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19 条记录 (耗时 0.022 秒)

    Fragrance composition comprising at least one ionic liquid, method for production and use thereof
    3.
    发明申请
    Fragrance composition comprising at least one ionic liquid, method for production and use thereof 审中-公开
    包含至少一种离子液体的香料组合物，其制备方法和用途

    公开(公告)号：US20060166856A1

    公开(公告)日：2006-07-27

    申请号：US10529947

    申请日：2003-10-08

    申请人： Frank-Martin Petrat ,  Friedrich Schmidt ,  Bernhard Stutzel ,  Gunther Kohler

    发明人： Frank-Martin Petrat ,  Friedrich Schmidt ,  Bernhard Stutzel ,  Gunther Kohler

    IPC分类号： A61Q13/00

    CPC分类号： C11D3/50 ,  A61K8/4946 ,  A61Q13/00 ,  C11D1/60 ,  C11D1/62 ,  C11D3/28

    摘要： The invention relates to a fragrance composition which has, as fixative, at least one ionic liquid, and to the preparation and use thereof. The fragrance compositions according to the invention are advantageous since the ionic liquid, being a polar solvent which has as it were no vapor pressure, can delay the evaporation of the base scent components in a targeted manner. The large choice of ionic liquids allows the rate of evaporation of the scent components to be adjusted precisely. Since the polarity of the ionic liquids can be varied by means of the structure of the cations and/or anions within wide ranges, the ionic liquids used as fixative can be matched precisely to the chemicophysical and/or olfactory requirements of the scent component.

    摘要翻译： 本发明涉及一种具有至少一种离子液体作为固定剂的香料组合物及其制备和用途。 根据本发明的香料组合物是有利的，因为作为非蒸气压的极性溶剂的离子液体可以以目标方式延迟基础气味组分的蒸发。 离子液体的大量选择允许气味组分的蒸发速率被精确调节。 由于离子液体的极性可以通过在宽范围内的阳离子和/或阴离子的结构而变化，所以用作固定剂的离子液体可以精确地与香味组分的化学物理和/或嗅觉要求相匹配。

    Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite
    6.
    发明授权
    Pyrogenic zinc oxide-comprising composite of layers and field-effect transistor comprising this composite 有权
    含热解氧化锌的复合层和场效应晶体管包括该复合材料

    公开(公告)号：US08907333B2

    公开(公告)日：2014-12-09

    申请号：US12596150

    申请日：2008-03-10

    申请人： Frank-Martin Petrat ,  Heiko Thiem ,  Sven Hill ,  Andre Ebbers ,  Koshi Okamura ,  Roland Schmechel

    发明人： Frank-Martin Petrat ,  Heiko Thiem ,  Sven Hill ,  Andre Ebbers ,  Koshi Okamura ,  Roland Schmechel

    IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L21/3205 ,  H01L29/786

    CPC分类号： H01L21/32055 ,  H01L29/7869

    摘要： Composite of layers which comprises a dielectric layer and a layer which comprises pyrogenic zinc oxide and is bonded to the dielectric layer. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to the dielectric layer in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm, and the zinc oxide layer is dried and then treated at temperatures of less than 200° C. Process for producing the composite of layers, in which the pyrogenic zinc oxide is applied to a substrate layer or a composite of substrate layers in the form of a dispersion in which the zinc oxide particles are present with a mean aggregate diameter of less than 200 nm to form a zinc oxide layer, and then the zinc oxide layer and the substrate layer are treated at temperatures of less than 200° C., and then a dielectric layer is applied to the zinc oxide layer. Field-effect transistor which has the composite of layers.

    摘要翻译： 包括电介质层和包含热解氧化锌并结合到电介质层的层的层的复合物。 制造层的复合体的方法，其中将热解氧化锌以平均聚集体直径小于200nm的存在氧化锌颗粒的分散体形式施加到电介质层，氧化锌层 干燥，然后在小于200℃的温度下处理。制备层的复合物的方法，其中将热解氧化锌施加到基质层或基质层的复合物，其中锌的分散体 存在平均聚集体直径小于200nm的氧化物颗粒以形成氧化锌层，然后在小于200℃的温度下处理氧化锌层和基底层，然后施加电介质层 到氧化锌层。 具有复合层的场效应晶体管。

    Nanoscale crystalline silicon powder
    9.
    发明授权
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号：US08043593B2

    公开(公告)日：2011-10-25

    申请号：US12759346

    申请日：2010-04-13

    申请人： Markus Pridoehl ,  Paul Roth ,  Hartmut Wiggers ,  Frank-Martin Petrat ,  Michael Kraemer

    发明人： Markus Pridoehl ,  Paul Roth ,  Hartmut Wiggers ,  Frank-Martin Petrat ,  Michael Kraemer

    IPC分类号： C01B33/02 ,  C01B33/029

    CPC分类号： C01B33/03 ,  C01B33/02 ,  C01B33/029 ,  Y10T428/2982

    摘要： An aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g is provided. The aggregated silicon powder may be doped with phosphorus, arsenic, antimony, bismuth, boron, aluminium, gallium, indium, thallium, europium, erbium, cerium, praseodymium, neodymium, samarium, gadolinium, terbium, dysprosium, holmium, thulium, lutetium, lithium, ytterbium, germanium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, or zinc.

    摘要翻译： 提供BET表面积为20-150m2 / g的聚集的结晶硅粉末。 聚集的硅粉末可以掺杂有磷，砷，锑，铋，硼，铝，镓，铟，铊，铕，铒，铈，镨，钕，钐，钆，铽，镝，钬，ium，镥， 锂，镱，锗，铁，钌，锇，钴，铑，铱，镍，钯，铂，铜，银，金或锌。

    Nanoscale crystalline silicon powder
    10.
    发明授权
    Nanoscale crystalline silicon powder 有权
    纳米级结晶硅粉

    公开(公告)号：US07776304B2

    公开(公告)日：2010-08-17

    申请号：US10579460

    申请日：2004-11-13

    申请人： Markus Pridoehl ,  Paul Roth ,  Hartmut Wiggers ,  Frank-Martin Petrat ,  Michael Kraemer

    发明人： Markus Pridoehl ,  Paul Roth ,  Hartmut Wiggers ,  Frank-Martin Petrat ,  Michael Kraemer

    IPC分类号： C01B33/027 ,  C01B33/02 ,  C01B33/021

    CPC分类号： C01B33/03 ,  C01B33/02 ,  C01B33/029 ,  Y10T428/2982

    摘要： Aggregated crystalline silicon powder with a BET surface area of 20 to 150 m2/g. It is prepared by subjecting at least one vaporous or gaseous silane and optionally at least one vaporous or gaseous doping material, an inert gas and hydrogen to heat in a hot wall reactor, cooling the reaction mixture or allowing the reaction mixture to cool and separating the product from gaseous substances in the form of a powder, wherein the proportion of silane is between 0.1 and 90 wt. %, with respect to the sum of silane, doping material, hydrogen and inert gases, and wherein the proportion of hydrogen, with respect to the sum of hydrogen, silane, inert gas and doping material, is in the range 1 mol. % to 96 mol. %. It can be used to produce electronic components.

    摘要翻译： 聚合结晶硅粉末，BET表面积为20〜150m2 / g。 通过使至少一种蒸气或气态硅烷和任选的至少一种蒸气或气态掺杂材料，惰性气体和氢气在热壁反应器中加热，冷却反应混合物或使反应混合物冷却和分离 来自气态物质的粉末形式的产物，其中硅烷的比例为0.1-90wt。 相对于硅烷，掺杂材料，氢气和惰性气体的总和，其中相对于氢，硅烷，惰性气体和掺杂材料之和的氢的比例在1mol的范围内。 ％至96mol。 ％。 它可用于生产电子元件。