公开(公告)号：US07939367B1

公开(公告)日：2011-05-10

申请号：US12338783

申请日：2008-12-18

申请人： Firooz Nasser-Faili ,  Niels Christopher Engdahl

发明人： Firooz Nasser-Faili ,  Niels Christopher Engdahl

IPC分类号： H01L21/00

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02304

摘要： The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process. The reduction of soot allows for better adhesion between the adhesion layer and diamond layer of the layer stack.

摘要翻译： 本发明是通过化学气相沉积（CVD）和通过该方法制备的制品在衬底上生长关键粘附金刚石层的方法。 衬底可以是涂覆有粘合层的化合物半导体。 粘附层优选为诸如氮化硅，碳化硅，氮化铝或非晶硅的电介质，以列举一些主要实例。 粘合层的典型厚度为1微米或更小。 所得到的层叠层（例如，基底层，粘合层和金刚石层）在结构上没有塑性变形，并且金刚石层与电介质粘合层良好粘附，使得其可进一步加工，例如通过增加厚度 金刚石层到所需的水平，或者通过使其进一步的薄膜制造工艺步骤。 除了防止层叠体的塑性变形之外，该过程还减少了CVD工艺期间烟灰的形成。 烟灰的减少允许粘附层和层叠层的金刚石层之间的更好的粘附。

公开(公告)号：US20150279945A1

公开(公告)日：2015-10-01

申请号：US14432721

申请日：2013-10-25

申请人： Daniel FRANCIS ,  Dubravko BABIC ,  Firooz NASSER-FAILI ,  Felix EJECKAM ,  Quentin DIDUCK ,  Joseph SMART ,  Kristopher MATTHEWS ,  Frank LOWE ,  ELEMENT SIX TECHNOLOGIES US CORPORATION

发明人： Daniel Francis ,  Dubravko Babic ,  Firooz Nasser-Faili ,  Felix Ejeckham ,  Quentin Diduck ,  Joseph Smart ,  Kristopher Matthews ,  Frank Lowe

IPC分类号： H01L29/32 ,  H01L29/20 ,  H01L29/04 ,  H01L29/16 ,  H01L21/02 ,  H01L21/683

CPC分类号： H01L29/32 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/6835 ,  H01L21/76254 ,  H01L29/04 ,  H01L29/1602 ,  H01L29/2003 ,  H01L2221/68318 ,  H01L2221/6834 ,  H01L2221/68372

摘要： Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time. The methods as described herein can be used to fabricate working semiconductor wafer structures which have a low concentration of dislocation defects throughout the active semiconductor layer structure and which do not comprise highly dislocated strain-matching layers which are present in the native semiconductor growth substrate

摘要翻译： 描述了制造半导体晶片结构的方法，其具有改善的寿命和可靠性。 所述方法包括将有源半导体层结构从天然非晶格匹配半导体生长衬底转移到工作衬底，其中应变匹配层以及可选地一部分有源半导体层结构被去除。 在某些实施例中，将有源半导体层结构附着到工作衬底的工艺包括在高温下退火一段特定的时间。 本文所述的方法可用于制造在整个有源半导体层结构中具有低浓度位错缺陷并且不包含存在于天然半导体生长衬底中的高位错应变匹配层的工作半导体晶片结构

公开(公告)号：US6013191A

公开(公告)日：2000-01-11

申请号：US958474

申请日：1997-10-27

申请人： Firooz Nasser-Faili ,  John A. Herb ,  Miguel A. Monreno

发明人： Firooz Nasser-Faili ,  John A. Herb ,  Miguel A. Monreno

IPC分类号： C30B33/12 ,  C30B29/04 ,  C30B33/00 ,  H01L21/302

CPC分类号： C30B33/00 ,  C30B29/04

摘要： A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm.sup.2 and about 1.1 watts/cm.sup.2 for a first duration, and maintaining temperature in the reactor at between about 200.degree. to about 400.degree.. The method may alternatively comprise disposing a sputter gas such as Ar,O.sub.2 or N.sub.2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm.sup.2 and about 7.5 watts/cm.sup.2 for a first duration, and performing a sputter etch, disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm.sup.2 and about 3.0 watts/cm.sup.2 for a second duration.

摘要翻译： 一种用于在反应器中用低功率密度等离子体抛光金刚石膜的表面的方法，该方法包括在反应器中配置O 2气体和氟化气体如SF 6，NF 3和C 2 F 6，向反应器提供功率密度 在反应器中第一持续时间在约1.0瓦特/平方厘米至约1.1瓦特/平方厘米之间，并且将反应器中的温度维持在约200至约400度之间。 该方法可以可选地包括在反应器中设置诸如Ar，O 2或N 2的溅射气体，为反应器提供电力，使得反应器中的功率密度在第一持续时间内在约3.0瓦/ cm 2和约7.5瓦/ cm 2之间 ，并进行溅射蚀刻，将O 2气体和诸如SF 6，NF 3和C 2 F 6的氟化气体置于反应器中，并向反应器提供动力，使得反应器中的功率密度在约1.5瓦/ cm2至约3.0之间 瓦/平方厘米。