-
1.发明申请SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTUIRNG THE SAME 审中-公开具有改进的可靠性和操作寿命的半导体器件及其制造方法公开(公告)号：US20150279945A1
公开(公告)日：2015-10-01
申请号：US14432721
申请日：2013-10-25
申请人： Daniel FRANCIS , Dubravko BABIC , Firooz NASSER-FAILI , Felix EJECKAM , Quentin DIDUCK , Joseph SMART , Kristopher MATTHEWS , Frank LOWE , ELEMENT SIX TECHNOLOGIES US CORPORATION
发明人： Daniel Francis , Dubravko Babic , Firooz Nasser-Faili , Felix Ejeckham , Quentin Diduck , Joseph Smart , Kristopher Matthews , Frank Lowe
CPC分类号： H01L29/32 , H01L21/02527 , H01L21/0262 , H01L21/6835 , H01L21/76254 , H01L29/04 , H01L29/1602 , H01L29/2003 , H01L2221/68318 , H01L2221/6834 , H01L2221/68372
摘要： Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time. The methods as described herein can be used to fabricate working semiconductor wafer structures which have a low concentration of dislocation defects throughout the active semiconductor layer structure and which do not comprise highly dislocated strain-matching layers which are present in the native semiconductor growth substrate
摘要翻译： 描述了制造半导体晶片结构的方法，其具有改善的寿命和可靠性。 所述方法包括将有源半导体层结构从天然非晶格匹配半导体生长衬底转移到工作衬底，其中应变匹配层以及可选地一部分有源半导体层结构被去除。 在某些实施例中，将有源半导体层结构附着到工作衬底的工艺包括在高温下退火一段特定的时间。 本文所述的方法可用于制造在整个有源半导体层结构中具有低浓度位错缺陷并且不包含存在于天然半导体生长衬底中的高位错应变匹配层的工作半导体晶片结构
-
2.发明授权Semiconductor devices having gallium nitride epilayers on diamond substrates 有权在金刚石衬底上具有氮化镓外延层的半导体器件公开(公告)号：US08283672B2
公开(公告)日：2012-10-09
申请号：US12484098
申请日：2009-06-12
IPC分类号： H01L31/0264 , H01L29/778 , H01L29/20
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
3.发明申请COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS AND METHOD OF MANUFACTURING THEREOF 失效具有质量优良半导体层的复合波长及其制造方法公开(公告)号：US20080296586A1
公开(公告)日：2008-12-04
申请号：US12018131
申请日：2008-01-22
CPC分类号： G01T1/24 , H01L21/02389 , H01L21/02444 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02587 , H01L21/02664 , H01L21/76254 , H01L27/14694 , H01L33/0079 , Y10T428/30
摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。
-
4.发明授权Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates 有权在金刚石衬底上制造具有氮化镓外延层的半导体器件的方法公开(公告)号：US08283189B2
公开(公告)日：2012-10-09
申请号：US12569486
申请日：2009-09-29
IPC分类号： H01L21/00
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
5.发明申请METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES 有权在金刚石基板上制造氮化硅薄膜的半导体器件的方法公开(公告)号：US20100105166A1
公开(公告)日：2010-04-29
申请号：US12569486
申请日：2009-09-29
IPC分类号： H01L21/04
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
6.发明申请公开(公告)号：US20130183798A1
公开(公告)日：2013-07-18
申请号：US13608902
申请日：2012-09-10
IPC分类号： H01L21/04
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
公开(公告)号：US20070269604A1
公开(公告)日：2007-11-22
申请号：US11654359
申请日：2007-01-16
申请人： Daniel Francis , Felix Ejeckam , Shabbir Bashar , Dubravko Babic
发明人： Daniel Francis , Felix Ejeckam , Shabbir Bashar , Dubravko Babic
IPC分类号： B05D1/40
CPC分类号： H01L21/4871 , H01L21/0237 , H01L21/02381 , H01L21/02395 , H01L21/02527 , H01L21/02664 , H01L21/2007 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： A method for making diamond heat sinks where the diamond is smooth and is not bowed. Smooth diamond is created by depositing synthetic diamond onto a smooth substrate. The substrate subsequently removed revealing a diamond surface that is smooth. Bow in the diamond layers resulting from intrinsic stress can be reduced by bonding two diamond films with similar intrinsic stress with the final growth surfaces facing each other.
摘要翻译： 金刚石散热器的制造方法，其中钻石光滑并且不弯曲。 平滑的金刚石是通过将合成金刚石沉积在光滑的基底上产生的。 随后去除衬底露出平滑的金刚石表面。 通过将具有相似固有应力的两个金刚石膜与相互面对的最终生长表面结合，可以减少由固有应力产生的金刚石层中的弓。
-
8.发明授权Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer 有权使用中间成核层制造在金刚石衬底上具有氮化镓外延层的半导体器件的方法公开(公告)号：US08945966B2
公开(公告)日：2015-02-03
申请号：US13608902
申请日：2012-09-10
IPC分类号： H01L21/00 , H01L21/336 , H01L21/04 , H01L21/02 , H01L23/373 , C30B7/00
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
9.发明授权Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof 失效具有散装质量半导体层的复合晶片及其制造方法公开(公告)号：US07943485B2
公开(公告)日：2011-05-17
申请号：US12018131
申请日：2008-01-22
CPC分类号： G01T1/24 , H01L21/02389 , H01L21/02444 , H01L21/0245 , H01L21/02488 , H01L21/02502 , H01L21/02527 , H01L21/02587 , H01L21/02664 , H01L21/76254 , H01L27/14694 , H01L33/0079 , Y10T428/30
摘要： Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate.
摘要翻译： 公开了以合成金刚石晶片原子连接的薄的高质量半导体膜制造复合晶片的方法。 合成金刚石基底是通过将合成金刚石沉积到沉积在体半导体晶片上的成核层上而制成的，所述成核层已准备好允许将薄半导体膜与剩余的体半导体晶片分离。 剩下的半导体晶片可以重新使用。 合成金刚石基底用作散热器和机械基板。
-
10.发明申请公开(公告)号：US20100001293A1
公开(公告)日：2010-01-07
申请号：US12484098
申请日：2009-06-12
IPC分类号： H01L29/02
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译： 公开了将宽间隙半导体与合成金刚石基底集成的方法。 通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。 所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。 金刚石衬底用作散热器或机械衬底。
-
-
-
-
-
-
-
-
-
搜索结果
54 条记录 (耗时 0.041 秒)
