Semiconductor integrated circuit and magnetic storage device using the same
    1.
    发明申请
    Semiconductor integrated circuit and magnetic storage device using the same 失效
    半导体集成电路和使用其的磁存储器件

    公开(公告)号:US20050207228A1

    公开(公告)日:2005-09-22

    申请号:US11030067

    申请日:2005-01-07

    摘要: The present invention provides a semiconductor integrated circuit capable of reducing a circuit area and a magnetic storage device using the same. The circuit in the present invention is provided with a single-stage output transistor for supplying write current to a magnetic head, a current source for outputting reference current of the write current, a diode-connected NMOS transistor for converting the current to gate voltage and having a certain device size ratio to the output transistor, a regulator circuit for transmitting gate voltage of the NMOS transistor and reducing output impedance, and a CMOS circuit for setting power supply voltage to an output of the regulator circuit and controlling the gate voltage of the output transistor. Then, this circuit is applied as a write circuit in a magnetic storage device.

    摘要翻译: 本发明提供能够减少电路面积的半导体集成电路和使用该半导体集成电路的磁存储装置。 本发明的电路设置有用于向磁头提供写入电流的单级输出晶体管,用于输出写入电流的参考电流的电流源,用于将电流转换为栅极电压的二极管连接的NMOS晶体管,以及 与输出晶体管具有一定的器件尺寸比,用于传输NMOS晶体管的栅极电压并降低输出阻抗的调节器电路,以及用于将电源电压设置到调节器电路的输出并控制调节器电路的栅极电压的CMOS电路 输出晶体管。 然后,该电路作为写入电路应用于磁存储装置。

    Magnetic recording device
    2.
    发明授权
    Magnetic recording device 失效
    磁记录装置

    公开(公告)号:US07417818B2

    公开(公告)日:2008-08-26

    申请号:US11342828

    申请日:2006-01-31

    IPC分类号: G11B5/02

    CPC分类号: G11B5/486 G11B5/484

    摘要: A magnetic recording device capable of reducing the size of a writing circuit and the power consumption by readily adjusting the overshoot of the write current pulses is provided. Two or more transmission lines having different characteristic impedances are provided between an output driver having an impedance Zs and a magnetic head, the transmission lines are formed so that the characteristic impedances Z1, Zn−1, and Zn (n≧2) thereof on the output driver side are higher than those on the magnetic recording head side (Z1>Zn−1>Zn), and the impedance Zs of the output driver is equal to or higher than the characteristic impedance Z1 of the transmission line.

    摘要翻译: 提供了能够通过容易地调整写入电流脉冲的过冲来减小写入电路的尺寸和功耗的磁记录装置。 具有不同特性阻抗的两条或更多条传输线被提供在具有阻抗Z S s的输出驱动器和磁头之间,传输线形成为使得特性阻抗Z 1 = 2)高于磁记录头侧(Z 1

    Semiconductor integrated circuit and magnetic storage device using the same
    3.
    发明授权
    Semiconductor integrated circuit and magnetic storage device using the same 失效
    半导体集成电路和使用其的磁存储器件

    公开(公告)号:US07046468B2

    公开(公告)日:2006-05-16

    申请号:US11030067

    申请日:2005-01-07

    IPC分类号: G11B5/02

    摘要: The present invention provides a semiconductor integrated circuit capable of reducing a circuit area and a magnetic storage device using the same. The circuit in the present invention is provided with a single-stage output transistor for supplying write current to a magnetic head, a current source for outputting reference current of the write current, a diode-connected NMOS transistor for converting the current to gate voltage and having a certain device size ratio to the output transistor, a regulator circuit for transmitting gate voltage of the NMOS transistor and reducing output impedance, and a CMOS circuit for setting power supply voltage to an output of the regulator circuit and controlling the gate voltage of the output transistor. Then, this circuit is applied as a write circuit in a magnetic storage device.

    摘要翻译: 本发明提供能够减少电路面积的半导体集成电路和使用该半导体集成电路的磁存储装置。 本发明的电路设置有用于向磁头提供写入电流的单级输出晶体管,用于输出写入电流的参考电流的电流源,用于将电流转换为栅极电压的二极管连接的NMOS晶体管,以及 与输出晶体管具有一定的器件尺寸比,用于传输NMOS晶体管的栅极电压并降低输出阻抗的调节器电路,以及用于将电源电压设置到调节器电路的输出并控制调节器电路的栅极电压的CMOS电路 输出晶体管。 然后,该电路作为写入电路应用于磁存储装置。

    Signal transmission circuit, signal output circuit and termination method of signal transmission circuit
    4.
    发明授权
    Signal transmission circuit, signal output circuit and termination method of signal transmission circuit 有权
    信号传输电路,信号输出电路和信号传输电路的终端方法

    公开(公告)号:US07373114B2

    公开(公告)日:2008-05-13

    申请号:US11030063

    申请日:2005-01-07

    IPC分类号: H04B1/44

    CPC分类号: H04B3/02 H04L25/0282

    摘要: This invention provides a signal transmission circuit, a signal output circuit, and a termination method of a signal transmission circuit capable of preventing the re-reflection of the signal at a transmitting node of a transmission path even when an impedance of a signal output circuit does not match a characteristic impedance of a transmission path. On a signal transmission circuit composed of a transmission path, a signal output circuit connected to a transmitting node of the transmission path, and a signal receiver circuit connected to a receiving node of the signal transmission path, in order to prevent the re-reflection of an output signal of a signal output unit at the transmitting node via the receiving node, a correction current generator unit is provided for outputting correction current with a predetermined current amount and at a predetermined timing set in a current amount/timing control section, to the transmitting node.

    摘要翻译: 本发明提供信号传输电路,信号输出电路和信号传输电路的终止方法,该信号传输电路即使在信号输出电路的阻抗发生时也能防止在传输路径的发射节点处的信号的再反射 不符合传输路径的特性阻抗。 在由传输路径组成的信号传输电路,连接到传输路径的发送节点的信号输出电路以及连接到信号传输路径的接收节点的信号接收器电路中,以防止重新反射 经由接收节点在发送节点处的信号输出单元的输出信号,提供校正电流发生器单元,用于以预定电流量和在当前量/定时控制部分中设置的预定定时输出校正电流, 发送节点。

    Magnetic recording device
    5.
    发明申请
    Magnetic recording device 失效
    磁记录装置

    公开(公告)号:US20060203372A1

    公开(公告)日:2006-09-14

    申请号:US11342828

    申请日:2006-01-31

    IPC分类号: G11B5/02

    CPC分类号: G11B5/486 G11B5/484

    摘要: A magnetic recording device capable of reducing the size of a writing circuit and the power consumption by readily adjusting the overshoot of the write current pulses is provided. Two or more transmission lines having different characteristic impedances are provided between an output driver having an impedance Zs and a magnetic head, the transmission lines are formed so that the characteristic impedances Z1, Zn−1, and Zn (n≧2) thereof on the output driver side are higher than those on the magnetic recording head side (Z1>Zn−1>Zn), and the impedance Zs of the output driver is equal to or higher than the characteristic impedance Z1 of the transmission line.

    摘要翻译: 提供了能够通过容易地调整写入电流脉冲的过冲来减小写入电路的尺寸和功耗的磁记录装置。 具有不同特性阻抗的两条或更多条传输线被提供在具有阻抗Z S s的输出驱动器和磁头之间,传输线形成为使得特性阻抗Z 1 = 2)高于磁记录头侧(Z 1

    Signal transmission circuit, signal output circuit and termination method of signal transmission circuit
    6.
    发明申请
    Signal transmission circuit, signal output circuit and termination method of signal transmission circuit 有权
    信号传输电路,信号输出电路和信号传输电路的终端方法

    公开(公告)号:US20050208902A1

    公开(公告)日:2005-09-22

    申请号:US11030063

    申请日:2005-01-07

    CPC分类号: H04B3/02 H04L25/0282

    摘要: This invention provides a signal transmission circuit, a signal output circuit, and a termination method of a signal transmission circuit capable of preventing the re-reflection of the signal at a transmitting node of a transmission path even when an impedance of a signal output circuit does not match a characteristic impedance of a transmission path. On a signal transmission circuit composed of a transmission path, a signal output circuit connected to a transmitting node of the transmission path, and a signal receiver circuit connected to a receiving node of the signal transmission path, in order to prevent the re-reflection of an output signal of a signal output unit at the transmitting node via the receiving node, a correction current generator unit is provided for outputting correction current with a predetermined current amount and at a predetermined timing set in a current amount/timing control section, to the transmitting node.

    摘要翻译: 本发明提供信号传输电路,信号输出电路和信号传输电路的终止方法,该信号传输电路即使在信号输出电路的阻抗发生时也能防止在传输路径的发射节点处的信号的再反射 不符合传输路径的特性阻抗。 在由传输路径组成的信号传输电路,连接到传输路径的发送节点的信号输出电路以及连接到信号传输路径的接收节点的信号接收器电路中,以防止重新反射 经由接收节点在发送节点处的信号输出单元的输出信号,提供校正电流发生器单元,用于以预定电流量和在当前量/定时控制部分中设置的预定定时输出校正电流, 发送节点。

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US07319575B2

    公开(公告)日:2008-01-15

    申请号:US11288323

    申请日:2005-11-29

    IPC分类号: H02H9/00 H03K17/16

    CPC分类号: H03F1/52 H01L27/0266

    摘要: This invention provides a semiconductor device in which an ESD protection circuit and a termination circuit can be realized with a small die area. A PMOS transistor having an ESD protection function is placed between a signal node on a line from an signal terminal to an input buffer and a supply voltage node. Furthermore, a voltage generator circuit is placed to supply a reference voltage to the gate of the PMOS transistor. By the reference voltage controlled by the voltage generator circuit, a source drain resistance of the PMOS transistor is set. Thereby, the PMOS transistor can be made to function as a terminating resistor whose resistance can be set adaptively to a characteristic impedance of a transmission line, for example, connected to the signal terminal in addition to the ESD protection function.

    摘要翻译: 本发明提供一种半导体器件,其中可以以小的裸片面积实现ESD保护电路和终端电路。 具有ESD保护功能的PMOS晶体管被放置在从信号端到输入缓冲器的线路上的信号节点和电源电压节点之间。 此外,放置电压发生器电路以向PMOS晶体管的栅极提供参考电压。 通过由电压发生器电路控制的参考电压,设置PMOS晶体管的源极漏极电阻。 由此,除了ESD保护功能之外,还可以使PMOS晶体管起到终端电阻的作用,该电阻的电阻可以适应于传输线的特性阻抗,例如连接到信号端。

    Semiconductor device
    8.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号:US20060158802A1

    公开(公告)日:2006-07-20

    申请号:US11288323

    申请日:2005-11-29

    IPC分类号: H02H9/00

    CPC分类号: H03F1/52 H01L27/0266

    摘要: This invention provides a semiconductor device in which an ESD protection circuit and a termination circuit can be realized with a small die area. A PMOS transistor having an ESD protection function is placed between a signal node on a line from an signal terminal to an input buffer and a supply voltage node. Furthermore, a voltage generator circuit is placed to supply a reference voltage to the gate of the PMOS transistor. By the reference voltage controlled by the voltage generator circuit, a source-drain resistance of the PMOS transistor is set. Thereby, the PMOS transistor can be made to function as a terminating resistor whose resistance can be set adaptively to a characteristic impedance of a transmission line, for example, connected to the signal terminal in addition to the ESD protection function.

    摘要翻译: 本发明提供一种半导体器件,其中可以以小的裸片面积实现ESD保护电路和终端电路。 具有ESD保护功能的PMOS晶体管被放置在从信号端到输入缓冲器的线路上的信号节点和电源电压节点之间。 此外,放置电压发生器电路以向PMOS晶体管的栅极提供参考电压。 通过由电压发生器电路控制的参考电压,设置PMOS晶体管的源极 - 漏极电阻。 由此,除了ESD保护功能之外,还可以使PMOS晶体管起到终端电阻的作用,该电阻的电阻可以适应于传输线的特性阻抗,例如连接到信号端。

    Logic circuit
    9.
    发明授权
    Logic circuit 失效
    逻辑电路

    公开(公告)号:US07768330B2

    公开(公告)日:2010-08-03

    申请号:US12003443

    申请日:2007-12-26

    IPC分类号: H03K3/00

    摘要: For example, a gain control part and a common node control part are provided in a logic circuit including a data acquisition part that has a differential amplifier configuration and acquires a data input signal when a click signal is an “H” level and a latch part that latches a data output signal from the data acquisition part when the click signal is an “L” level. The gain control part is provided between common nodes of NMOS transistors in the differential amplifier and serves to make the gain of the differential amplifier higher in a high frequency band than in a low frequency band. When the clock signal is an “L” level, the common node control part serves to control an electrical charge so as to eliminate a potential difference between the common nodes. Thus, the transition time of the data output signal is speeded up and the setup margin is increased in the latch part. The above described technique can therefore speed up operations of various logic circuits such as a latch circuit.

    摘要翻译: 例如,在包括具有差分放大器配置的数据采集部分的逻辑电路中提供增益控制部分和公共节点控制部分,并且当点击信号为“H”电平时获取数据输入信号,并且锁存部分 当点击信号为“L”电平时,锁存来自数据采集部分的数据输出信号。 增益控制部分设置在差分放大器中的NMOS晶体管的公共节点之间,用于使高频带中差分放大器的增益高于低频带。 当时钟信号为“L”电平时,公共节点控制部分用于控制电荷,以消除公共节点之间的电位差。 因此,数据输出信号的转换时间被加速并且在锁存部分中增加了设置余量。 因此,上述技术可以加速诸如锁存电路的各种逻辑电路的操作。

    Logic circuit
    10.
    发明申请
    Logic circuit 失效
    逻辑电路

    公开(公告)号:US20080204100A1

    公开(公告)日:2008-08-28

    申请号:US12003443

    申请日:2007-12-26

    IPC分类号: H03K3/289 H03K3/286

    摘要: For example, a gain control part and a common node control part are provided in a logic circuit including a data acquisition part that has a differential amplifier configuration and acquires a data input signal when a click signal is an “H” level and a latch part that latches a data output signal from the data acquisition part when the click signal is an “L” level. The gain control part is provided between common nodes of NMOS transistors in the differential amplifier and serves to make the gain of the differential amplifier higher in a high frequency band than in a low frequency band. When the clock signal is an “L” level, the common node control part serves to control an electrical charge so as to eliminate a potential difference between the common nodes. Thus, the transition time of the data output signal is speeded up and the setup margin is increased in the latch part. The above described technique can therefore speed up operations of various logic circuits such as a latch circuit.

    摘要翻译: 例如,在包括具有差分放大器配置的数据采集部分的逻辑电路中提供增益控制部分和公共节点控制部分,并且当点击信号为“H”电平时获取数据输入信号,并且锁存部分 当点击信号为“L”电平时,锁存来自数据采集部分的数据输出信号。 增益控制部分设置在差分放大器中的NMOS晶体管的公共节点之间,用于使高频带中差分放大器的增益高于低频带。 当时钟信号为“L”电平时,公共节点控制部分用于控制电荷,以消除公共节点之间的电位差。 因此,数据输出信号的转换时间被加速并且在锁存部分中增加了设置余量。 因此,上述技术可以加速诸如锁存电路的各种逻辑电路的操作。