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27 条记录 (耗时 0.021 秒)

    Polymer composition and resist material
    3.
    发明授权
    Polymer composition and resist material 失效
    聚合物组合物和抗蚀剂材料

    公开(公告)号：US5976759A

    公开(公告)日：1999-11-02

    申请号：US769533

    申请日：1996-12-19

    申请人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Keiji Oono

    发明人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Keiji Oono

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

    摘要： A polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group A, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.

    摘要翻译： 一种聚合物组合物，其包含（i）具有单体单元的聚合物（a），所述单体单元含有通过在酸存在下加热而变成碱溶性的官能团A.（ii）具有单体单元的聚合物（b）含有官能团 基团B也可以通过在酸的存在下加热而变得碱溶性但不如官能团A，并且如果需要，除了（i）和（ii）之外或代替（ii），（iii） ）重均分子量为300〜15,000的酚类化合物与光酸产生剂一起形成适合于形成灵敏度，分辨率，掩模线性等优异的图案的抗蚀剂材料。

    Polymer and resist material
    4.
    发明授权
    Polymer and resist material 失效
    聚合物和抗蚀材料

    公开(公告)号：US6033826A

    公开(公告)日：2000-03-07

    申请号：US769530

    申请日：1996-12-19

    申请人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Keiji Oono

    发明人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Keiji Oono

    IPC分类号： C08F212/14 ,  G03F7/004 ,  G03F7/039 ,  C08C33/04

    CPC分类号： G03F7/039 ,  C08F212/14 ,  G03F7/0045 ,  Y10S430/106

    摘要： A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.

    摘要翻译： 含有缩醛或缩酮基团的聚羟基苯乙烯衍生物的聚合物，其可以在分子中存在酸并且分子量分布非常窄的情况下容易地除去，得到适于形成分辨率，耐热性，掩模的极细图案的抗蚀剂材料 线性等特性而不引起延迟时间等的问题。

    Diazodisulfones
    5.
    发明授权
    Diazodisulfones 失效
    重氮二砜

    公开(公告)号：US5216135A

    公开(公告)日：1993-06-01

    申请号：US962089

    申请日：1992-10-16

    申请人： Fumiyoshi Urano ,  Masaaki Nakahata ,  Hirotoshi Fujie ,  Keiji Oono

    发明人： Fumiyoshi Urano ,  Masaaki Nakahata ,  Hirotoshi Fujie ,  Keiji Oono

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039

    摘要： A diazodisulfone of the formula: ##STR1## wherein R.sup.1 is a C.sub.3-8 branched or cyclic alkyl group, and R.sup.2 is a C.sub.1-8 straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.

    摘要翻译： 下式的重氮二砜：其中R 1为C 3-8支链或环状烷基，R 2为C 1-8直链，支链或环状烷基，当用于光致抗蚀剂时作为光酸产生剂是有效的 材质为300nm以下的光。

    Resist composition
    9.
    发明授权
    Resist composition 有权
    抗蚀组成

    公开(公告)号：US06656660B1

    公开(公告)日：2003-12-02

    申请号：US09492389

    申请日：2000-01-27

    申请人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Naoki Takeyama ,  Koji Ichikawa

    发明人： Fumiyoshi Urano ,  Hirotoshi Fujie ,  Naoki Takeyama ,  Koji Ichikawa

    IPC分类号： G03C700

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/106

    摘要： A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.

    摘要翻译： 抗蚀剂组合物，其包含（a）至少两种通过酸作为碱溶性的聚合物，（b）作为光酸产生剂，烷基磺酰基重氮甲烷化合物和三芳基锍芳基磺酸盐化合物或二芳基碘鎓芳基磺酸盐化合物的组合 ，和（c）作为化学增幅抗蚀剂组合物的溶剂是优异的，具有优异的图案形状和非常细的线间距，特别是当暴露于波长为300nm以下的光时。

    Sulfonium salt compounds
    10.
    发明授权
    Sulfonium salt compounds 失效
    锍盐化合物

    公开(公告)号：US06723483B1

    公开(公告)日：2004-04-20

    申请号：US09730744

    申请日：2000-12-07

    申请人： Keiji Oono ,  Kazuhito Fukasawa ,  Kazunori Sakamoto ,  Fumiyoshi Urano ,  Motoshige Sumino ,  Shigeaki Imazeki

    发明人： Keiji Oono ,  Kazuhito Fukasawa ,  Kazunori Sakamoto ,  Fumiyoshi Urano ,  Motoshige Sumino ,  Shigeaki Imazeki

    IPC分类号： G03F7004

    CPC分类号： C07C381/12 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  Y10S430/106

    摘要： A triphenyl sulfonium salt compound shown by the general formula [1] or [3]. (wherein R1 and R2 are each independently a hydrogen atom or a lower alkyl group, provided that at least one of R1 and R2 are a lower alkyl group, R3s are each independently an alkyl group, n is an integer of 0 to 3, i is an integer of 1 to 3, j is an integer of 0 to 2, provided that i+j=3, Y− is an anion derived from a sulfonic acid shown by the general formula [2] R4—SO3H  [2] [wherein R4 is an alkyl group or an aryl group which may have as a substituent an alkyl group]). (wherein X is a phenyl group which has a substituent at an ortho- and/or a meta-position, m is an integer of 1 to 3, q is an integer of 0 to 2, provided that m+q=3, p is 1 or 2 and Zp− is an anion derived from a carboxylic acid).

    摘要翻译： 由通式[1]或[3]表示的三苯基锍盐化合物（其中R 1和R 2各自独立地为氢原子或低级烷基，条件是R 1至少有一个 >和R 2为低级烷基，R 3各自独立地为烷基，n为0〜3的整数，i为1〜3的整数，j为0〜2的整数 条件是i + j = 3，Y 1是由通式[2]所示的衍生自磺酸的阴离子[其中R 4是可以具有取代基的烷基或芳基 烷基]）（其中X是在邻位和/或间位具有取代基的苯基，m为1〜3的整数，q为0〜2的整数，条件是m + q = 3，p为1或2，Z

    为衍生自羧酸的阴离子）。