摘要:
The present invention provides a semiconductor integrated circuit capable of reducing a circuit area and a magnetic storage device using the same. The circuit in the present invention is provided with a single-stage output transistor for supplying write current to a magnetic head, a current source for outputting reference current of the write current, a diode-connected NMOS transistor for converting the current to gate voltage and having a certain device size ratio to the output transistor, a regulator circuit for transmitting gate voltage of the NMOS transistor and reducing output impedance, and a CMOS circuit for setting power supply voltage to an output of the regulator circuit and controlling the gate voltage of the output transistor. Then, this circuit is applied as a write circuit in a magnetic storage device.
摘要:
A magnetic recording device capable of reducing the size of a writing circuit and the power consumption by readily adjusting the overshoot of the write current pulses is provided. Two or more transmission lines having different characteristic impedances are provided between an output driver having an impedance Zs and a magnetic head, the transmission lines are formed so that the characteristic impedances Z1, Zn−1, and Zn (n≧2) thereof on the output driver side are higher than those on the magnetic recording head side (Z1>Zn−1>Zn), and the impedance Zs of the output driver is equal to or higher than the characteristic impedance Z1 of the transmission line.
摘要翻译:提供了能够通过容易地调整写入电流脉冲的过冲来减小写入电路的尺寸和功耗的磁记录装置。 具有不同特性阻抗的两条或更多条传输线被提供在具有阻抗Z S s的输出驱动器和磁头之间,传输线形成为使得特性阻抗Z 1 SUB 输出驱动器侧的Z,N,N,N,N,N,N(n> = 2)高于磁记录头侧(Z 1 SUB>。
摘要:
The present invention provides a semiconductor integrated circuit capable of reducing a circuit area and a magnetic storage device using the same. The circuit in the present invention is provided with a single-stage output transistor for supplying write current to a magnetic head, a current source for outputting reference current of the write current, a diode-connected NMOS transistor for converting the current to gate voltage and having a certain device size ratio to the output transistor, a regulator circuit for transmitting gate voltage of the NMOS transistor and reducing output impedance, and a CMOS circuit for setting power supply voltage to an output of the regulator circuit and controlling the gate voltage of the output transistor. Then, this circuit is applied as a write circuit in a magnetic storage device.
摘要:
This invention provides a signal transmission circuit, a signal output circuit, and a termination method of a signal transmission circuit capable of preventing the re-reflection of the signal at a transmitting node of a transmission path even when an impedance of a signal output circuit does not match a characteristic impedance of a transmission path. On a signal transmission circuit composed of a transmission path, a signal output circuit connected to a transmitting node of the transmission path, and a signal receiver circuit connected to a receiving node of the signal transmission path, in order to prevent the re-reflection of an output signal of a signal output unit at the transmitting node via the receiving node, a correction current generator unit is provided for outputting correction current with a predetermined current amount and at a predetermined timing set in a current amount/timing control section, to the transmitting node.
摘要:
A magnetic recording device capable of reducing the size of a writing circuit and the power consumption by readily adjusting the overshoot of the write current pulses is provided. Two or more transmission lines having different characteristic impedances are provided between an output driver having an impedance Zs and a magnetic head, the transmission lines are formed so that the characteristic impedances Z1, Zn−1, and Zn (n≧2) thereof on the output driver side are higher than those on the magnetic recording head side (Z1>Zn−1>Zn), and the impedance Zs of the output driver is equal to or higher than the characteristic impedance Z1 of the transmission line.
摘要翻译:提供了能够通过容易地调整写入电流脉冲的过冲来减小写入电路的尺寸和功耗的磁记录装置。 具有不同特性阻抗的两条或更多条传输线被提供在具有阻抗Z S s的输出驱动器和磁头之间,传输线形成为使得特性阻抗Z 1 SUB 输出驱动器侧的Z,N,N,N,N,N,N(n> = 2)高于磁记录头侧(Z 1 SUB>。
摘要:
This invention provides a signal transmission circuit, a signal output circuit, and a termination method of a signal transmission circuit capable of preventing the re-reflection of the signal at a transmitting node of a transmission path even when an impedance of a signal output circuit does not match a characteristic impedance of a transmission path. On a signal transmission circuit composed of a transmission path, a signal output circuit connected to a transmitting node of the transmission path, and a signal receiver circuit connected to a receiving node of the signal transmission path, in order to prevent the re-reflection of an output signal of a signal output unit at the transmitting node via the receiving node, a correction current generator unit is provided for outputting correction current with a predetermined current amount and at a predetermined timing set in a current amount/timing control section, to the transmitting node.
摘要:
This invention provides a semiconductor device in which an ESD protection circuit and a termination circuit can be realized with a small die area. A PMOS transistor having an ESD protection function is placed between a signal node on a line from an signal terminal to an input buffer and a supply voltage node. Furthermore, a voltage generator circuit is placed to supply a reference voltage to the gate of the PMOS transistor. By the reference voltage controlled by the voltage generator circuit, a source drain resistance of the PMOS transistor is set. Thereby, the PMOS transistor can be made to function as a terminating resistor whose resistance can be set adaptively to a characteristic impedance of a transmission line, for example, connected to the signal terminal in addition to the ESD protection function.
摘要:
This invention provides a semiconductor device in which an ESD protection circuit and a termination circuit can be realized with a small die area. A PMOS transistor having an ESD protection function is placed between a signal node on a line from an signal terminal to an input buffer and a supply voltage node. Furthermore, a voltage generator circuit is placed to supply a reference voltage to the gate of the PMOS transistor. By the reference voltage controlled by the voltage generator circuit, a source-drain resistance of the PMOS transistor is set. Thereby, the PMOS transistor can be made to function as a terminating resistor whose resistance can be set adaptively to a characteristic impedance of a transmission line, for example, connected to the signal terminal in addition to the ESD protection function.
摘要:
For example, a gain control part and a common node control part are provided in a logic circuit including a data acquisition part that has a differential amplifier configuration and acquires a data input signal when a click signal is an “H” level and a latch part that latches a data output signal from the data acquisition part when the click signal is an “L” level. The gain control part is provided between common nodes of NMOS transistors in the differential amplifier and serves to make the gain of the differential amplifier higher in a high frequency band than in a low frequency band. When the clock signal is an “L” level, the common node control part serves to control an electrical charge so as to eliminate a potential difference between the common nodes. Thus, the transition time of the data output signal is speeded up and the setup margin is increased in the latch part. The above described technique can therefore speed up operations of various logic circuits such as a latch circuit.
摘要:
For example, a gain control part and a common node control part are provided in a logic circuit including a data acquisition part that has a differential amplifier configuration and acquires a data input signal when a click signal is an “H” level and a latch part that latches a data output signal from the data acquisition part when the click signal is an “L” level. The gain control part is provided between common nodes of NMOS transistors in the differential amplifier and serves to make the gain of the differential amplifier higher in a high frequency band than in a low frequency band. When the clock signal is an “L” level, the common node control part serves to control an electrical charge so as to eliminate a potential difference between the common nodes. Thus, the transition time of the data output signal is speeded up and the setup margin is increased in the latch part. The above described technique can therefore speed up operations of various logic circuits such as a latch circuit.