公开(公告)号：US4549238A

公开(公告)日：1985-10-22

申请号：US456641

申请日：1983-01-10

申请人： Friedrich Ertingshausen ,  Volker Heinrich ,  Holger Hinkel ,  Gerhard Kaus ,  Jurgen Kempf ,  Hans-Georg Nauth ,  Manfred Schrader

发明人： Friedrich Ertingshausen ,  Volker Heinrich ,  Holger Hinkel ,  Gerhard Kaus ,  Jurgen Kempf ,  Hans-Georg Nauth ,  Manfred Schrader

IPC分类号： G11B21/21 ,  G11B5/10 ,  G11B5/255 ,  G11B5/60 ,  G11B23/50 ,  G11B17/32

CPC分类号： G11B5/255 ,  G11B23/507 ,  G11B5/10 ,  G11B5/6005

摘要： A magnetic head slider consisting of a mixed ceramic made of aluminum oxide/titanium carbide has on its sliding side adjacent a magnetic record carrier a thin layer from which the titanium carbide component has been removed. The titanium carbide component preferably is removed by preferential reactive ion etching in a CF.sub.4 plasma. The magnetic head slider with its sliding surface thus modified exhibits greatly improved sliding properties compared with sliders of the same material having a non-modified sliding surface.

摘要翻译： 由氧化铝/碳化钛组成的混合陶瓷组成的磁头滑块在其滑动面上邻近磁记录载体，已经从其中除去碳化钛组分的薄层。 碳化钛组分优选通过CF4等离子体中的优先反应离子蚀刻除去。 与具有非改性滑动表面的相同材料的滑块相比，其具有如此改进的滑动表面的磁头滑块显示出大大改善的滑动性能。

公开(公告)号：US4386968A

公开(公告)日：1983-06-07

申请号：US274986

申请日：1981-06-18

申请人： Holger Hinkel ,  Jurgen Kempf ,  Georg Kraus ,  Gerhard E. Schmid

发明人： Holger Hinkel ,  Jurgen Kempf ,  Georg Kraus ,  Gerhard E. Schmid

IPC分类号： H01L21/266 ,  H01L21/265 ,  H01L21/316 ,  H01L21/263

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/31662

摘要： Disclosed is a simplified method of producing semiconductor device structures in an integrated technology using at least one ion implantation step. Implantation of the doping ions into a silicon wafer, for example, for producing a subcollector or an emitter, is not effected, as previously, in an ultra-high vacuum atmosphere through a thin protective layer of silicon dioxide which is applied by a separate thermal oxidation step prior to implantation, but the doping ions are directly implanted into the bare silicon wafer. The latter implantation is effected in an atmosphere of increased partial pressure of oxygen. Enhanced diffusion of the oxygen adsorbed at the surface occurs into the vacancies which are generated by the implanted doping ions close the surface of the silicon wafer. In this manner a silicon dioxide protective layer is formed already in the initial stage of ion implantation. As a result one process step can be saved, namely, the production of the protective layer by thermal oxidation prior to ion implantation.

摘要翻译： 公开了使用至少一个离子注入步骤以集成技术制造半导体器件结构的简化方法。 将掺杂离子注入到例如用于制造子集电极或发射极的硅晶片中，如前所述，在超高真空气氛中通过二氧化硅的薄保护层进行注入，所述薄保护层通过单独的热 在植入之前的氧化步骤，但掺杂离子被直接注入裸硅晶片。 后者的注入在氧分压增加的气氛中进行。 在表面处吸附的氧的增强的扩散发生在由注入的掺杂离子产生的空位中，这些离子靠近硅晶片的表面。 以这种方式，在离子注入的初始阶段已形成二氧化硅保护层。 因此，可以节省一个工艺步骤，即在离子注入之前通过热氧化生产保护层。

公开(公告)号：US20060161992A1

公开(公告)日：2006-07-20

申请号：US10526715

申请日：2003-09-04

申请人： Jurgen Kempf

发明人： Jurgen Kempf

IPC分类号： G06F1/26

CPC分类号： G06K9/00154

摘要： Biometric writing system having a pen housing (3) for carrying out hand-guided movements on a substrate (4) at least one microphone (5), which is integrated in a housing (3), for acoustic recording of sound signals which are caused by the hand-guided movements; and a data processing unit (11) for calculation of biometric data as a function of the recorded sound signals.

摘要翻译： 具有用于在基板（4）上执行手动引导的运动的笔式外壳（3）的生物识别书写系统，其集成在壳体（3）中的至少一个麦克风（5），用于声音记录所引起的声音信号 通过手动引导运动; 以及用于计算作为所记录的声音信号的函数的生物特征数据的数据处理单元（11）。

公开(公告)号：US4855197A

公开(公告)日：1989-08-08

申请号：US44929

申请日：1987-05-01

申请人： Werner Zapka ,  Jurgen Kempf ,  Joachim Keyser ,  Karl Asch

发明人： Werner Zapka ,  Jurgen Kempf ,  Joachim Keyser ,  Karl Asch

IPC分类号： G03F1/20 ,  G03F1/22 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F1/20 ,  G03F1/22 ,  G03F7/70875 ,  Y10S430/167

摘要： A mask for radiation beam lithography is formed from a semiconductor wafer by thinning a region into a membrane with a hole pattern defining the pattern of the mask. The membrane is doped with a tensile stress-generating material so that minimum doping exists at the periphery of the membrane with the maximum at its center. The difference in doping between the periphery and the center is chosen so that when the mask is irradiated with a given beam current intensity, the membrane is tension-free. To make a mask in the wafer, a hole pattern is formed by etching holes in the membrane or by depositing a layer on the membrane. The wafer is thinned from the opposite surface until the holes in the hole pattern are throughholes or until the desired thickness is reached. The membrane is doped with tensile-stress-generating material using ion implantation or diffusion proportionally to the temperature distribution existing in the membrane during irradiation with exposure beams.

摘要翻译： 用半导体晶片形成用于辐射束光刻的掩模，通过将区域变薄成具有限定掩模图案的孔图案的膜。 膜被拉伸应力产生材料掺杂，使得最小掺杂存在于膜的周边处，其中心处具有最大值。 选择周边和中心之间的掺杂差异，使得当以给定的束电流强度照射掩模时，膜是无张力的。 为了在晶片中制作掩模，通过蚀刻膜中的孔或通过在膜上沉积一层形成孔图案。 晶片从相对表面变薄，直到孔图案中的孔为通孔，或直到达到所需厚度。 使用离子注入或扩散成膜时，利用曝光光束照射期间膜与存在于膜中的温度分布成比例地掺入拉伸应力产生材料。

公开(公告)号：US4424102A

公开(公告)日：1984-01-03

申请号：US479405

申请日：1983-03-28

申请人： Christine Brandeis ,  Jurgen Kempf ,  Georg Kraus ,  Ulrich Ku/ nzel

发明人： Christine Brandeis ,  Jurgen Kempf ,  Georg Kraus ,  Ulrich Ku/ nzel

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01J37/34 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/673 ,  C23C15/00

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/3405

摘要： A reactor comprising a plate-shaped cathode that is horizontally arranged and connected to an alternating voltage, in a ground connected casing, and gas inlet and gas outlet lines. The cathode is equipped with means for generating local magnetic fields restricted to the region of the individually supported substrates. The cathode can be furthermore have holes or openings in which are arranged substrate holders shiftable or movable vertically to relate to the substrate surface. The substrates are etched in the reactor by means of a plasma which is produced from at least one reactive gas. Each substrate is exposed to at least one local magnetic field. If a mostly chemically etchable material is to be etched in the presence of a mostly physically etchable material, to a much stronger extent than the latter, the advantageous etching speed ratio can be set in that the substrates are additionally raised over the cathode surface.

摘要翻译： 一种反应器，包括水平布置并连接到交流电压的板状阴极，在接地壳体中，以及气体入口和气体出口管线。 阴极配备有用于产生限于单独支撑的衬底的区域的局部磁场的装置。 阴极还可以具有孔或开口，其中布置有衬底保持器，其可移动或垂直移动以涉及衬底表面。 通过由至少一种反应性气体产生的等离子体在反应器中蚀刻基板。 每个衬底暴露于至少一个局部磁场。 如果在大多数物理上可蚀刻的材料的存在下大部分化学蚀刻的材料被蚀刻到比后者更强的程度，则可以设置有利的蚀刻速度比，即衬底在阴极表面上另外升高。

公开(公告)号：US20080184685A1

公开(公告)日：2008-08-07

申请号：US12024747

申请日：2008-02-01

申请人： Jurgen Kempf ,  Rainer Kaffenberger

发明人： Jurgen Kempf ,  Rainer Kaffenberger

IPC分类号： B01D29/05

CPC分类号： B01D46/0005 ,  B01D46/0013 ,  B01D2265/025 ,  B01D2265/028

摘要： With respect to the task of creating a frame for holding a filter element, the frame being easy to install following the inexpensive production thereof, a frame for receiving a filter element, comprising four wall elements (1, 2), which rest against one another on installation edges (3, 4) and form a peripheral wall (5), is characterized in that two wall elements (1, 2), respectively, are configured identically. Furthermore a cassette filter is provided.

摘要翻译： 关于创建用于保持过滤器元件的框架的任务，框架在其便宜的生产之后易于安装，用于接收过滤器元件的框架包括彼此靠在一起的四个壁元件（1,2） 在安装边缘（3,4）上并形成周壁（5）的特征在于，两个壁元件（1,2）分别被配置成相同。 此外，提供盒式滤波器。