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公开(公告)号：US06265734B1
公开(公告)日：2001-07-24
申请号：US09068138
申请日：1998-05-01
IPC分类号： H01L3300
CPC分类号： H01S5/347 , B82Y20/00 , H01L33/0087 , H01L33/04 , H01L33/06 , H01L33/105 , H01L33/28 , H01L33/40 , H01S5/0421 , H01S5/18341 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S5/327
摘要： Component having an active layer (4), barrier layers (3, 5), and, if appropriate, a buffer layer (2), of which layers at least one contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTE/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate (1) of Gaps, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer (2) including a beryllium-containing chalcogenide.
摘要翻译： 具有活性层（4），阻挡层（3,5）以及如果适当的缓冲层（2）的组分，其中至少一层含有含铍的硫族化物。 活性层是多层，例如由BeTE / ZnSe或BeTe / ZnCdSe制成的超晶格。 当在间隙的衬底（1）上使用ZnSe的有源层时，通过包括铍的假级梯度缓冲层（2）在III-V材料和II-VI材料之间实现与低电阻的匹配 含硫属化物。
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2.发明授权Method of producing a II-VI semiconductor component containing selenium and/or sulrfur 失效制备含有硒和/或磺胺的II-VI半导体组分的方法公开(公告)号：US06399473B1
公开(公告)日：2002-06-04
申请号：US09480758
申请日：2000-01-10
申请人： Frank Fischer , Matthias Keller , Thomas Litz , Gottfried Landwehr , Hans-Jürgen Lugauer , Andreas Waag , Markus Keim
发明人： Frank Fischer , Matthias Keller , Thomas Litz , Gottfried Landwehr , Hans-Jürgen Lugauer , Andreas Waag , Markus Keim
IPC分类号： H01L2128
CPC分类号： H01L21/02395 , H01L21/02439 , H01L21/0248 , H01L21/02485 , H01L21/02505 , H01L21/02557 , H01L21/0256 , H01L21/02631 , H01S5/327
摘要： A II-VI semiconductor component is produced with an active layer sequence having at least one II-VI semiconductor layer containing Se and/or S on a substrate. First, an Se-free II-VI interlayer based on BeTe is grown epitaxially on the substrate in an essentially Se-free and S-free first epitaxy chamber. The active layer sequence is then grown epitaxially on the Se-free II-VI semiconductor layer.
摘要翻译： 制备具有在衬底上具有含有Se和/或S的至少一个II-VI半导体层的有源层序列的II-VI半导体元件。 首先，在基本上不含Se的无S的第一外延室中，在衬底上外延生长基于BeTe的无Se的II-VI中间层。 然后在无Se的II-VI半导体层上外延生长活性层序列。
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公开(公告)号：US06495859B2
公开(公告)日：2002-12-17
申请号：US09876768
申请日：2001-06-07
IPC分类号： H01L3300
CPC分类号： H01S5/347 , B82Y20/00 , H01L33/0087 , H01L33/04 , H01L33/06 , H01L33/105 , H01L33/28 , H01L33/40 , H01S5/0421 , H01S5/18341 , H01S5/3063 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S5/327
摘要： A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeTe/ZnCdSe. When using an active layer of ZnSe on a substrate of GaAs, matching with low electrical resistance is achieved between the III-V materials and the II-VI materials by means of a pseudo-graded buffer layer including a beryllium-containing chalcogenide.
摘要翻译： 组分具有活性层，阻挡层，并且如果合适，具有缓冲层，并且这些层中的至少一层含有含铍的硫族化物。 有源层是多层，例如由BeTe / ZnSe或BeTe / ZnCdSe制成的超晶格。 当在GaAs衬底上使用ZnSe的活性层时，通过含有铍的硫族化物的假梯度缓冲层，在III-V材料和II-VI材料之间实现与低电阻的匹配。
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4.发明授权II-VI semiconductor component having at least one junction between a layer containing Se and a layer containing BeTe, and process for producing the junction 失效II-VI族半导体元件在含有Se的层和含有BeTe的层之间具有至少一个结，以及用于制造该结的工艺公开(公告)号：US06372536B1
公开(公告)日：2002-04-16
申请号：US09480756
申请日：2000-01-10
申请人： Frank Fischer , Andreas Waag , Thierry Baron , Gottfried Landwehr , Thomas Litz , Günter Reuscher , Markus Keim , Ulrich Zehnder , Hans-Peter Steinbrück , Mario Nagelstrasser , Hans-Jürgen Lugauer
发明人： Frank Fischer , Andreas Waag , Thierry Baron , Gottfried Landwehr , Thomas Litz , Günter Reuscher , Markus Keim , Ulrich Zehnder , Hans-Peter Steinbrück , Mario Nagelstrasser , Hans-Jürgen Lugauer
IPC分类号： H01L2100
CPC分类号： H01L33/40 , H01L33/0087 , H01L33/28
摘要： The invention relates to a II-VI semiconductor component in which, within a series of layers, there is provided at least one junction between a semiconductor layer containing BeTe and a semiconductor layer containing Se. A boundary layer between the semiconductor layer containing BeTe and the semiconductor layer containing Se is prepared in such a way that it forms a Be—Se configuration.
摘要翻译： 本发明涉及一种II-VI族半导体元件，其中在一系列层内提供了含有BeTe的半导体层和含有Se的半导体层之间的至少一个结。 包含BeTe的半导体层和含有Se的半导体层之间的边界层以使其形成Be-Se构型的方式制备。
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公开(公告)号：US06285697B1
公开(公告)日：2001-09-04
申请号：US09364896
申请日：1999-08-02
申请人： Gottfried Landwehr , Markus Keim , Günter Reuscher , Thomas Litz , Thierry Baron , Frank Fischer , Hans-Jürgen Lugauer
发明人： Gottfried Landwehr , Markus Keim , Günter Reuscher , Thomas Litz , Thierry Baron , Frank Fischer , Hans-Jürgen Lugauer
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/3054 , H01S5/3095 , H01S5/34313
摘要： A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.
摘要翻译： 半导体激光器部件包括具有适合于产生电磁辐射的SCH配置的半导体本体，其中具有量子阱结构的有源层序列设置在第一导电类型的第一外覆盖层和第二外覆盖层之间 第一导电类型的层。 第一导电类型的第一变性过渡层和第二导电类型的第二变性过渡层设置在有源层序列和第二外覆层之间。
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公开(公告)号：US06618410B1
公开(公告)日：2003-09-09
申请号：US09455603
申请日：1999-12-06
IPC分类号： H01S500
CPC分类号： H01S5/183 , H01S5/18305 , H01S5/3095
摘要： An Optoelectronic semiconductor component, in which an active zone is disposed above a semiconductor substrate, and which zone is disposed between at least one first resonator mirror layer and at least one second resonator mirror layer. The first and the second mirror layer each have a semiconductor material of a first conductivity type. At least one first heavily doped junction layer of the first conductivity type and at least one second heavily doped junction layer of a second conductivity type are disposed between the active zone and one of the two mirror layers in such a way that the second heavily doped, degenerate junction layer lies between the active zone and the first heavily doped, degenerate junction layer.
摘要翻译： 一种光电子半导体部件，其中有源区域设置在半导体衬底上方，并且该区域设置在至少一个第一谐振器镜面层和至少一个第二谐振器镜像层之间。 第一和第二镜层各自具有第一导电类型的半导体材料。 第一导电类型的至少一个第一重掺杂结层和第二导电类型的至少一个第二重掺杂结层被设置在有源区和两个镜层中的一个之间，使得第二重掺杂， 简并结层位于有源区和第一重掺杂的退化结层之间。
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公开(公告)号：US6147365A
公开(公告)日：2000-11-14
申请号：US364898
申请日：1999-08-02
申请人： Frank Fischer , Thomas Litz , Hans-Jurgen Lugauer , Markus Keim , Thierry Baron , Gunter Reuscher , Gottfried Landwehr
发明人： Frank Fischer , Thomas Litz , Hans-Jurgen Lugauer , Markus Keim , Thierry Baron , Gunter Reuscher , Gottfried Landwehr
CPC分类号： B82Y20/00 , H01S5/305 , H01S5/347 , H01S5/0421 , H01S5/3059 , H01S5/3409
摘要： An optoelectronic semiconductor component has a radiation-emitting active layer sequence which is associated with at least one poorly dopable semiconductor layer of a first conductivity type. A heavily doped first degenerated junction layer of a first conductivity type and a heavily doped second degenerated junction layer of a second conductivity type opposite to the first conductivity type are provided between the poorly dopable semiconductor layer and a contact layer of the semiconductor body, the contact layer being associated with the poorly dopable semiconductor layer.
摘要翻译： 光电子半导体部件具有辐射发射有源层序列，其与至少一个第一导电类型的不良掺杂半导体层相关联。 第一导电类型的重掺杂第一退化结层和与第一导电类型相反的第二导电类型的重掺杂第二退化结层设置在不良掺杂半导体层和半导体本体的接触层之间，接触 层与差的可掺杂半导体层相关联。
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