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公开(公告)号：US20240138164A1
公开(公告)日：2024-04-25
申请号：US18277157
申请日：2022-02-11
发明人： Joseph Jonathan Berry , Le Chen , Axel Finn Palmstrom , Tze-Bin Song , Vera Steinmann , Natasha Teran , Aravamuthan Varadarajan , Xueping Yi , Zhibo Zhao , Kai Zhu
摘要： Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.
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公开(公告)号：US20240138163A1
公开(公告)日：2024-04-25
申请号：US18277153
申请日：2022-02-11
发明人： Joseph Jonathan Berry , Le Chen , Axel Finn Palmstrom , Tze-Bin Song , Vera Steinmann , Natasha Teran , Aravamuthan Varadarajan , Mengjin Yang , Xueping Yi , Zhibo Zhao , Kai Zhu
摘要： Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.
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公开(公告)号：US20240237370A9
公开(公告)日：2024-07-11
申请号：US18277153
申请日：2022-02-11
发明人： Joseph Jonathan Berry , Le Chen , Axel Finn Palmstrom , Tze-Bin Song , Vera Steinmann , Natasha Teran , Aravamuthan Varadarajan , Mengjin Yang , Xueping Yi , Zhibo Zhao , Kai Zhu
摘要： Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.
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公开(公告)号：US20240237371A9
公开(公告)日：2024-07-11
申请号：US18277157
申请日：2022-02-11
发明人： Joseph Jonathan Berry , Le Chen , Axel Finn Palmstrom , Tze-Bin Song , Vera Steinmann , Natasha Teran , Aravamuthan Varadarajan , Xueping Yi , Zhibo Zhao , Kai Zhu
摘要： Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.
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公开(公告)号：US12119416B2
公开(公告)日：2024-10-15
申请号：US17287988
申请日：2019-10-23
申请人： First Solar, Inc.
发明人： Le Chen , Sachit Grover , Jason Kephart , Sergei Kniajanski , Chungho Lee , Xiaoping Li , Feng Liao , Dingyuan Lu , Rajni Mallick , Wenming Wang , Gang Xiong , Wei Zhang
IPC分类号： H01L31/0216 , H01L31/0296 , H01L31/073
CPC分类号： H01L31/02167 , H01L31/02963 , H01L31/073
摘要： According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.
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公开(公告)号：US20230082682A1
公开(公告)日：2023-03-16
申请号：US17801093
申请日：2021-02-19
申请人： First Solar, Inc.
发明人： Le Chen , David Ho , Xiaoping Li , Rick Powell , Tze-Bin Song , Vera Steinmann , Aravamuthan Varadarajan , Dirk Weiss , Gang Xiong , Zhibo Zhao
IPC分类号： H01G9/00 , C23C14/06 , C23C14/58 , C23C14/50 , C23C14/22 , H01G9/20 , H01L51/00 , H01L51/42 , H01L51/44
摘要： Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
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公开(公告)号：US12112897B2
公开(公告)日：2024-10-08
申请号：US17801093
申请日：2021-02-19
申请人： First Solar, Inc.
发明人： Le Chen , David Ho , Xiaoping Li , Rick Powell , Tze-Bin Song , Vera Steinmann , Aravamuthan Varadarajan , Dirk Weiss , Gang Xiong , Zhibo Zhao
IPC分类号： H01G9/00 , C23C14/06 , C23C14/22 , C23C14/50 , C23C14/58 , H01G9/20 , H10K30/30 , H10K30/40 , H10K30/82 , H10K71/16 , H10K85/30
CPC分类号： H01G9/0036 , C23C14/0694 , C23C14/228 , C23C14/50 , C23C14/5806 , H01G9/2009 , H10K30/30 , H10K30/40 , H10K30/82 , H10K71/164 , H10K85/30
摘要： Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.
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公开(公告)号：US20210376177A1
公开(公告)日：2021-12-02
申请号：US17287988
申请日：2019-10-23
申请人： First Solar, Inc.
发明人： Le Chen , Sachit Grover , Jason Kephart , Sergei Kniajanski , Chungho Lee , Xiaoping Li , Feng Liao , Dingyuan Lu , Rajni Mallick , Wenming Wang , Gang Xiong , Wei Zhang
IPC分类号： H01L31/073 , H01L31/0296
摘要： According to the embodiments provided herein, a photovoltaic device can include a buffer layer adjacent to an absorber layer doped p-type with a group V dopant. The buffer layer can have a plurality of layers compatible with group V dopants.
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