摘要:
Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
摘要:
Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
摘要:
Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
摘要:
Techniques are disclosed herein for applying different process steps to single-level cell (SLC) blocks in a memory array than to multi-level cell (MLC) blocks such that the SLC blocks will have high endurance and the MLC blocks will have high reliability. In some aspects, different doping is used in the MLC blocks than the SLC blocks. In some aspects, different isolation is used in the MLC blocks than the SLC blocks. Techniques are disclosed that apply different read parameters depending on how many times a block has been programmed/erased. Therefore, blocks that have been cycled many times are read using different parameters than blocks that have been cycled fewer times.
摘要:
A nerve stimulating apparatus includes a plurality of stimulating units configured to respectively apply stimuli to a plurality of nerve regions branching from a particular nerve region of a living body, and a stimulation timing controller configured to set generating timings of respectively generating the stimuli at the plurality of stimulating units. The stimulation timing controller sets the generating timings of generating the stimuli at the plurality of stimulating units based on response results of the particular nerve region, the response results being obtained in response to the stimuli that are respectively generated at the plurality of stimulating units and that are respectively applied to the plurality of nerve regions, and the response results being measured by a biometric information measuring apparatus that measures biometric information.
摘要:
An exposure apparatus that exposes a substrate includes: an optical system that includes an emission surface from which an exposure light is emitted; a first surface that is disposed in at least a part of a surrounding of an optical path of the exposure light emitted from the emission surface; a second surface that is disposed in at least a part of a surrounding of the first surface and at a position lower than the first surface; a space portion into which a liquid can flow via a first aperture between the first surface and the second surface and which is opened to the atmosphere via a second aperture different from the first aperture; and a first recovery portion that recovers at least a part of the liquid flowing into the space portion. Here, the emission surface, the first surface, and the second surface are opposed to the surface of the substrate in at least a part of the exposure of the substrate, and the substrate is exposed with the exposure light from the emission surface via the liquid between the emission surface and the surface of the substrate.
摘要:
Capacitors (5a, 5b) are provided in the insulators of bushings (4a, 4b), respectively. One ends of the capacitors (5a, 5b) are connected to central conductors (3a, 3b) side, and the other ends are connected to a tank (1) side at the ground potential. When a discharge signal from the outside of the tank (1) reaches the capacitors (5a, 5b) through the central conductors (3a, 3b), the capacitors (5a, 5b) work as a filter to attenuate and prevent the signal in the frequency band of the discharge waveform from propagating to the inside of the tank (1). When an antenna (7) placed in the tank (1) receives a signal in the frequency band of the discharge waveform, a discharge detection unit (20) determines that a discharge inside the tank has been detected.
摘要:
Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string may depend on the location of the selected word line. This could be either a source side or drain side select transistor. This may prevent or reduce program disturb that could result due to DIBL. This may also prevent or reduce program disturb that could result due to GIDL. A negative bias may be applied to the gate of a source side select transistor when programming at least some of the word lines. In one embodiment, progressively lower voltages are used for the gate of the drain side select transistor when programming progressively higher word lines.
摘要:
Provided is a particle beam irradiation apparatus capable of highly reliable measurement of a dose of each beam and capable of highly sensitive measurement of a leakage dose caused by momentary beam emission. The particle beam irradiation apparatus according to the present invention includes: an emission control portion that controls emission and termination of a particle beam; a control portion that sequentially changes an irradiation position of the particle beam relative to an affected area; first and second dosimeters that measure dose rates of the particle beam directed to the affected area; and an abnormality determination portion that accumulates the dose rates output from the first and second dosimeters for each of predetermined determination periods to calculate first and second sectional dose measurement values and that performs second abnormality determination of determining that there is an abnormality and outputs an interlock signal for terminating the emission of the particle beam in at least one of a case in which the first sectional dose measurement value exceeds a predetermined first reference range and a case in which the second sectional dose measurement value exceeds a predetermined second reference range.
摘要:
Data is programmed into and read from a set of target memory cells. When reading the data, temperature compensation is provided. The temperature compensation is based on temperature information and the state of one or more neighbor memory cells. In one embodiment, when data is read from set of target memory cells, the system senses the current temperature and determines the differences in temperature between the current temperature and the temperature at the time the data was programmed. If the difference in temperature is greater than a threshold, then the process of reading the data includes providing temperature compensation based on temperature information and neighbor state information. In one alternative, the decision to provide the temperature compensation can be triggered by conditions other than a temperature differential.