公开(公告)号：US20120263629A1

公开(公告)日：2012-10-18

申请号：US13539040

申请日：2012-06-29

申请人： Fumitake SATOH ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito

发明人： Fumitake SATOH ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito

IPC分类号： B01J19/00

CPC分类号： C01B3/08 ,  B01J8/00 ,  C02F1/68 ,  C02F1/685 ,  C02F1/687 ,  C02F1/705 ,  Y02E60/36

摘要： Living organism applicable hydrogen-contained fluid is obtained through storing a hydrogen generating system, which contains a hydrogen generating agent as an essential component, in a hydrogen bubble forming implement which has a gas/liquid separating section including a gas-permeable film or an open-close type valve, causing the hydrogen generating system and a generating-purpose water to react in the hydrogen bubble forming implement, and supplying hydrogen gas generated in the hydrogen bubble forming implement into living organism applicable fluid via the gas/liquid separating section.

摘要翻译： 生物体适用的含氢流体是通过将含氢生成剂作为必需成分的氢气生成系统储存在具有气体/液体分离部分的气泡成形工具中获得的，所述气体/液体分离部分包括透气膜或开口 - 闭式阀，使得氢气发生系统和发电用水在氢气形成工具中反应，并且通过气/液分离段将在氢气形成工具中产生的氢气供应到生物体适用的流体中。

公开(公告)号：US09108871B2

公开(公告)日：2015-08-18

申请号：US13491435

申请日：2012-06-07

申请人： Fumitake Satoh ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito ,  Tomoyuki Yanagihara ,  Yohei Satoh ,  Yoko Satoh

发明人： Fumitake Satoh ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito ,  Tomoyuki Yanagihara ,  Yohei Satoh ,  Yoko Satoh

IPC分类号： B01D19/00 ,  B65B29/06 ,  B65D85/72 ,  C02F1/68 ,  C02F1/70 ,  A23L2/54 ,  C01B3/06 ,  C01B3/08

CPC分类号： C02F1/685 ,  A23L2/54 ,  B01D19/0063 ,  C01B3/065 ,  C01B3/08 ,  C02F1/68 ,  C02F1/688 ,  C02F1/70 ,  C02F1/705 ,  C02F2305/06 ,  Y02E60/362

摘要： A selective hydrogen adding equipment for living organism applicable fluid, comprising a hydrogen generating system and a hydrogen bubble forming implement, the hydrogen bubble forming implement having a gas/liquid separating section including an open-close type valve, wherein the hydrogen bubble forming implement is disposed in a closed container storing living organism applicable fluid and the hydrogen gas is supplied into the closed container storing living organism applicable fluid via the gas/liquid separating section thereby to provide living organism applicable hydrogen-contained fluid, and wherein the open-close type valve is opened by a gas pressure of hydrogen gas generated in an internal of the hydrogen bubble forming implement owing to a reaction between the hydrogen generating system and the generating-purpose water thereby to exhaust hydrogen gas into the closed container as an external of the hydrogen bubble forming implement while the open-close type valve is closed after the exhaust.

摘要翻译： 一种生物体适用液体的选择性氢添加设备，包括氢气发生系统和氢气泡形成工具，所述氢气发泡器具具有包括开闭型阀的气/液分离段，其中所述氢气形成工具为 设置在容纳有生物体的适用流体的密闭容器中，并且通过气/液分离部将氢气供给到容纳有生物体的适用流体的密闭容器中，从而提供生物体适用的含氢流体，其中，开 - 关型 由于氢气发生系统和发电用水之间的反应，氢气产生装置的内部产生的氢气的气体压力使阀门打开，从而将氢气作为氢的外部排出到密闭容器中 气密成型工具，而开闭式阀门封闭 呃排气

公开(公告)号：US09120672B2

公开(公告)日：2015-09-01

申请号：US13539040

申请日：2012-06-29

申请人： Fumitake Satoh ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito

发明人： Fumitake Satoh ,  Tomoki Seo ,  Ryosuke Kurokawa ,  Bunpei Satoh ,  Tatsuya Naito

IPC分类号： C02F1/68 ,  C01B3/08 ,  B01J8/00 ,  C02F1/70

CPC分类号： C01B3/08 ,  B01J8/00 ,  C02F1/68 ,  C02F1/685 ,  C02F1/687 ,  C02F1/705 ,  Y02E60/36

摘要： Living organism applicable hydrogen-contained fluid is obtained through storing a hydrogen generating system, which contains a hydrogen generating agent as an essential component, in a hydrogen bubble forming implement which has a gas/liquid separating section including a gas-permeable film or an open-close type valve, causing the hydrogen generating system and a generating-purpose water to react in the hydrogen bubble forming implement, and supplying hydrogen gas generated in the hydrogen bubble forming implement into living organism applicable fluid via the gas/liquid separating section.

摘要翻译： 生物体适用的含氢流体是通过将含氢生成剂作为必需成分的氢气生成系统储存在具有气体/液体分离部分的气泡成形工具中获得的，所述气体/液体分离部分包括透气膜或开口 - 闭式阀，使得氢气发生系统和发电用水在氢气形成工具中反应，并且通过气/液分离段将在氢气形成工具中产生的氢气供应到生物体适用的流体中。

公开(公告)号：US09142463B2

公开(公告)日：2015-09-22

申请号：US13516102

申请日：2011-01-28

申请人： Yuichi Harada ,  Tatsuya Naito ,  Yoshiaki Toyoda

发明人： Yuichi Harada ,  Tatsuya Naito ,  Yoshiaki Toyoda

IPC分类号： H01L23/62 ,  H01L21/84 ,  H01L27/02 ,  H01L27/06 ,  H01L27/12 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

CPC分类号： H01L21/84 ,  H01L27/0255 ,  H01L27/0259 ,  H01L27/0629 ,  H01L27/0635 ,  H01L27/1203 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/861 ,  H01L2224/48463 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： By connecting a protection diode (71) wherein p-anode layers (21) and n-cathode layers (22) are alternately formed in a polysilicon layer, and p-n junctions (74) that are in a reverse blocking state when there is a forward bias are alternately short circuited with a metal film (53), to a power semiconductor element (IGBT (72)), it is possible to achieve a balance between a high breakdown capability and a smaller chip area, a rise of breakdown voltage is suppressed even when a clamping voltage is repeatedly applied, and furthermore, it is possible to prevent destruction caused by a negative surge voltage input into a gate terminal (G).

摘要翻译： 通过连接其中在多晶硅层中交替形成p阳极层（21）和n-阴极层（22）的保护二极管（71）和当存在向前的方向时处于反向阻塞状态的pn结（74） 偏置与金属膜（53）交替地短路到功率半导体元件（IGBT（72）），可以实现高击穿能力和较小芯片面积之间的平衡，抑制击穿电压的上升 即使重复施加钳位电压，此外，可以防止由输入到栅极端子（G）的负浪涌电压引起的破坏。

公开(公告)号：US08006678B2

公开(公告)日：2011-08-30

申请号：US12328462

申请日：2008-12-04

申请人： Tatsuya Naito ,  Kenichi Ishii ,  Shigemi Miyazawa ,  Ryuu Saitou

发明人： Tatsuya Naito ,  Kenichi Ishii ,  Shigemi Miyazawa ,  Ryuu Saitou

IPC分类号： F02P1/00

CPC分类号： F02P3/0552

摘要： A coil failure detection circuit detects a rise of a collector current of an IGBT and a timer circuit measures the length of a rise period. If the rise is not a normal one, an electronic control unit judges that a coil failure has occurred. The electronic control unit turns off the IGBT to prevent misfires and stops a flow of fuel gas to a combustion chamber to prevent melting or deterioration of a catalyst.

摘要翻译： 线圈故障检测电路检测IGBT的集电极电流的上升，并且定时器电路测量上升周期的长度。 如果上升不是正常的，则电子控制单元判断线圈故障已经发生。 电子控制单元关闭IGBT以防止失火，并停止向燃烧室的燃料气流，以防止催化剂熔化或劣化。

公开(公告)号：US07157785B2

公开(公告)日：2007-01-02

申请号：US10928927

申请日：2004-08-27

申请人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

发明人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

IPC分类号： H01L27/85 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11 ,  H01L31/07

CPC分类号： H02M7/003 ,  H01L29/0696 ,  H01L29/7395 ,  H01L29/872

摘要： A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region 1 that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.

摘要翻译： 公开了一种半导体器件，其减少由反向偏置电压施加引起的反向泄漏电流并且降低IGBT的导通电压。 提供了使用半导体器件的双向开关器件，并且公开了制造半导体器件的方法。 反向阻断IGBT通过将p型基极区域和发射极电极之间延伸的类型漂移区域1的部分引入肖特基接触来形成反向漏电流和导通电压，形成 肖特基路口。

公开(公告)号：US5864442A

公开(公告)日：1999-01-26

申请号：US654577

申请日：1996-05-29

申请人： Tatsuya Naito

发明人： Tatsuya Naito

IPC分类号： G11B5/008 ,  G11B5/035 ,  G11B5/09 ,  G11B15/05 ,  G11B20/10 ,  H04L1/00

CPC分类号： G11B15/05 ,  G11B20/10009 ,  G11B5/0086 ,  G11B5/09 ,  H04L1/0054 ,  H04L25/03878 ,  G11B5/035

摘要： A digital data reproducer, such as a VCR, reproduces digital data from a plurality of types of recording media. An equalizer includes a plurality of all-pass filters, for equalizing the reproduced digital data. A controller controls the equalization characteristics of the equalizer in accordance with the type of recording media, and controls the group delay characteristics of at least one of the plurality of all-pass filters. Thus, a single equalizer may be used for the plurality of types of recording media.

摘要翻译： 诸如VCR的数字数据再现器再现来自多种类型的记录介质的数字数据。 均衡器包括多个全通滤波器，用于均衡再现的数字数据。 控制器根据记录介质的类型控制均衡器的均衡特性，并且控制多个全通滤波器中的至少一个的组延迟特性。 因此，单个均衡器可以用于多种类型的记录介质。

公开(公告)号：US07572683B2

公开(公告)日：2009-08-11

申请号：US11558065

申请日：2006-11-09

申请人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

发明人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

IPC分类号： H01L21/331

CPC分类号： H02M7/003 ,  H01L29/0696 ,  H01L29/7395 ,  H01L29/872

摘要： A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region 1 that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.

摘要翻译： 公开了一种半导体器件，其减少由反向偏置电压施加引起的反向泄漏电流并且降低IGBT的导通电压。 提供了使用半导体器件的双向开关器件，并且公开了半导体器件的制造方法。 反向阻断IGBT通过将p型基极区域和发射极之间延伸的n型漂移区域1的部分引入肖特基接触来形成肖特基结，从而减小反向漏电流和导通电压。

公开(公告)号：US07307330B2

公开(公告)日：2007-12-11

申请号：US11397478

申请日：2006-04-04

申请人： Michio Nemoto ,  Manabu Takei ,  Tatsuya Naito

发明人： Michio Nemoto ,  Manabu Takei ,  Tatsuya Naito

IPC分类号： H01L23/58

CPC分类号： H01L29/0646 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/7395

摘要： A reverse blocking semiconductor device that shows no adverse effect of an isolation region on reverse recovery peak current, that has a breakdown withstanding structure exhibiting satisfactory soft recovery, that suppresses aggravation of reverse leakage current, which essentially accompanies a conventional reverse blocking IGBT, and that retains satisfactorily low on-state voltage is disclosed. The device includes a MOS gate structure formed on a n− drift layer, the MOS gate structure including a p+ base layer formed in a front surface region of the drift layer, an n+ emitter region formed in a surface region of the base layer, a gate insulation film covering a surface area of the base layer between the emitter region and the drift layer, and a gate electrode formed on the gate insulation film. An emitter electrode is in contact with both the emitter region and the base layer of the MOS gate structure. A p+ isolation region surrounds the MOS gate structure through the drift layer and extends across whole thickness of the drift layer. A p+ collector layer is formed on a rear surface of the drift layer and connects to a rear side of the isolation region. A distance W is greater than a thickness d, in which the distance W is a distance from an outermost position of a portion of the emitter electrode, the portion being in contact with the base layer, to an innermost position of the isolation region, and the thickness d is a dimension in a depth direction of the drift layer.

摘要翻译： 没有显示隔离区域对反向恢复峰值电流的不利影响的反向阻挡半导体器件，其具有显示令人满意的软恢复的击穿耐受结构，其抑制基本上伴随常规反向阻断IGBT的反向漏电流的恶化，并且 公开了令人满意的低导通电压。 该器件包括形成在n漂移层上的MOS栅极结构，该MOS栅极结构包括形成在该漂移层的前表面区域中的p +基极层，形成在该基极层的表面区域中的n +发射极区域， 覆盖发射极区域和漂移层之间的基底层的表面区域的栅极绝缘膜，以及形成在栅极绝缘膜上的栅电极。 发射极电极与MOS栅极结构的发射极区域和基极层接触。 p +隔离区域通过漂移层包围MOS栅极结构，并延伸穿过漂移层的整个厚度。 p +集电极层形成在漂移层的后表面上并连接到隔离区的后侧。 距离W大于厚度d，其中距离W是距离发射电极的一部分的最外侧位置（与基层接触的部分）到隔离区域的最内位置的距离，以及 厚度d是漂移层的深度方向的尺寸。

公开(公告)号：US20050082640A1

公开(公告)日：2005-04-21

申请号：US10928927

申请日：2004-08-27

申请人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

发明人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

IPC分类号： H01L29/06 ,  H01L29/739 ,  H01L29/872 ,  H02M7/00 ,  H01L29/417

CPC分类号： H02M7/003 ,  H01L29/0696 ,  H01L29/7395 ,  H01L29/872

摘要： A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region 1 that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.

摘要翻译： 公开了一种半导体器件，其减少由反向偏置电压施加引起的反向泄漏电流并且降低IGBT的导通电压。 提供了使用半导体器件的双向开关器件，并且公开了制造半导体器件的方法。 反向阻断IGBT通过将p型基极区域和发射极电极之间延伸的类型漂移区域1的部分引入肖特基接触来形成反向漏电流和导通电压，形成 肖特基路口。