公开(公告)号：US20050161760A1

公开(公告)日：2005-07-28

申请号：US10507757

申请日：2003-03-12

申请人： Francois Templier ,  Thierry Billon ,  Nicolas Daval

发明人： Francois Templier ,  Thierry Billon ,  Nicolas Daval

IPC分类号： H01L21/04 ,  H01L21/338 ,  H01L29/24 ,  H01L29/47 ,  H01L29/786 ,  H01L29/812 ,  H01L29/872 ,  H01L27/095 ,  H01L29/15

CPC分类号： H01L29/6606 ,  H01L21/0475 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/78684 ,  H01L29/8126 ,  H01L29/872 ,  Y10S438/931

摘要： The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.

摘要翻译： 本发明涉及一种功率接合装置，其包括具有通过绝缘体（14）的掩埋层与固体载体（12）绝缘的碳化硅层（16）的SiCOI型衬底，并且包括至少一个肖特基接触 在第一金属层（40）和碳化硅（16）的表面层之间，构成阳极的第一金属层（30）。

公开(公告)号：US20050258483A1

公开(公告)日：2005-11-24

申请号：US10526641

申请日：2003-09-01

申请人： Francois Templier ,  Lea Di Cioccio ,  Thierry Billon ,  Fabrice Letertre

发明人： Francois Templier ,  Lea Di Cioccio ,  Thierry Billon ,  Fabrice Letertre

IPC分类号： H01L29/20 ,  H01L29/24 ,  H01L29/47 ,  H01L29/868 ,  H01L29/872 ,  H01L29/76

CPC分类号： H01L29/872 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/868

摘要： The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15). Means (16, 17) of electrically connecting the device are provided, firstly on the epitaxied semiconducting material, and secondly on the second face of the support substrate, an electrical connection through the electrically insulating layer and said electrically conducting means of the support substrate electrically connecting the epitaxied semiconducting material (14, 15) to the electrically connecting means (17) provided on the second face of the support substrate (11).

摘要翻译： 本发明涉及由半导体材料制成的功率半导体器件，该半导体材料包括在层叠结构（10）上，包括转移到支撑衬底（11）的第一面上的半导体材料层（13），并通过一个 电绝缘层（12），所述支撑衬底包括在所述第一面和第二面之间的导电装置，所述转移的半导体材料层（13）用作所述表面半导体材料（14,15）的外延支撑。 提供电连接器件的装置（16,17），首先在表面半导体材料上，其次在支撑衬底的第二面上，通过电绝缘层和支撑衬底的所述导电装置的电连接电 将所述表面半导体材料（14,15）连接到设置在所述支撑基板（11）的第二面上的所述电连接装置（17）。

公开(公告)号：US20060125057A1

公开(公告)日：2006-06-15

申请号：US10526657

申请日：2003-09-01

申请人： Lea Di Cioccio ,  Francois Templier ,  Thierry Billon ,  Fabrice Letertre

发明人： Lea Di Cioccio ,  Francois Templier ,  Thierry Billon ,  Fabrice Letertre

IPC分类号： H01L31/0312 ,  H01L29/06

CPC分类号： H01L21/7602 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007

摘要： The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.

摘要翻译： 本发明涉及一种SiCOI型复合衬底制造方法，包括以下步骤：提供包含Si或SiC载体（1）的初始衬底，所述Si或SiC载体（1）承载SiO 2层（2），其中SiC的薄层（3）被转移， 在SiC的薄层（3）上SiC（4）的外延。 如果载体（1）由SiC组成，则从1350°C开始，在1450℃的温度下进行外延生长，以在转移的薄6H或4H多型层（3）上分别获得6H或4H多型外延（4） 如果载体（1）由Si或SiC由1350℃组成，则在转移的薄3C多型层（3）上获得3C多型外延（4），以获得6H或4H多型外延（4） 如果载体（1）由Si组成，则分别转移薄的6H或4H多型层（3）。

公开(公告)号：US08899758B2

公开(公告)日：2014-12-02

申请号：US12818275

申请日：2010-06-18

申请人： Francois Templier ,  Bruno Mourey

发明人： Francois Templier ,  Bruno Mourey

IPC分类号： G03B21/06 ,  G03B21/58

CPC分类号： G03B21/58 ,  G03B21/56 ,  G03B21/62

摘要： This overhead projector comprises: a screen (4) equipped with a frame and a translucent panel tautened on this frame, the translucent panel having a front face (20) on which the images are displayed and a rear face (8) on which the images are projected, the screen (4) being capable of being shifted between a retracted position and a stretched position in which the surface area of the panel is increased by at least 10% relatively to the surface area of the panel in its retracted position an apparatus (5) for projecting images on the rear face of the translucent panel this apparatus (5) being capable of adapting the size of the projected images to the retracted position as well as to the stretched position of the screen.

摘要翻译： 该高架投影仪包括：配备有框架的屏幕（4）和在该框架上加固的半透明面板，所述半透明面板具有其上显示图像的正面（20）和其上的图像（8） 投影屏幕（4）能够在缩回位置和拉伸位置之间移动，其中面板的表面面积相对于面板在缩回位置的表面积增加至少10％，装置 （5），用于在该半透明面板的背面上投影图像，该装置能够使投影图像的大小适应缩回位置以及屏幕的拉伸位置。

公开(公告)号：US20120205614A1

公开(公告)日：2012-08-16

申请号：US13503480

申请日：2010-10-19

申请人： Francois Templier ,  Laurent Clavelier ,  Marc Rabarot

发明人： Francois Templier ,  Laurent Clavelier ,  Marc Rabarot

IPC分类号： H01L33/04 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L27/156 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

摘要翻译： 一种用于制造发射像素屏幕的方法包括形成有源像素矩阵，电极形成层沿着该有源像素阵列运行并具有根据分布布置的像素，形成各向异性衬底，该各向异性衬底包括由平行的纳米线构成的一组发光二极管， 绝缘基体相对于衬底厚度横向地具有不同于像素分布的密度高于像素密度的密度，通过将平行纳米线的子组连接到第一端而将衬底连接到有源像素矩阵，以分离 根据矩阵中的像素的分布在电极形成层中限定的像素电极，并且将另一端的子组连接到公共电极，并且通过使基板的纳米线 排列在子组之间，不起作用。

公开(公告)号：US20100321276A1

公开(公告)日：2010-12-23

申请号：US12821229

申请日：2010-06-23

申请人： Francois Templier ,  Thimothee Jobert ,  Edouard Siekierski

发明人： Francois Templier ,  Thimothee Jobert ,  Edouard Siekierski

IPC分类号： G09G5/00

CPC分类号： G06F3/1446 ,  G09G3/2092 ,  G09G2320/0693 ,  G09G2320/08 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/0471 ,  G09G2340/0478

摘要： This display unit comprises screens (4, 6, 8, 10) positioned in parallel to a plane of display between a retracted position in which at least two screens overlap to reduce a cumulated display surface and a fully deployed position in which the overlapping of the screens is reduced or eliminated to increase the cumulated display surface, and a computer (12) capable of commanding the display of a complete image on the totality of the cumulated display surface both in the retracted position and in the fully deployed position.

摘要翻译： 该显示单元包括在缩回位置之间平行于显示平面定位的屏幕（4,6,8,10），其中至少两个屏幕重叠在一起，以减少累积的显示表面和完全展开位置，在该位置 屏幕被减少或消除以增加累积的显示表面;以及计算机（12），其能够在缩回位置和完全展开位置中指示累积显示表面的整体上的完整图像的显示。

公开(公告)号：US08334818B2

公开(公告)日：2012-12-18

申请号：US12821229

申请日：2010-06-23

申请人： Francois Templier ,  Thimothee Jobert ,  Edouard Siekierski

发明人： Francois Templier ,  Thimothee Jobert ,  Edouard Siekierski

IPC分类号： G09G5/00

CPC分类号： G06F3/1446 ,  G09G3/2092 ,  G09G2320/0693 ,  G09G2320/08 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/0471 ,  G09G2340/0478

摘要： This display unit comprises screens (4, 6, 8, 10) positioned in parallel to a plane of display between a retracted position in which at least two screens overlap to reduce a cumulated display surface and a fully deployed position in which the overlapping of the screens is reduced or eliminated to increase the cumulated display surface, and a computer (12) capable of commanding the display of a complete image on the totality of the cumulated display surface both in the retracted position and in the fully deployed position.

摘要翻译： 该显示单元包括在缩回位置之间平行于显示平面定位的屏幕（4,6,8,10），其中至少两个屏幕重叠在一起，以减少累积的显示表面和完全展开位置，在该位置 屏幕被减少或消除以增加累积的显示表面;以及计算机（12），其能够在缩回位置和完全展开位置中指示累积显示表面的整体上的完整图像的显示。

公开(公告)号：US08890111B2

公开(公告)日：2014-11-18

申请号：US13503480

申请日：2010-10-19

申请人： Francois Templier ,  Laurent Clavelier ,  Marc Rabarot

发明人： Francois Templier ,  Laurent Clavelier ,  Marc Rabarot

IPC分类号： H01L33/04 ,  H01L27/15 ,  H01L33/08 ,  H01L33/18 ,  H01L33/00 ,  B82Y20/00

CPC分类号： H01L27/156 ,  B82Y20/00 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing an emissive pixel screen includes forming an active pixel matrix along which an electrode forming layer runs and having pixels arranged according to a distribution, forming an anisotropic substrate that includes a set of light emitting diodes constituted by parallel nanowires and arranged in an insulating matrix transversely with respect to a substrate thickness and having a density higher than a density of the pixels irrespective of the pixel distribution, connecting the substrate to the active pixel matrix by connecting only sub-groups of the parallel nanowires by a first end to separate pixel electrodes defined in the electrode forming layer according to the distribution of the pixels in the matrix, and connecting the sub-groups, by another end, to a common electrode, and delimiting the sub-groups by rendering the nanowires of the substrate that are arranged between the sub-groups emissively inactive.

摘要翻译： 一种用于制造发射像素屏幕的方法包括形成有源像素矩阵，电极形成层沿着该有源像素阵列运行并具有根据分布布置的像素，形成各向异性衬底，该各向异性衬底包括由平行的纳米线构成的一组发光二极管， 绝缘基体相对于衬底厚度横向地具有高于像素密度的密度，而不管像素分布如何，通过将平行纳米线的子组连接到第一端而将衬底连接到有源像素矩阵，以分离 根据矩阵中的像素的分布在电极形成层中限定的像素电极，并且将另一端的子组连接到公共电极，并且通过使基板的纳米线 排列在子组之间，不起作用。

公开(公告)号：US20100321642A1

公开(公告)日：2010-12-23

申请号：US12818275

申请日：2010-06-18

申请人： Francois Templier ,  Bruno Mourey

发明人： Francois Templier ,  Bruno Mourey

IPC分类号： G03B21/132

CPC分类号： G03B21/58 ,  G03B21/56 ,  G03B21/62

摘要： This overhead projector comprises: a screen (4) equipped with a frame and a translucent panel tautened on this frame, the translucent panel having a front face (20) on which the images are displayed and a rear face (8) on which the images are projected, the screen (4) being capable of being shifted between a retracted position and a stretched position in which the surface area of the panel is increased by at least 10% relatively to the surface area of the panel in its retracted position an apparatus (5) for projecting images on the rear face of the translucent panel this apparatus (5) being capable of adapting the size of the projected images to the retracted position as well as to the stretched position of the screen.

摘要翻译： 该高架投影仪包括：配备有框架的屏幕（4）和在该框架上加固的半透明面板，所述半透明面板具有其上显示图像的正面（20）和其上的图像（8） 投影屏幕（4）能够在缩回位置和拉伸位置之间移动，其中面板的表面面积相对于面板在缩回位置的表面积增加至少10％，装置 （5），用于在该半透明面板的背面上投影图像，该装置能够使投影图像的大小适应缩回位置以及屏幕的拉伸位置。