次设置在衬底上，并且栅电极被栅极绝缘层覆盖。 氧化物半导体层被顺应地覆盖在栅绝缘层上并且具有位于栅电极上方的沟道区。 每个薄膜晶体管的源电极和漏电极分别设置在氧化物半导体层和沟道区的一侧。 由于氧化物半导体层由透明材料制成，所以在反射式显示装置的制造过程中可以省略氧化物半导体层的构图工艺。 因此，能够降低反射型显示装置的制造工序的成本和耗时。

公开(公告)号：US08242495B2

公开(公告)日：2012-08-14

申请号：US12699033

申请日：2010-02-02

申请人： Fang-An Shu ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan

发明人： Fang-An Shu ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/01 ,  H01L27/12

CPC分类号： H01L31/105 ,  H01L27/14659 ,  H01L31/1085 ,  H01L31/115

摘要： A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.

摘要翻译： 数字X射线检测面板包括波长转换层和光电检测板。 波长转换层被配置为将X射线转换成可见光。 光电检测板设置在波长转换层的下方。 光电检测板包括基板和设置在基板上并排列成阵列的多个光电检测单元。 每个光电检测单元包括薄膜晶体管和与薄膜晶体管电连接的光电二极管。 薄膜晶体管具有氧化物半导体层。 数字X射线检测面板可以避免薄膜晶体管中的光电流，从而提高数字X射线检测面板的检测精度。 还提供了一种用于制造数字X射线检测面板的方法。

公开(公告)号：US20110024739A1

公开(公告)日：2011-02-03

申请号：US12699033

申请日：2010-02-02

申请人： Fang-An SHU ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan

发明人： Fang-An SHU ,  Lee-Tyng Chen ,  Henry Wang ,  Wei-Chou Lan

IPC分类号： H01L31/08 ,  H01L31/18

CPC分类号： H01L31/105 ,  H01L27/14659 ,  H01L31/1085 ,  H01L31/115

摘要： A digital X-ray detecting panel includes a wavelength transforming layer and a photoelectric detecting plate. The wavelength transforming layer is configured for transforming X-ray into visible light. The photoelectric detecting plate is disposed under the wavelength transforming layer. The photoelectric detecting plate includes a substrate and a number of photoelectric detecting units disposed on the substrate and arranged in an array. Each of the photoelectric detecting units includes a thin film transistor and a photodiode electrically connected to the thin film transistor. The thin film transistor has an oxide semiconductor layer. The digital X-ray detecting panel can avoid a photocurrent in the thin film transistor, and thereby improving detecting accuracy of the digital X-ray detecting panel. A method for manufacturing the digital X-ray detecting panel is also provided.

摘要翻译： 数字X射线检测面板包括波长转换层和光电检测板。 波长转换层被配置为将X射线转换成可见光。 光电检测板设置在波长转换层的下方。 光电检测板包括基板和设置在基板上并排列成阵列的多个光电检测单元。 每个光电检测单元包括薄膜晶体管和与薄膜晶体管电连接的光电二极管。 薄膜晶体管具有氧化物半导体层。 数字X射线检测面板可以避免薄膜晶体管中的光电流，从而提高数字X射线检测面板的检测精度。 还提供了一种用于制造数字X射线检测面板的方法。

公开(公告)号：US20090283808A1

公开(公告)日：2009-11-19

申请号：US12509562

申请日：2009-07-27

申请人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

发明人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

IPC分类号： H01L31/112

CPC分类号： H01L31/1055 ,  H01L31/03762

摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.

摘要翻译： 光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由光致抗蚀剂制成以减少侧漏电流。

公开(公告)号：US07582499B2

公开(公告)日：2009-09-01

申请号：US12122151

申请日：2008-05-16

申请人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

发明人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

IPC分类号： H01L21/00 ,  H01L21/8234 ,  H01L21/8222

CPC分类号： H01L31/1055 ,  H01L31/03762

摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of photoresist to reduce a side leakage current.

摘要翻译： 光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由光致抗蚀剂制成以减少侧漏电流。

公开(公告)号：US20090085077A1

公开(公告)日：2009-04-02

申请号：US12122151

申请日：2008-05-16

申请人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

发明人： Henry Wang ,  Wei-Chou Lan ,  Lee-Tyng Chen

IPC分类号： H01L31/113 ,  H01L21/00 ,  H01L21/8236

CPC分类号： H01L31/1055 ,  H01L31/03762

摘要： A photo sensor has an insulator layer for covering a diode stack, and the insulator layer is made of phtoresist to reduce a side leakage current.

摘要翻译： 光电传感器具有用于覆盖二极管叠层的绝缘体层，并且绝缘体层由钝化膜制成以减少侧漏电流。

公开(公告)号：US20090085076A1

公开(公告)日：2009-04-02

申请号：US12115765

申请日：2008-05-06

申请人： Wei-Chou Lan ,  Henry Wang ,  Lee-Tyng Chen

发明人： Wei-Chou Lan ,  Henry Wang ,  Lee-Tyng Chen

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1443 ,  H01L29/78669 ,  H01L31/1055

摘要： According to a method of manufacturing photo sensor, a diode can be formed by one lithography step. In addition, the source/drain is arranged on a gate dielectric layer to avoid the conventional plug structure. Moreover, a diode stack is formed on one of the source/drain to simplify the structure of the photo sensor.

摘要翻译： 根据制造光电传感器的方法，可以通过一个光刻步骤形成二极管。 此外，源极/漏极被布置在栅极电介质层上以避免常规的插塞结构。 此外，在源极/漏极之一上形成二极管叠层，以简化光电传感器的结构。

公开(公告)号：US08748222B2

公开(公告)日：2014-06-10

申请号：US12774562

申请日：2010-05-05

申请人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

发明人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/10 ,  H01L21/34

CPC分类号： H01L29/78693 ,  H01L21/34 ,  H01L29/1083 ,  H01L29/78609

摘要： A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

摘要翻译： 制造氧化物薄膜晶体管的方法包括以下步骤：分别形成栅极，漏极，源电极和氧化物半导体层。 氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。 该方法还包括沉积氧化硅的介电层的步骤，并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。 一氧化二氮的流量在10至200标准立方厘米每分钟（SCCM）的范围内。 通过上述方法制造的氧化物薄膜晶体管具有漏电流低，迁移率高的优点，其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。

公开(公告)号：US08389310B2

公开(公告)日：2013-03-05

申请号：US12699063

申请日：2010-02-03

申请人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

发明人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

IPC分类号： H01L21/00 ,  H01L51/40

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

摘要翻译： 制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。 在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。 通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。 本发明还提供一种显示装置的制造方法。 可以提高显示装置的显示质量。